• Title/Summary/Keyword: LO leakage

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Balanced Mixer Based on Composite Right/Left-Handed Transmission Line Leaky-Wave Antenna (CRLH 전송 선로 리키 웨이브 안테나를 이용한 평형 믹서)

  • Kim, Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.9
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    • pp.985-991
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    • 2008
  • This paper presents a novel balanced mixer receiver front-end design based on a metamaterial structure applicable to differential-/common-mode excitation. This metamaterial structure functions as a leaky-wave antenna and provides in-trinsic common-mode suppression. Low LO leakage and high RF to LO isolation are achieved without additional filters for LO and RF paths. The metamaterial is based on a unit-cell which under a differential-mode excitation behaves like a composite right/left-handed(CRLH) metamaterial. In contrast, the metamaterial unit-cell is below cut-off under a common-mode excitation. Experimental results are used to verify the proposed metamaterial's differential-/common-mode characteristics. The metamaterial is integrated with a balanced mixer design resulting in an operation frequency range of $1.96{\sim}2.40$ GHz with an optimum mixer conversion loss of 21.1 dB at 2,4 GHz.

Phase Conjugator for Retrodirective Array Antenna Applications (능동 역지향성 배열 안테나용 공액 위상변위기)

  • Chun Joong-Chang;Jeung Deuk-Soo;Lee Byung-Rho;Tack Han-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.2 s.93
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    • pp.134-138
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    • 2005
  • In this paper, we have developed a new type of the microwave phase conjugator for the active retrodirective antenna array. The circuit topology is consisted of a 2-port structure to avoid the complexity of LO and RF signal combination and matching, using the cascade connection of two single-ended mixers. The operating frequencies are 4.0 GHz, 2.01 GHz and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -7 dB and 1-dB compression point 15 dBm with the LO power of 9 dBm. For the most important parameter, the isolation between RE leakage and IF signal is as high as 25 dB.

A Design on LNA/Down-Mixer for MB-OFDM m Using 0.18 μm CMOS (CMOS를 이용한 MB-OFDM UWB용 LNA/Down-Mixer 설계)

  • Park Bong-Hyuk;Lee Seung-Sik;Kim Jae-Young;Choi Sang-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.2 s.93
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    • pp.139-143
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    • 2005
  • In this paper, we propose the design on LNA and Down-mixer for MB-OFDM UWB using $0.18\;{\mu}m$ CMOS. LNA, Down-mixer design result shows that it covers the frequency range ken 3 GHz to 5 GHz. The LNA gain is larger than 12.8 dB, and noise figure about 2.6 dB. Double balanced differential down-mixer is designed less than 2 dB gainflatness, and it has over 30 dB LO leakage, feedthrough characteristics.

Miniaturized DBS Downconverter MMIC Showing a Low Noise and Low Power Dissipation Characteristic (저잡음ㆍ저소비전력 특성을 가지는 위성방송 수신용 초소형 다운컨버터 MMIC)

  • Yun, Young
    • Journal of Navigation and Port Research
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    • v.27 no.4
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    • pp.443-447
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    • 2003
  • In this work. using 0.2 GaAs modulation doped FET(MODFET), a high performance DBS downconverter MMIC was developed for direct broadcasting satellite (DBS) application. Without LNA, the downconverter MMIC showed a very low noise of 4.8 dB, which is lower by 3 dB than conventional ones. A low LO power of -10 dBm was required for the normal DBS operation of the downconverter MMIC. which reduced the power consumption via a removal of LO amplifier on MMIC. It required only a low power consumption of 175 mW, which is lower than 70 percent of conventional ones. The LO leakage power at IF output was suppressed to a lower level than 30 dBm, which removes a bulky LO rejection filter on a board. The fabricated chip, which include a mixer, If amplifiers. LO rejection filter, and active balun, exhibited a small size of $0.84{\times}0.9\textrm{mm}^2$.

HEMT Mixer for Phase Conjugator Applications in the LS Band (공액 위상변위기용 LS 밴드 HEMT 혼합기)

  • 전중창
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.2
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    • pp.239-244
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    • 2004
  • In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the LS band retrodirective antenna system. The mixer as a phase conjugator must have an If signal of which frequency is nearly as high as that of an RF signal, so this fact brings difficulty in the combination of input signals and the design of impedance matching circuit. The circuit configuration is chosen to be of the gate mixer using a pseudomorphic HEMT device. The operating frequencies are 4.00 ㎓, 2.01 ㎓, and 1.99 ㎓ for LO, RF, and IF, respectively. Conversion gain is measured to be 12.5 ㏈ and 1 ㏈ compression point -34 ㏈m at the LO power of -7 ㏈m. The mixer fabricated in this research is the single-ended type, where RF leakage signal appears inevitably at the If port because RF and If frequencies are almost the same. The circuit topology suggested here can be applied directly to the design of balanced-type mixers and phase conjugators.

A Highly Integrated HBT Downconverter MMIC for Application to One-chip RF tranceiver solution (One-chip 고주파 단말기에의 응용을 위한 고집적 HBT 다운컨버터 MMIC)

  • Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.31 no.6
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    • pp.777-783
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    • 2007
  • In this work, a highly integrated downconverter MMIC employing HBT(heterojunction bipolar transistor) was developed for application to one chip tranceiver solution of Ku-band commercial wireless communication system. The downconverter MMIC (monolithic microwave integrated circuit) includes mixer filter. amplifier and input/output matching circuit. Especially, spiral inductor structures employing SiN film were used for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC.

Design and Fabrication of Direct Conversion RF Module using Even Harmonic Mixer for 2-4GHz ISM band (Even Harmonic Mixer를 이용한 2.4GHz ISM band용 Direct Conversion방식의 RF Module 설계 및 제작)

  • 이주갑;윤영섭;최현철
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.222-226
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    • 2001
  • In this paper, 2.4GHz RF Module using Even Harmonic Mixer(EHM) was designed and fabricated for Direct conversion(DC) system. By minimizing performance degradation of DC system with DC offset and LO radiation, the capability of minimization and one chip solution in wireless system was proposed. The designed EHM using anti-parallel diode pair represented 9dB conversion loss and about -60dBm 2LO leakage radiation in RF port, and output reflection and reverse transmission characteristic of low noise amplifier was improved. So superior DC offset suppression characteristic is expected. RF Module which consists of EHM, LNA, RF amplifier, Frequency synthesizer and Duplexer was designed and fabricated.

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Surface Degradation of Silicone Rubber Insulator by Salt-fog Test (Salt-fog 분무에 따른 실리콘 고무 애자의 표면열화)

  • 장동욱;박영국;강성화;이용희;임기조
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.509-512
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    • 1999
  • The main problem in porcelain as a high voltage insulator is that the water film is felled on the insulator surface due to rain, flog, and dew. In the presence of contamination. leakage current increases which may lead to flashover that could be followed by an outage of the power system. These days, high voltage polymer outdoer insulators have been studied and widely used, because they have excellent electrical and mechanical properties, superior performance of flashover for contamination. light weight, easy installation or handling. no maintenance during service, competitive price, and so on. First of a1l the excellent performance of the silicone rubber in polluted and wet conditions is attributed to the ability of the material to maintain the hydrophobicity of the surface in the presence of severe contaminants and wet conditions. This is due to a low surface energy of the silicone rubber. But the leakage current and some surface discharge occurs on the surface of insulator when the insulator is used for a long time. So the leakage current and the surface discharge current are important lo estimate the condition of the silicone rubber surface. In this paper, the average leakage current the surface discharge current the surface rubber surface with the salt fog condition for the first stage.

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A 2.4-GHz Low-Power Direct-Conversion Transmitter Based on Current-Mode Operation (전류 모드 동작에 기반한 2.4GHz 저전력 직접 변환 송신기)

  • Choi, Joon-Woo;Lee, Hyung-Su;Choi, Chi-Hoon;Park, Sung-Kyung;Nam, Il-Ku
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.12
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    • pp.91-96
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    • 2011
  • In this paper, a low-power direct-conversion transmitter based on current-mode operation, which satisfies the IEEE 802.15.4 standard, is proposed and implemented in a $0.13{\mu}m$ CMOS technology. The proposed transmitter consists of DACs, LPFs, variable gain I/Q up-conversion mixer, a divide-by-two circuit with LO buffer, and a drive amplifier. By combining DAC, LPF, and variable gain I/Q up-conversion mixer with a simple current mirror configuration, the transmitter's power consumption is reduced and its linearity is improved. The drive amplifier is a cascode amplifier with gain controls and the 2.4GHz I/Q differential LO signals are generated by a divide-by-two current-mode-logic (CML) circuit with an external 4.8GHz input signal. The implemented transmitter has 30dB of gain control range, 0dBm of maximum transmit output power, 33dBc of local oscillator leakage, and 40dBc of the transmit third harmonic component. The transmitter dissipates 10.2mW from a 1.2V supply and the die area of the transmitter is $1.76mm{\times}1.26mm$.

Dielectric properties of Pr$_2$O$_3$ high-k films grown by metalorganic chemical vapor deposition on silicon

  • Nigro, Raffaella-Lo;Vito Raineri;Corrado Bongiomo
    • Electrical & Electronic Materials
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    • v.16 no.9
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    • pp.65.2-65
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    • 2003
  • Praseodymium oxid ($Pr_2$$O_3$) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The $Pr_2$$O_3$ films have shown a dielectric constant = 23-25 and a leakage current density of $8.8{\times}10$-e $A/\textrm{mm}^2$ at +1 V.

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