• 조명전기설비학회논문지
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• 제26권4호
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• pp.1-5
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• 2012

By using LED optical devices and improving the efficiency of optical devices as well as lighting apparatus for humans, LED lighting industry puts the purpose of manufacturing the main products related with information, electric, large-sized LCD BLU, automobile, shipbuilding, agriculture, medical treatment, environment, and telecommunications, etc. Moreover, the main products and the industrial lighting products are manufactured with fusion, as the result, LED lighting industry provides various effects as well as sources of technology based on practical use of LED technology in order to develop the industry from the perspective of the lower price, the higher efficiency, the higher function, the deeper reliance. In the future, not only the development of new LED technology but also the fusion and combination of digital IT technologies using wire-wireless communication, sensor, controller, and artificial intelligence will be expected to create new industrial fields.

• Journal of Power Electronics
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• 제16권2호
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• pp.815-822
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• 2016

The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.

• 광산업정보
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• 통권34호
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• pp.12-17
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• 2006

대만은 광산업 분야를 OE(Optoelectronics Components, FPD(Flat Panel Display), Optical Storage, Optical Lens Components & Laser Applications, OFC(Optical Fiber Communications, Optical Input & Output Devices 등 6개 대분류로 나누고 있으며 수년간 중점적으로 육성해 온 분야는 OE 및 FPD와 관련이 큰 LED 분야이다.

• 한국진공학회지
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• 제21권3호
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• pp.164-170
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• 2012

청색 발광다이오드(LED) InGaN/GaN의 방사 피크 파장에 따른 LED 소자의 성능 저하를 광학적 및 전기적 특성을 고려하여 조사하였다. 방사 피크 파장이 437~452 nm인 LED 소자에 전류를 각각 60 mA, 75 mA, 그리고 90 mA로 구동하여 장시간 동안 스트레스를 주었다. 형광체의 유무에 따라서 LED 소자의 광 감쇠 특성을 관측하였다. 형광체가 없는 소자의 광 감쇠 특성은 피크 파장이 단파장일수록 급속하게 떨어진다. 형광체가 있는 소자는 형광체가 없는 것보다 감쇠 특성이 둔감해진다. 전기적 특성은 방사 피크 파장에 의존하지 않고, 스트레스 시간에 따른 LED의 내부 저항이 서서히 증가하는 현상으로 나타난다. 피크 파장에 따른 외형변화는 동일 전류 조건에서 단파장일 때 열화현상이 심하게 발생한다. 이는 청색 발광다이오드에서 발생한 빛의 파장이 단파장영역으로 갈수록 칩 외의 재료에서 단파장 광 흡수가 증가하여 열화현상이 가속화되는 것으로 분석된다. 따라서 LED 소자의 장수명을 얻기 위해서는 청색 칩의 방사 피크 파장과 소자재료의 광 열화해석이 중요하다.

• 한국광학회지
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• 제35권5호
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• pp.235-240
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• 2024

코로나 팬데믹 이후 UV 광원을 이용한 공간 살균효과에 대한 연구와 응용이 급속히 증가하고 있다. 본 논문에서는 실내 공간환경 시스템이나 조명장치에 내장할 수 있는 UV LED 광원의 공간 살균 효과를 조명광학적인 접근을 통해 정량적으로 분석하였다. 이를 통하여 공간 살균력이 우수한 것으로 알려져 있는 275±5 nm 파장 영역의 실내공간 살균 효과 최적화 기반을 마련할 수 있을 것으로 전망한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1459-1461
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• 1996

The optical and electrical properties of High Power AlGaAs/AlGaAs Infrared LED with DDH( Double power Double Hetero Junction) structure are investigated. The high power LED is recently studied in order to apply to high speed communication devices. The power out of AlGaAs/AlGaAs with DDH structure is 13.0[mW], the forward voltage is 1.45[V], and the average decrease rate of power out is about 5[%] after aging test. The optical and electrical properties of DDH structure LED are superior than that of SH structured LED. The DDH structured LED is suitable to the high speed communication devices.

• 전자공학회논문지D
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• 제34D권9호
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• pp.64-71
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• 1997

A new etching technique of meltback was investigated for GaAs lensed optical devices with selective windows opending in the LPE (liquid phase epitaxy) system. In the meltback process, the etch depth and the etch shape were controlled by the degree of under-saturation, etch time and other parameters. A GaAs/AlGaAs DH layer was grown on the selectively etched hemispherical well for optical device application such as lensed surface emitting LED. The regrowth process were related with the coolin grate and the well to well spacing. A novel surface emitting LED with hemispherical AlGaAs lens was fabricated using the meltbakc and regrowth as the key process for AlaAs lens array. The light emitting efficiency of the LED was upto three times higher than the similar structure LED without lens. The meltback and regrowth technique was applicable to manufacture the optical device in LPE.

• 센서학회지
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• 제24권4호
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• pp.232-238
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• 2015

In this paper, we introduce a passive transponder in which an LED is used for both a light transmitter and a receiver, and a solar cell is used for supplying power to the all devices in the transponder. The LED in the transponder operates as a photodetector in the receiving mode, and acts as a light source in the transmitting mode. The current responsivity of the LED detector was measured to be in the order of $10^{-4}A/W$, and the receiving bandwidth with a load resistance of $10k{\Omega}$ was about 10 to 30 kHz. Using the LED for an optical transceiver in a VLID transponder, the detection range was about 70 cm when the transponder was illuminated by the visible light from a $3{\times}3$ LED array in a reader.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.1-5
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• 2023

In the past, display devices have undergone many changes, such as plasma TVs and LCDs, and have continued to develop. Recently, new display technologies, such as Organic Light Emitting Diode displays and Inorganic Light Emitting Diode displays, have been developed. Among them, Micro LED displays have the potential to improve performance more than LCDs and OLEDs, but a lot of effort and time are needed until the mass production technology (transfer and bonding) of Micro LED displays is developed. We have developed a new Micro LED display light source that can be produced using existing transfer and bonding process technologies to enable faster commercialization of Micro LED in the industry. This light source is TFT deposition on LED. TFT deposition on LED has the advantage of being able to produce displays using existing process technology, making early commercialization of display application products possible. In this study, we applied the Active Driving method to verify the performance of TFT deposition on LED as a display to determine its commercialization potential. Additionally, to facilitate faster application of Micro LED in the industry, we applied TFT deposition on LED to Optical Wireless Communication systems, which are widely used in application service areas such as safety/security and sensors, to verify its communication performance. The experimental results confirmed that TFT deposition on LED is not only capable of AM driving but can also be applied to OWC systems.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.920-923
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• 2013

In this paper, the characteristics of a carbon nanotube composite heat sink proposed to replace the advanced Al heat sinks for LED lighting devices were studied. Proposed CMP-PLA heat sink was made by mixing 20~70 wt% carbon nanotube, 20~70 wt% bio-degradable polymer of melt-blended PLA (poly lactic acid) and PBS (poly butylene succinate) and PLA nucleating agents composed of the mixture of soybean oil and biotites, at $150{\sim}220^{\circ}C$ with 1,000~1,500 rpm. Optical and electric characteristics of 7.5 W LED lighting devices using heat sinks with such prepared CMP-PLA were investigated. And, the properties of the heat, which was not released from the CMP-PLA type heat sinks, was also investigated. The color temperature of LED lighting devices using the CMP-PLA heat sinks was 5,956 K, which is x= 0.32 and y= 0.34 in the XY chromaticity, and the color rendering index was 75. The luminous flux and the luminous efficiency of LED lighting devices using the CMP-PLA heat sinks was 540.6 lm and 72.68 lm/W respectively. Measured initial temperature of the heat sinks was $27^{\circ}C$, and their temperature increased as time to be saturated at $52^{\circ}C$ after an hour.