• Journal of Microbiology and Biotechnology
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• v.31 no.11
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• pp.1526-1532
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• 2021

Suaeda australis, Phragmites australis, Suaeda maritima, Suaeda glauca Bunge, and Limonium tetragonum in the Seocheon salt marsh on the west coast of the Korean Penincula were sampled in order to identify the endophytes inhabiting the roots. A total of 128 endophytic fungal isolates belonging to 31 different genera were identified using the fungal internal transcribed spacer (ITS) regions and the 5.8S ribosomal RNA gene. Fusarium, Paraconiothyrium and Alternaria were the most commonly isolated genera in the plant root samples. Various diversity indicators were used to assess the diversity of the isolated fungi. Pure cultures containing each of the 128 endophytic fungi, respectively, were tested for the plant growth-promoting abilities of the fungus on Waito-C rice germinals. The culture filtrate of the isolate Lt-1-3-3 significantly increased the growth of shoots compared to the shoots treated with the control. Lt-1-3-3 culture filtrate was analyzed and showed the presence of gibberellins (GA₁ 2.487 ng/ml, GA₃ 2.592 ng/ml, GA₉ 3.998, and GA₂₄ 6.191 ng/ml). The culture filtrate from the Lt-1-3-3 fungal isolate produced greater amounts of GA₉ and GA₂₄ than the wild-type Gibberella fujikuroi, a fungus known to produce large amounts of gibberellins. By the molecular analysis, fungal isolate Lt-1-3-3 was identified as Gibberella intermedia, with 100% similarity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.444-449
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• 2008

Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.6
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.144-151
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• 1994

We designed and fabricated a $2{\times}4$ symmetric self electro-optic effect device array using GaAs/ AIo.04 G$\DeltaR$), and optical bistability loop width ($\Delta$). The average values of the elements of the $2{\times}4$ S-SEED array were CR~13.1, R~24%, and $\Delta$~91%. It was found that the AFP cavity structure enhances the self-biased optical bistability in ESQW-SEED under no external bias. That is due to the decreased intrisic region thickness in AFP-SEED structures, and which increases the built-in electric fields. The zero-biased S-SEED showed CR of ~4.7, R~9%, and $\Delta$~22%.X>~22%.

• Korean Journal of Dental Materials
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• v.44 no.2
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• pp.151-161
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• 2017

The purpose of this study was to examine the effect of shade and thickness of resin-nanoceramic CAD-CAM block (RNB) on the microhardness of dual-cured resin cement, as well as to measure the number of photons transmitted through RNBs of different thicknesses and colors. One dual-cured resin cement was used to prepare resin cement specimens. Resin cement specimens were light-cured for 40 seconds through 3 shades (A1, A2, A3 in HT (high translucency) and LT (low translucency) respectively) and four thicknesses (1, 2, 3, 4 mm) of RNB specimens. Vickers microhardness measurements of resin cement specimens were performed using a Vickers hardness tester. The light transmission of RNB specimens was measured using a spectrometer (SpectroPro-500, Acton Research, Acton, MA, U.S.A.), and the translucency parameter was calculated using the CIEL*a*b* system. Data were statistically analyzed by ANOVA and Tukey's test. There was a significant decrease of microhardness of resin cement specimen with an overlay of 4 mm of RNB thickness and A3 shade in comparison to A1 and 1 mm, respectively (p<0.05). The translucency parameter values and light transmission of RNBs tested differed significantly, according to the thicknesses of the specimen (p<0.05). Light transmission is decreased with increase in the thicknesses of RNBs. Shade A1 transmitted more light than darker blocks. A decrease in microhardness of resin cement specimens was observed with increasing thickness and shade (A1 to A3) of RNBs.

• The korean journal of orthodontics
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• v.20 no.2
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• pp.293-304
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• 1990

The purpose of this study was to describe the morphologic differences between long-face adults and normal-face adults on the lateral and P-A cephalograms. Long-face and normal-face subifects were selected clinically, and then each of them was taken the lateral cephalogram. According to SN-MP angle and ATFH on the lateral cephalogram, long-face group and normal-face group were classified. 2 long-face adults and 18 normal-face adults were collected, and each of them was taken the P-A cephalogram. The results were as follows: 1. The morphologic differences between long-face adults and normal-face adults were closely related to mandibular morphology. 2. Long-face adults, compared with normal-face adults, demonstrated significant increase in ALFH, and significant decrease in ramus height. 3. Long-face adults, compared with normal-face adults, demonstrated significant increase in AUDH and, ALDH, especially in ALDH. 4. On the P-A cephalogram, no measures of transverse dimension demonstrated significant differences between two groups. 5. On the P-A cephalogram, facial height/facial width ratio was significantly larger than normal in the long-face adults, and in the normal-face adults, facial height/facial width ratio was approximately 90%. 6. In the correlation analysis of SN-MP angle and ATFH with all the other variables, the correlation coefficients of SN-MP angle and PTFH/ATFH that of ATFH and ALFH on the lateral cephalogram demonstrated the highest value, and on the P-A cephalogram, SN-MP angle and Cg-GA-Me (Lt.), ATFH and lower facial height demonstrated the highest value of correlation coefficients.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.47 no.3
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• pp.177-186
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• 2019

Wind power tower has been used to augment the performance of VAWT (Vertical Axis Wind Turbine). However, inappropriately designed wind power tower could reduce the performance of VAWT. Hence, an optimization study was conducted on a wind power tower. Six design variables were selected, such as the outer radius and the inner radius of the guide wall, the adoption of the splitter, the inner radius of the splitter, the number of the guide wall and the circumferential angle. For the objective function, the periodic averaged torque obtained at the VAWT was selected. In the optimization, Design of Experiment (DOE), Genetic Algorithm (GA), and Artificial Neural Network (ANN) have been applied in order to avoid a localized optimized result. The ANN has been continuously improved after finishing the optimization process at each generation. The performance of the VAWT was improved more than twice when it operated within the optimized wind power tower compared to that obtained at a standalone.