• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.35-40
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• 2008

High performance light emitting diodes(LEDs) have been developed using GaN-based materials grown on sapphire substrates in recent years. Although these LEDs are already commercially available, we have to consider electrostatic discharge(ESD) damage related to both basic materials of diode and miniaturization of LEDs. ESD damage is one of the important parameters influencing reliability of the light emitting devices. We investigated mass production of GaN-based LEDs suffered from ESD during production process and present the solutions in order to improve the ESD problem. Most of EDS problems were controlled by using instruments properly and improvement of the process circumstances as well.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.177-182
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• 2013

Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

• Proceedings of the Plant Resources Society of Korea Conference
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• 2018.04a
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• pp.66-66
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• 2018

Light fermentation has been conducted under different light conditions such as normal dark light, white light, and light emitting diodes (LEDs) various color (blue, green, red, white on blueberry powder with fermenting bacteria Bacillus subtilis (B2). The bacteria B2 was isolated and identified by 16S rRNA sequencing method. RYRP biologically converted to secondary metabolites through light fermentation in the presence of Bacillus subtilis, the bacteria actively involved in bioconversion process. LEDs fermentation to enhance the production of phenolic content while comparing to normal dark and white light. Among the different color LEDs, blue LEDs mediated fermentation showed higher amount of total phenolic and flavonoid content. Then blue LEDs mediated fermented compound were characterized by FTIR and GC-MS, subsequently the compound was analyzed antioxidant activity tests and the antioxidant activity exhibited higher. This is the first study to demonstrate that B. subtilis-LEDs mediated fermentation is useful for facilitating phenolic compound production and enhancing antioxidant activity, which may have greater application fermentation fields.

• Journal of Power Electronics
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• v.12 no.6
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• pp.869-877
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• 2012

This paper presents a current-balancing circuit for security lights that uses parallel-connected LEDs. The parallel connection of LEDs causes current differences between the LED strings because of characteristic deviations. These differences can reduce the lifespan of a particular point of LEDs by thermal spotting. They can also cause non-uniform luminance of the lighting device. Among the different methods for solving these problems, the method using current-balancing transformers makes it easy to compensate for current differences and it has a simple circuitry. However, while the balancing transformer has been applied to AC light sources, LEDs operate on a DC source, so the driving circuitry and the design method have to be changed and their performances must be verified. Thus in this paper, a design method of the balancing transformer network and the driving circuitry for LEDs is proposed. The proposed design method could have a smaller size than the conventional design method. The proposed circuitry is applied to three types of 100-watt LED security lights, which use different LEDs. Experimental results are presented to verify the performance of the designed driving circuits.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• Korean Journal of Materials Research
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• v.32 no.11
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• pp.449-457
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• 2022

Halide perovskites are emerging materials for next-generation display applications, thanks to their narrow emission linewidth and band gap tunability, capable of covering the entire range of visible light. Despite their short period of research, perovskite light emitting diodes (PeLEDs) have shown rapid progress in device external quantum efficiency (EQE) in the near-infrared (NIR), red, and green emission wavelengths, and the record EQE has exceeded over 20 %. However there has been limited progress with blue emission compared to the red and green counterparts. In this review, the current status and challenges of blue PeLEDs are introduced, and strategies to produce spectrally stable blue PeLEDs are discussed. The strategies include 1) a mixed halide system in the form of 3-dimensional (3D) perovskites, 2) colloidal perovskite nanocrystals and 3) low dimensional perovskites, known as quasi-2D perovskites. In the mixed halide system, previous reports based on the compositional engineering of 3D perovskites to reduce spectral instability (i.e., halide segregation) will be discussed. Since spectral instability issue originate from the mixed halide composition in perovskites, the two other strategies are based on enlarging the band gap with a single halide composition. Finally, the prospects for each strategy are discussed, for further improvement in spectrally stable blue PeLEDs.

• Journal of Mushroom
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• v.13 no.2
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• pp.125-128
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• 2015

We found about cultivation light environment conditions of Neolentinus lepideus. For the high quality of N. lepideus, lights-out was useful. In the lights-out, the diameter of pileus of N. lepideus was smaller, and the length and the thickness of stipes were longer and larger than in that of lighting. At the LED effect, the orange and red LEDs prolonged the cultivation period in N. lepideus. The yields of N. lepideus under the white, blue and green LEDs were higher, and the number of available stipes of N. lepideus under the white and blue LEDs was higher than that of other LEDs. The diameter of pileus of N. lepideus under the white, blue and green LEDs was higher, and the length and the thickness of stipes under the orange and red LEDs was higher than those of other LEDs.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.636-641
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• 2012

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.