• 제목/요약/키워드: LED drive circuit

검색결과 39건 처리시간 0.023초

압전 변압기를 이용한 고주파 DC-DC 컨버터 구동에 관한 연구 (A study on High Frequency DC-DC Converter Drive using a Piezoelectric Transformer)

  • 황락훈;나승권;최기호
    • 한국산학기술학회논문지
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    • 제11권2호
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    • pp.476-484
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    • 2010
  • 최근, 압전 변압기 기술의 급속한 발전으로 권선형 변압기를 대체할 수 있는 다양한 분야에 응용되고 있다. 압전 변압기는 자계의 잡음이 없고, 크기가 소형화되며 고효율과 고전력 밀도, 누설자속이 없어 노이즈 발생이 없고, 공진주파수만을 이용하므로 출력파형이 정현파에 가까워 고조파 잡음이 없는 등 권선형 변압기에 비해서 여러 가지 장점을 갖고 있다. 본 연구는 87.2[KHz]정도의 스위칭 모드에서 두께진동 모드 적층형 압전 변압기를 이용하여 전기적인 등가회로를 적용하여 DC-DC컨버터를 동작 하였다. 또한 DC-DC컨버터를 제안된 회로에 의해서 구동 고휘도 LED 구동 전원장치로써의 가능성을 제시 하였다.

인덕터 전류검출이 필요없는 불연속모드 인터리브드 PFC 부스트 컨버터의 연구 (Study of DCM Interleaved Boost PFC Converter without the Detection of the Inductor Current)

  • 나재두
    • 전기학회논문지P
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    • 제65권4호
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    • pp.303-308
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    • 2016
  • A light-emitting diode (LED) has been increasingly applied to various industrial fields and general lightings because of its high efficiency, low power consumption, environment-friendly characteristic and long lifetime. To drive this LED lighting, various types of power converters have been applied. Also, power factor correction (PFC) techniques play an important role in the power supply technology. In this paper, design and control of a DCM interleaved boost PFC converter is discussed. The proposed converter can reduce current ripples at input and output side by cancelling an each phase of inductor currents. Since the IC does not require the auxiliary winding of inductor for current detection, simple PFC circuit is achieved. Therefore, it contributes to increase efficiency and downsize the whole system volume, cost. Also, the performance of the proposed system is demonstrated through experiments.

I2C 슬래이브 칩의 주소 설정을 위한 RC회로를 이용한 효과적인 아날로그-디지털 변환기 설계 (A Design of Effective Analog-to-Digital Converter Using RC Circuit for Configuration of I2C Slave Chip Address)

  • 이무진;성광수
    • 조명전기설비학회논문지
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    • 제26권6호
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    • pp.87-93
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    • 2012
  • In this paper, we propose an analog-to-digital converter to set the address of a I2C slave chip. The proposed scheme converts a fixed voltage between 0 and VDD to the digital value which can be used as the address of the slave chip. The rising time and the falling time are measured with digital counter in a serially connected RC circuit, while the circuit is being charged and discharged with the voltage to be measured. The ratio of the two measured values is used to get the corresponding digital value. This scheme gives a strong point which is to be implementable all the parts except comparator using digital logic. Although the method utilizes RC circuit, it has no relation with the RC value if the quantization error is disregarded. Experimental result shows that the proposed scheme gives 32-level resolution thus it can be used to configure the address of the I2C slave chip.

시그마 델타 변조에 의한 LED 드라이버의 입력 콘트롤러 설계 (Delta Sigma Modulation of Controller Input Signal for the LED Light Driver)

  • 엄기홍
    • 한국인터넷방송통신학회논문지
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    • 제16권2호
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    • pp.151-155
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    • 2016
  • 우리는 이 논문에서 ADPCM (adaptive differential pulse code modulation)을 적용함으로써 디밍 콘트롤러를 갖는 LED 드라이버의 설계를 제시한다. ADPCM 장비는 고해상도를 가지고 LED 전류를 정확하게 제어하며, 고조파 전류 펄스의 퍼짐으로 인하여 초래되는 RFI 를 감소시켜 준다. 또한 제어 동작의 정밀도를 높여준다. 이 연구에서 LED에 펄스 전류를 인가함으로써 고효율 에너지의 LED를 제어하는 디지털 제어회로의 설계를 제시한다. 우리가 설계한 LED 전류구동시스템은 디지털 제어 부와 아날로그 SMPS (스위치 모드 파워 서플라이)를 별도로 구현한 두개의 시스템이다. 입력레벨이 0.7 인 경우의 시뮬레이션 결과는 시그마 델타 변조를 하여 얻은 D/A 컨버터의 출력을 나타내었다. 개수가 510 개인 펄스신호의 경우 0.15 % 의 정밀도를 얻을 수 있었다.

Sliding Mode Current Controller Design for Power LEDs

  • Kim, Eung-Seok;Kim, Cherl-Jin
    • Journal of Electrical Engineering and Technology
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    • 제6권1호
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    • pp.104-110
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    • 2011
  • High-brightness LED control is required for stable operation, thus the driver and control system must be designed to deliver a constant current to optimize reliability and ensure consistent luminous flux. In this paper, the sliding mode current controller is designed to adjust the illumination density of power LEDs. The controller design model of power LEDs, including its driving circuit, is proposed to realize the dimming control of power LEDs. A buck converter is introduced to drive the power LEDs and reduce the input voltage to a lower level. The sliding mode software controller is implemented to adjust the dimming of power LEDs. The proposed strategy for driving power LEDs is investigated and comparatively studied by experiments.

모바일용 White-LED Driver IC에 관한 연구 (A Study of White-LED Driver IC for Mobile Applications)

  • 고영석;박시홍
    • 한국전기전자재료학회논문지
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    • 제22권7호
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    • pp.572-575
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    • 2009
  • In this study, we proposed WLED(White-Light Emitting Diode) driver IC for mobile applications. This IC drove WLED for mobile applications with low input voltage and high efficiency by using boost converter. The device was designed by using boost converter applied current-mode control algorithm and provided PWM(Pulse Width Modulation) & analog dimming. Designed IC consisted of bias block, drive block, control block, protection block. We confirmed this device worked well through a application PCB (Printed Circuit Board) test.

새로운 H-type 스너버를 이용한 차량 헤드램프용 고효율 컨버터 (High-Efficiency Converter for Automotive Headlamp Using New H-type Snubber)

  • 김성주;김선필;정태욱;박성준;박성미
    • 조명전기설비학회논문지
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    • 제29권10호
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    • pp.65-72
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    • 2015
  • Recently, LED light has been increasingly adopted for vehicles in both domestic and foreign automotive markets, while a variety of LED lights have been developed to be used particularly for headlamps. In this paper, we propose an H-type resonant snubber circuit topology for high efficiency of vehicle LDM (LED Driver Module) and realized LDM functions for vehicle headlamp by designing high-efficiency convertors. In addition, this study reduced the financial burden by configuring the system to control the whole with micom except for the use of individual dedicated chips to drive LED for high and low beam. In order to verify the validity of the proposed H-type resonant snubber capable of soft switching, simulations were performed using PSIM. As a result, the validity was experimentally verified by creating a prototype. Moreover, in order to actually attach the headlamp, the performance of the proposed convertor was confirmed by designing LDM to the limited size. Communications between the headlamp and higher controller were realized using LIN(Local Interconnect Network).

고출력 과도전자파에 의한 반도체 소자의 파괴효과 (The Destruction Effects of Semiconductors by High Power Electromagnetic Wave)

  • 황선묵;홍주일;허창수
    • 전기학회논문지
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    • 제56권9호
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    • pp.1638-1642
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    • 2007
  • This paper investigated the destruction effect of the semiconductors by impact of high power electromagnetic wave. The experiments is employed as an open-ended waveguide to study the destruction effects on semiconductor using a 2.45 GHz 600 W Magnetron as a high power electromagnetic wave. The semiconductors are located at a distance of $31cm\sim40cm$ from the open-ended waveguide and are composed of a LED drive circuit for visual discernment. Also the chip condition of semiconductor is observed by SEM(Scanning Electron Microscope) analysis. The semiconductor are damaged by high power electromagnetic wave at about 860 V/m. The SEM analysis of the destructed devices showed onchipwire and bondwire destructions. Based on the result, semiconductor devices should have plan to protect the semiconductor devices form high power electromagnetic wave. And the database from this experiment provides the basis for future investigation.

의도 고출력 전자파에 의해 오동작 되는 CMOS소자의 전류특성 (Current Characteristics of CMOS device Broken by Intentional High Power Electromagnetic Wave)

  • 황선묵;홍주일;한승문;박신우;허창수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1516-1517
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    • 2007
  • This paper investigated the breakdown effect of the CMOS device by impact of high power electromagnetic wave. The experiments employed a waveguide to study the current characteristics of CMOS device broken by high power electromagnetic wave. The CMOS device were composed of a LED drive circuit for visual discernment. Also CMOS device broken by high power electromagnetic wave was observed by power current. The CMOS device were broke by high power electromagnetic wave at about 10 kV/m and when power current is 75 mA. Based on the result, CMOS devices should show plan to protect the CMOS devices by high power electromagnetic wave. And the database from this experiment should provide the basis for future investigation.

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