• 한국식품위생안전성학회지
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• 제38권5호
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• pp.347-355
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• 2023

본 연구에서는 시가독소 생성 대장균(STEC)을 검출하기 위해 식품공전의 polymerase chain reaction (PCR)검사법과 loop-mediated isothermal amplification (LAMP)를 비교하였다. PCR 및 LAMP의 검출 한계(LOD) 및 정량화 한계(LOQ), 민감도, 특이성 및 효율성을 평가하기 위해 다양한 식품에 STEC를 접종하였다. LOD는 PCR의 경우 10⁴ CFU/mL 이하, LAMP의 경우 10³ CFU/mL 이하로 측정되었다. LOQ 값은 PCR과 LAMP 간에 차이가 없었다. 그러나 4가지 식품군에서 민감도는 양념육이 최대 11.1%, 간소고기가 최소 8.1% 차이가 났다. LAMP는 네 가지 음식 유형 모두에 대해 높은 민감도와 100% 특이도를 보였다. 따라서 LAMP는 식품 유형에 따라 검출률이 비슷하고 특이도와 민감도가 식품공전 PCR보다 우수하기 때문에 STEC에 대한 신뢰할 수 있는 분자 검출 방법이다.

• 한국전기전자재료학회논문지
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• 제21권12호
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• pp.1105-1110
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• 2008

In this study, plasma flat fluorescent lamps (FFLs) having two electrode type structures of surface discharge was fabricated by screen printing and were characterized using spectra-radiometer and square pulse power supply. Two types of FFLs (cross-type and line-type electrode structure) were compared with variation of discharge shape and electrode distance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.123-127
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• 2004

Cold cathode fluorescent lamp (CCFL) has been used as a light source for direct type backlights for LCD monitors or TV. One inverter for one CCFL was necessary for maintaining the lamp current so that many inverters were used to drive as many CCFLs of direct type backlight for LCD TV. An inverter for driving 16 CCFLs was developed to reduce the backlight cost. The length and diameter of CCFL were 450mm and 4mm, respectively. Backlight including 16 CCFLs for 26" LCD TV was assembled by using one inverter. The uniformities of the assembled backlight operated by the conventional inverter and the newly developed inverter were 75% and 88%, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1786-1788
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• 1999

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp with High Luminance for LCD Backlighting, Liquid Crystal display(LCDs) demand the use of fluorescent lamp as the backlighting source. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. In spite of its simple structure, the lamp has uniform and stable discharge over entire volume. Till now, we measured the current-voltage(V-I), Firing Voltage, Sustain Voltage for 0.5mm, 1mm electrode gap. In experiment result, long gap cell structure cause high firing voltage. The rising in firing voltage in long gap structure could not be explained by paschen's law because of non-uniform electric field.

• Design & Manufacturing
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• 제15권4호
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• pp.32-36
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• 2021

In this study, the cause of the decrease in transmittance of the outer lens among the causes of the decrease in the amount of light in the automobile headlamp was identified, and the improvement method was selected to determine the effect. The causes of defects that lower the transmittance of the outer lens are divided into a moisture problem and a haze problem. The moisture problem is caused by the temperature difference between the inside and the outside of the head lamp, and the haze problem occurs when the heat inside the head lamp evaporates the haze component contained in the plastic material and attaches it to the outer lens. In order to improve the haze problem that occurs in plastic raw materials, the structures of the bulb light source type headlamp and the LED chip light source type headlamp were analyzed. Among them, the housing material of the LED chip light source type headlamp, which is structurally prone to haze gas, was selected as the test target. In the mass-production injection process of the housing, the drying process was selected as a method to minimize haze gas without adding a separate production process. After extracting a sample every drying time at a constant drying temperature, the sample was put into a haze tester and the residual amount of haze gas was measured. As a result, it was confirmed that the residual amount of Haze gas in the material decreased as the drying time increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.223-225
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• 2005

An external electrode fluorescent lamps (EEFLs) have the advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Studies on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, an EEFL presented the possibility of using it as a light source for backlights. However, because an EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verifies the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examines the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.74-76
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• 2006

An external electrode fluorescent lamp (EEFL) has an advantage of a long lifetime in the ear1y stages of the study on plasma discharge, interest in the lamp continues. Researches on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, EEFL presented the possibility of using it as a light source for back-lights. However, because EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significant1y affected by frequency. Thus, this study verified the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examined the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.75-78
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• 2006

An external electrode fluorescent lamps (EEFLs) have the advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Studies on the operation of external electrode fluorescent lamps have focused mainlyon its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, an EEFL presented the possibility of using it as a light source for backlights. However, because an EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verifies the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examines the relationship between the change in the EEFL frequency and brightness by measuring the optical. characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• 조명전기설비학회논문지
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• 제21권7호
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• pp.68-74
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• 2007

본 논문은 카네이션의 생산성 향상을 위하여, 펄스 전원을 활용한 소형 저비용 방전관형 오존발생기를 설계 제작하였다. 펄스 전원의 출력전압, 원료 가스인 모의공기의 유량과 오존발생기의 작동 개수에 따른 방전관형 오존발생기의 방전 및 오존생성특성을 연구 검토하였다. 방전관형 오존발생기의 방전전압 및 전류는 펄스 전원의 출력전압에 비례하였다. 방전관형 오존발생기의 오존생성농도 및 오존발생량은 펄스 전원의 출력전압 및 오존발생기의 작동 개수에 비례하였다. 방전관형 오존발생기의 최대 오존생성농도 및 오존발생량으로 각각890[ppm] 및 59.7[mg/h]를 얻을 수 있었다. 방전관형 오존발생기를 카네이션 재배 하우스에 사용하였을 때, 카네이션 꽃대 길이와 굵기가 균일하여 품질 향상과 대기 토질 개선을 통한 카네이션 생산성 향상의 효과를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.