• Title/Summary/Keyword: LED temperature characteristic

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Highly Luminescent (Zn0.6Sr0.3Mg0.1)2Ga2S5:Eu2+ Green Phosphors for a White Light-Emitting Diode

  • Jeong, Yong-Kwang;Cho, Dong-Hee;Kim, Kwang-Bok;Kang, Jun-Gill
    • Bulletin of the Korean Chemical Society
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    • v.33 no.8
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    • pp.2523-2528
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    • 2012
  • Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

The Influence of the Mg-doped p-GaN Layer Activated in the O2 Ambient on the Current-Voltage Characteristics of the GaN-Based Green LEDs (O2 분위기에서 p-GaN 층의 Mg 활성화가 GaN계 녹색 발광소자에 미치는 전류-전압특성)

  • 윤창주;배성준
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.441-448
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    • 2002
  • The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

Growth and Quality Characteristics in Response to Elevated Temperature during the Growing Season of Korean Bread Wheat

  • Chuloh Cho;Han-Yong Jeong;Yulim Kim;Jinhee Park;Chon-Sik Kang;Jong-Min Ko;Ji-Young Shon
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2022.10a
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    • pp.124-124
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    • 2022
  • Wheat (Triticum aestivum L.) is the major staple foods and is in increasing demand in the world. The elevated temperature due to changes in climate and environmental conditions is a major factor affecting wheat development and grain quality. The optimal temperature range for winter wheat is between 15~25℃, it is necessary to study the physiological characteristic of wheat according to the elevated temperature. This study presents the effect of elevated temperature on the yield and quality of two Korean bread wheat (Baekkang and Jokyoung) in a temperature gradient tunnel (TGT). Two bread wheat cultivars were grown in TGT at four different temperature conditions, i.e. TO control (near ambient temperature), T1 control+1℃, T2 control+2℃, T3 control+3℃. The period from sowing to heading stage has accelerated, while the growth properties including culm length, spike length and number of spike, have not changed by elevated temperature. On the contrary, the number of grains per spike and grain yield was reduced under T3 condition compared with that of control condition. In addition, the. The grain filling rate and grain maturity also accelerated by elevated temperature (T3). The elevating temperature has led to increasing protein and gluten contents, whereas causing reduction of total starch contents. These results are consistent with reduced expression of starch synthesis genes and increased gliadin synthesis or gluten metabolism genes during late grain filling period. Taken together, our results suggest that the elevated temperature (T3) leads to reduction in grain yield regulating number of grains/spike, whereas increasing the gluten content by regulating the expression of starch and gliadin-related genes or gluten metabolism process genes expression. Our results should be provide a useful physiological information for the heat stress response of wheat.

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Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure

  • Yousif, Afnan K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.3
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    • pp.239-243
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    • 2008
  • In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

Evaluation of membrane fouling by MBR operation conditions in MBR-RO (MBR-RO 공정에서 MBR 운전조건에 따른 막오염 특성 및 RO 공정 막오염 평가)

  • Park, Kitae;Park, Jungwoo;Park, Junghoon;Kang, Heeseok;Kim, Jihoon;Kim, Hyungsoo
    • Journal of Korean Society of Water and Wastewater
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    • v.30 no.5
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    • pp.545-551
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    • 2016
  • This study compares characteristic of membrane fouling in MBR-RO systems. In lab. scale MBRs test, MBRs were operated at different Flux(10, 20, 30 & 40 LMH) and temperature(10, 15, 20, 25 & $30^{\circ}C$). The results show that MBR permeate was measured lower amounts of organic substances in Higher flux and lower temperature and led to lower RO fouling rates. The main cause was that due to cake fouling formed on membrane surfaces in MBRs. Under both cases, Cake layer of membrane surfaces formed in MBRs removed RO fouling factors, polysaccharide and protein, because of cake layer attached on membrane surfaces greater amounts of organic substances. This study implies that optimization of MBR with operating conditions is a crucial strategy to RO membrane fouling control.

Study on failure mechanism of line contact structures of nuclear graphite

  • Jia, Shigang;Yi, Yanan;Wang, Lu;Liu, Guangyan;Ma, Qinwei;Sun, Libin;Shi, Li;Ma, Shaopeng
    • Nuclear Engineering and Technology
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    • v.54 no.8
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    • pp.2989-2998
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    • 2022
  • Line contact structures, such as the contact between graphite brick and graphite tenon, widely exist in high-temperature gas-cooled reactors. Due to the stress concentration effect, the line contact area is one of the dangerous positions prone to failure in the nuclear reactor core. In this paper, the failure mechanism of line contact structures composed of IG11 nuclear graphite column and brick were investigated by means of experiment and finite element simulation. It was found that the failure process mainly includes three stages: firstly, the damage accumulation in nuclear graphite material led to the characteristic yielding of the line contact structure, but no macroscopic failure can be observed at this stage; secondly, the stresses near the contact area met Mohr failure criterion, and a crack initiated and propagated laterally in the contact zone, that is, local macroscopic failure occurred at this stage; finally, a second crack initiated in the contact area and developed in to a Y-shape, resulting in the final failure of the structure. This study lays a foundation for the structural design and safety assessment of high-temperature gas-cooled reactors.

Synthesis and Luminescence Characteristics of SrGa2S4:Eu Green Phosphor for Light Emitting Diodes by Solid-State Method (고상법을 이용한 LED용 SrGa2S4:Eu 녹색 형광체의 합성 및 발광특성)

  • Kim, Jae-Myung;Kim, Kyung-Nam;Park, Joung-Kyu;Kim, Chang-Hae;Jang, Ho-Gyeom
    • Journal of the Korean Chemical Society
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    • v.48 no.4
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    • pp.371-378
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    • 2004
  • The $SrGa_2S_4:Eu^{2+}$ green emitting phosphor has been studied as a luminous device for CRT (Cathode Ray Tube) or FED (Field Emission Display) and EL (Electroluminescence). This phosphor, also, is under noticed for LED (Lighting Emitting Diode) phosphor, which makes use of excitation characteristics of long wavelength region. The $SrGa_2S_4:Eu^{2+}$ phosphor was prepared generally conventional synthesis method using flux. However, this method needs high heat-treated temperature, long reaction time, complex process and harmful $H_2S$or $CS_2$ gas. In this works, therefore, we have synthesized $SrGa_2S_4:Eu^{2+}$ using SrS, $Ga_2S_3$, and EuS as starting materials, and the mixture gas of 5% H2/95% N2 was used to avoid the $H_2S$or $CS_2$. We investigated the luminescence characteristic of $SrGa_2S_4:Eu^{2+}$ phosphor prepared in various synthesis conditions, performed post-treatment and sieving process for application to LED.

Effects of Simultaneous Bending and Heating on Characteristics of Flexible Organic Thin Film Transistors

  • Cho, S.W.;Kim, D.I.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.470-470
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    • 2013
  • Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

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A Method of Reproducing the CCT of Natural Light using the Minimum Spectral Power Distribution for each Light Source of LED Lighting (LED 조명의 광원별 최소 분광분포를 사용하여 자연광 색온도를 재현하는 방법)

  • Yang-Soo Kim;Seung-Taek Oh;Jae-Hyun Lim
    • Journal of Internet Computing and Services
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    • v.24 no.2
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    • pp.19-26
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    • 2023
  • Humans have adapted and evolved to natural light. However, as humans stay in indoor longer in modern times, the problem of biorhythm disturbance has been induced. To solve this problem, research is being conducted on lighting that reproduces the correlated color temperature(CCT) of natural light that varies from sunrise to sunset. In order to reproduce the CCT of natural light, multiple LED light sources with different CCTs are used to produce lighting, and then a control index DB is constructed by measuring and collecting the light characteristics of the combination of input currents for each light source in hundreds to thousands of steps, and then using it to control the lighting through the light characteristic matching method. The problem with this control method is that the more detailed the steps of the combination of input currents, the more time and economic costs are incurred. In this paper, an LED lighting control method that applies interpolation and combination calculation based on the minimum spectral power distribution information for each light source is proposed to reproduce the CCT of natural light. First, five minimum SPD information for each channel was measured and collected for the LED lighting, which consisted of light source channels with different CCTs and implemented input current control function of a 256-steps for each channel. Interpolation calculation was performed to generate SPD of 256 steps for each channel for the minimum SPD information, and SPD for all control combinations of LED lighting was generated through combination calculation of SPD for each channel. Illuminance and CCT were calculated through the generated SPD, a control index DB was constructed, and the CCT of natural light was reproduced through a matching technique. In the performance evaluation, the CCT for natural light was provided within the range of an average error rate of 0.18% while meeting the recommended indoor illumination standard.

Influence Factors Affecting the Longitudinal Force of Continuous Welded Rail on Railroad Bridges (장대레일 철도 교량의 축력 영향인자 분석)

  • Kim Kyung Sam;Han Sang Yun;Lim Nam Hyoung;Kang Young Jong
    • Proceedings of the KSR Conference
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    • 2003.10b
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    • pp.385-390
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    • 2003
  • Recently, use of Continuous Welded rail(CWR) is increased for structural, economical reason but new problem is caused accordingly and phenomenon that give threat in traveling by ship stability of train is led. According as rail is prolonged, excessive relative displacement and longitudinal force can happen to rail by temperature change and external force. Specially, buckling or fracture of rail can happen in railroad bridges because relative displacement by bridge and properties of matter difference between rail grows and additional axial force happens to rail by behavior of bridge. According to several study, longitudinal force of rail in bridge is influenced with ballast resistance, elongation length, boundary condition, stiffness of framework. Non-linear behavior of ballast acts by the most important factor in interaction between rail and bridge. Therefore, must consider stiffness of bridge construction with non-linear characteristic of ballast and stiffness of base for accuracy with longitudinal force calculation and analyze. In this study, perform material non-linear analysis for longitudinal force of CWR and three dimensional buckling analysis to decide buckling force.

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