• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2523-2528
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• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.441-448
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• 2002

The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2022년도 추계학술대회
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• pp.124-124
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• 2022

Wheat (Triticum aestivum L.) is the major staple foods and is in increasing demand in the world. The elevated temperature due to changes in climate and environmental conditions is a major factor affecting wheat development and grain quality. The optimal temperature range for winter wheat is between 15~25℃, it is necessary to study the physiological characteristic of wheat according to the elevated temperature. This study presents the effect of elevated temperature on the yield and quality of two Korean bread wheat (Baekkang and Jokyoung) in a temperature gradient tunnel (TGT). Two bread wheat cultivars were grown in TGT at four different temperature conditions, i.e. TO control (near ambient temperature), T1 control+1℃, T2 control+2℃, T3 control+3℃. The period from sowing to heading stage has accelerated, while the growth properties including culm length, spike length and number of spike, have not changed by elevated temperature. On the contrary, the number of grains per spike and grain yield was reduced under T3 condition compared with that of control condition. In addition, the. The grain filling rate and grain maturity also accelerated by elevated temperature (T3). The elevating temperature has led to increasing protein and gluten contents, whereas causing reduction of total starch contents. These results are consistent with reduced expression of starch synthesis genes and increased gliadin synthesis or gluten metabolism genes during late grain filling period. Taken together, our results suggest that the elevated temperature (T3) leads to reduction in grain yield regulating number of grains/spike, whereas increasing the gluten content by regulating the expression of starch and gliadin-related genes or gluten metabolism process genes expression. Our results should be provide a useful physiological information for the heat stress response of wheat.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• 상하수도학회지
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• 제30권5호
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• pp.545-551
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• 2016

This study compares characteristic of membrane fouling in MBR-RO systems. In lab. scale MBRs test, MBRs were operated at different Flux(10, 20, 30 & 40 LMH) and temperature(10, 15, 20, 25 & $30^{\circ}C$). The results show that MBR permeate was measured lower amounts of organic substances in Higher flux and lower temperature and led to lower RO fouling rates. The main cause was that due to cake fouling formed on membrane surfaces in MBRs. Under both cases, Cake layer of membrane surfaces formed in MBRs removed RO fouling factors, polysaccharide and protein, because of cake layer attached on membrane surfaces greater amounts of organic substances. This study implies that optimization of MBR with operating conditions is a crucial strategy to RO membrane fouling control.

• Nuclear Engineering and Technology
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• 제54권8호
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• pp.2989-2998
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• 2022

Line contact structures, such as the contact between graphite brick and graphite tenon, widely exist in high-temperature gas-cooled reactors. Due to the stress concentration effect, the line contact area is one of the dangerous positions prone to failure in the nuclear reactor core. In this paper, the failure mechanism of line contact structures composed of IG11 nuclear graphite column and brick were investigated by means of experiment and finite element simulation. It was found that the failure process mainly includes three stages: firstly, the damage accumulation in nuclear graphite material led to the characteristic yielding of the line contact structure, but no macroscopic failure can be observed at this stage; secondly, the stresses near the contact area met Mohr failure criterion, and a crack initiated and propagated laterally in the contact zone, that is, local macroscopic failure occurred at this stage; finally, a second crack initiated in the contact area and developed in to a Y-shape, resulting in the final failure of the structure. This study lays a foundation for the structural design and safety assessment of high-temperature gas-cooled reactors.

• 대한화학회지
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• 제48권4호
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• pp.371-378
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• 2004

기존의 $SrGa_2S_4:Eu^{2+}$ 녹색 발광 형광체는 주로 CRT (Cathode Ray Tube)용이나 FED (Field Emission Display), 그리고 EL (Electroluminescence)용 발광소자로 많이 연구되어졌다. 현재는 장파장 영역의 여기 특성을 이용한 LED (Light Emitting Diode)용 형광체로 주목 되어지고 있다. $SrGa_2S_4:Eu^{2+}$ 형광체의 일반적 합성 방법은 Flux를 이용하여 인체에 유해한 $H_2S$나 $CS_2$ 기체를 사용할 뿐만 아니라 높은 합성온도, 긴 반응시간 및 공정이 복잡한 단점을 지니고 있다. 따라서 본 실험은 황화물계 원료인 SrS, $Ga_2S_3$ 그리고 EuS를 출발 물질로 하여 $H_2S$ 기체를 사용하지 않고 혼합 기체$(5% H_2/95% N_2)$를 사용해 환원 분위기 하에서 $SrGa_2S_4:Eu^{2+}$을 합성하였다. 그리고 다양한 합성 조건과 LED용으로 사용되기 위해 수세처리와 Sieving 과정을 거친 형광체의 발광특성을 검토하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• 인터넷정보학회논문지
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• 제24권2호
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• pp.19-26
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• 2023

인간은 자연 빛에 적응하고 진화해왔으나 현재는 실내 생활의 비중이 높아짐에 따라 생체리듬 교란의 문제가 유발되었다. 이의 해결을 위해 일출~일몰간 다채롭게 변화하는 자연광의 색온도를 재현하는 조명이 연구되고 있다. 자연광 색온도의 재현을 위해서는 색온도가 다른 다수의 LED 광원을 사용하여 조명을 제작한 후 수백에서 수천 단계의 광원별 인가전류의 조합에 대한 광특성을 측정 및 수집하여 제어지표 DB를 구성하고 광특성 매칭 방법을 통해 조명을 제어하였다. 이러한 제어 방법은 인가전류의 조합 단계를 세밀하게 할수록 많은 시간 및 경제적 비용이 발생한다는 문제가 있다. 이에 본 논문에서는 LED 광원별 최소 분광분포로 보간 및 조합 연산을 수행하여 자연광 색온도를 재현하는 방법을 제안한다. 먼저 색온도가 다른 광원 채널로 구성되고 각 채널별 256단계의 인가전류 제어 기능을 구현한 LED 조명을 대상으로 채널별 5개의 최소 분광분포(Spectral Power Distribution, SPD)를 실측·수집한다. 이후 수집한 SPD를 대상으로 각 채널별 256단계의 SPD를 생성하는 보간 연산을 수행하고, 채널별 SPD의 조합 연산을 통해 LED 조명의 모든 제어 조합에 대한 SPD를 생성한다. 생성된 SPD를 통해 조도와 색온도를 산출하여 제어지표 DB를 구축한 후 매칭 기법을 통해 자연광의 색온도를 재현한다. 성능 평가에서는 실내 권장 조도 기준을 충족하면서도 평균 오차율 0.18%의 범위 내에서 자연광의 시간별 색온도를 제공하였다.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2003년도 추계학술대회 논문집(II)
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• pp.385-390
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• 2003

Recently, use of Continuous Welded rail(CWR) is increased for structural, economical reason but new problem is caused accordingly and phenomenon that give threat in traveling by ship stability of train is led. According as rail is prolonged, excessive relative displacement and longitudinal force can happen to rail by temperature change and external force. Specially, buckling or fracture of rail can happen in railroad bridges because relative displacement by bridge and properties of matter difference between rail grows and additional axial force happens to rail by behavior of bridge. According to several study, longitudinal force of rail in bridge is influenced with ballast resistance, elongation length, boundary condition, stiffness of framework. Non-linear behavior of ballast acts by the most important factor in interaction between rail and bridge. Therefore, must consider stiffness of bridge construction with non-linear characteristic of ballast and stiffness of base for accuracy with longitudinal force calculation and analyze. In this study, perform material non-linear analysis for longitudinal force of CWR and three dimensional buckling analysis to decide buckling force.