• Title/Summary/Keyword: LNA Mixer

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A 2.3-2.7 GHz Dual-Mode RF Receiver for WLAN and Mobile WiMAX Applications in $0.13{\mu}m$ CMOS (WLAN 및 Mobile WiMAX를 위한 2.3-2.7 GHz 대역 이중모드 CMOS RF 수신기)

  • Lee, Seong-Ku;Kim, Jong-Sik;Kim, Young-Cho;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.3
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    • pp.51-57
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    • 2010
  • A dual-mode direct conversion receiver is developed in $0.13\;{\mu}m$ RF CMOS process for IEEE 802.11n based wireless LAN and IEEE 802.16e based mobile WiMAX application. The RF receiver covers the frequency band between 2.3 and 2.7 GHz. Three-step gain control is realized in LNA by using current steering technique. Current bleeding technique is applied to the down-conversion mixer in order to lower the flicker noise. A frequency divide-by-2 circuit is included in the receiver for LO I/Q differential signal generation. The receiver consumes 56 mA at 1.4 V supply voltage including all LO buffers. Measured results show a power gain of 32 dB, a noise figure of 4.8 dB, a output $P_{1dB}$ of +6 dBm over the entire band.

Design and Fabrication of K-band multi-channel receiver for short-range RADAR (근거리 레이더용 K대역 다채널 전단 수신기 설계 및 제작)

  • Kim, Sang-Il;Lee, Seung-Jun;Lee, Jung-Soo;Lee, Bok-Hyung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.7A
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    • pp.545-551
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    • 2012
  • In this paper, K-band multi-channel receiver was designed and fabricated for low noise amplification and down conversion to L-band. The fabricated multi-channel receiver incorporates GaAs-HEMT LNA(Low noise amplifier) which provides less than a 2 dB noise figure, IR(Image Rejection) Filter for rejection of image frequency, IR(Image rejection) mixer to reject a image frequency and improve an IMD(Intermodulation Distortion) characteristic. Test results of the fabricated multi-channel receiver show less than a 3.8 dB noise figure, conversion gain of more than 27dB, and IP1dB(Input 1dB Gain Compression Point) of -9.5 dB and over.

Large Signal Unified Model for GaAs pHEMT using Modified Curtice Model (새롭게 수정된 Curtice 모델을 이용한 GaAs pHEMT 대신호 통합모델 구축)

  • 박덕종;염경환;장동필;이재현
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.4
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    • pp.551-561
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    • 2001
  • In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

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Miniaturized DBS Downconverter MMIC Showing a Low Noise and Low Power Dissipation Characteristic (저잡음ㆍ저소비전력 특성을 가지는 위성방송 수신용 초소형 다운컨버터 MMIC)

  • Yun, Young
    • Journal of Navigation and Port Research
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    • v.27 no.4
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    • pp.443-447
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    • 2003
  • In this work. using 0.2 GaAs modulation doped FET(MODFET), a high performance DBS downconverter MMIC was developed for direct broadcasting satellite (DBS) application. Without LNA, the downconverter MMIC showed a very low noise of 4.8 dB, which is lower by 3 dB than conventional ones. A low LO power of -10 dBm was required for the normal DBS operation of the downconverter MMIC. which reduced the power consumption via a removal of LO amplifier on MMIC. It required only a low power consumption of 175 mW, which is lower than 70 percent of conventional ones. The LO leakage power at IF output was suppressed to a lower level than 30 dBm, which removes a bulky LO rejection filter on a board. The fabricated chip, which include a mixer, If amplifiers. LO rejection filter, and active balun, exhibited a small size of $0.84{\times}0.9\textrm{mm}^2$.