• Title/Summary/Keyword: LED (Light-Emitting Diode)

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Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

  • Park, Yun Soo;Lee, Hwan Gi;Yang, Chung-Mo;Kim, Dong-Seok;Bae, Jin-Hyuk;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • Journal of the Optical Society of Korea
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    • v.16 no.4
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    • pp.349-353
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    • 2012
  • Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

Evaluation of High-power Light Emitting Diode Curing Light on Sealant Polymerization (고출력 발광 다이오드 광중합기의 치면열구전색제 중합능 평가)

  • Park, Youngjun;Lee, Jewoo;Ra, Jiyoung
    • Journal of the korean academy of Pediatric Dentistry
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    • v.46 no.1
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    • pp.57-63
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    • 2019
  • This study aimed to determine whether the curing times of Xtra Power and High Power modes of high-power light emitting diode (LED) curing light are sufficient for polymerization of resin sealants. The specimens were prepared and their microhardness values were measured and compared with those of specimens polymerized under conventional LED curing light. The filled sealant polymerized for 8 seconds in the High Power mode and for 3 seconds in the Xtra Power mode showed significantly lower microhardness than the control specimen (p = 0.000). The unfilled sealant polymerized for 8, 12 seconds in the High Power mode and for 6 seconds in the Xtra Power mode showed significantly lower microhardness than the control specimen (p = 0.000). The results of this study suggest that the short curing time with the Xtra Power and High Power modes of highpower LED curing light are not sufficient for adequate polymerization of sealants under specific conditions, taking into account the curing times and the type of sealant.

Effect of Fabricating Nanopatterns on GaN-Based Light Emitting Diodes by a New Way of Nanosphere Lithography

  • Johra, Fatima Tuz;Jung, Woo-Gwang
    • Korean Journal of Materials Research
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    • v.23 no.3
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    • pp.177-182
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    • 2013
  • Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

The Effect of LED Light Irradiation on Skin Injury Cure of Rat (LED 광원이 Rat의 피부 창상 치유에 미치는 영향)

  • Cheon, Min-Woo;Kim, Seong-Hwan;Park, Yong-Pil;Kim, Tae-Gon;Yu, Seong-Mi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1087-1092
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    • 2007
  • We developed the 4-channel Light Medical Therapy Apparatus for Skin Injury Cure using a high brightness LED. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity and reservation. In this paper, the designed device was used to find out how high brightness LED light affects the skin injury of SD-Rat(Sprague-Dawley Rat). In the experiment, $1\;cm^2$ wounds on the skin injury of SD-Rat(Sprague-Dawley Rat) were made. Light irradiation group and none light irradiation group divided, each group was irradiated one hour a day for 14 days. In result, compared with none light irradiation group, the lower incidence of inflammation and faster recovery was shown in light irradiation group.

Light Extraction Improvement of 400 nm Wavelength GaN-Based Light-Emitting Diode by Textured Structures (거친 표면구조를 이용한 400 nm 파장 GaN계 발광다이오드의 광 추출효율 개선)

  • Kim, Duck-Won;Yu, Soon-Jae;Seo, Ju-Ok;Kim, Hee-Tae;Seo, Jong-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.7
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    • pp.1514-1519
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    • 2009
  • We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

A Study on the Various Light Source Radiation Conditions and use of LED Illumination for Plant Factory (식물공장 각종광원의 방사조건과 LED조명의 활용에 관한 연구)

  • Yoon, Cheol-Gu;Choi, Hong-Kyoo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.10
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    • pp.14-22
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    • 2011
  • The artificial lights to be introduced for the plant factories is requiring the artificial light resources with minimizing the energy consumption to reduce the greenhouse gases which is a major cause of global warming, and maximizing the efficiency in photosynthesis effect light-wave range, in which the plants can be greatly grown and developed, and having the signal light-wave range for forming the light types. the best growing and developing environment for the plants has recently realized with utilizing the LED(Lighting Emitting Diode) lamps, as a environment-friendly green lamps, which can elevating the light efficiency with using only the specific light wave range. In this study, to provide the necessary lights for the full artificial light type of the plant factory, the following research/study and experiments has been conducting. experiments of the spectrum for each light sources, and LED, The intensity of illumination, Irradiance, Photosynthesis Photon Flux Density.

A Study on the Optimal Design for Optical Efficiency of LED (LED의 광효율 최적설계에 관한 연구)

  • Song, Young-Jae;Hong, Min-Sung
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.20 no.3
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    • pp.361-367
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    • 2011
  • In this paper, it was attempted to analyze the optimal design of light emitting diode (LED), a source of back light unit (BLU). LED is beginning with commercialized red LED which is made by GaAsP compound semiconductor, and has been developed focusing on liquid crystal panel. In order to get the optimal design, optical simulation was made by analyzing luminosity shape, reflector angle, chip depth, and chip position of LED lighting. Final results show that the proposed LED characteristics were useful to increase light efficiency and it has been proven by distribution chart for actual exposed light on the light guide panel (LGP).

Capacitor-Diode Current-Balancing Circuit for Multi-Channel LED Backlight System (다중채널 LED 백라이트를 위한 Capacitor-Diode 전류평형 회로)

  • Park, Sung-Han;Jung, Young-Jin;Hong, Sung-Soo;Han, Sang-Kyoo
    • Proceedings of the KIPE Conference
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    • 2011.07a
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    • pp.222-223
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    • 2011
  • 최근 저전력 소모와 얇은 두께, 무 수은, 다양한 색 표현력, 빠른 응답 속도 등의 다양한 장점을 가진 LED(Light Emitting Diode)를 광원으로 이용하는 LCD(Liquid Crystal Display) TV가 큰 주목을 받고 있다. 이러한 LCD TV의 화면을 균등한 휘도로 표현하기 위해 기존의 구동회로는 다 채널의 LED를 정전류로 제어하는 DC/DC 컨버터가 채널마다 각각 적용되었고, 이는 원가 상승 및 효율 저하의 원인이 되었다. 이를 해결하기 위하여 본 논문에서는 각 LED 채널에 적용되는 DC/DC 컨버터 없이 트랜스포머, 커패시터, 다이오드를 이용하여 모든 LED 채널의 정전류 제어가 가능한 저가격형 구동회로를 제안한다. 이는 전력변환 효율과 전력밀도를 획기적으로 개선할 수 있고 수동소자만을 사용하므로 높은 신뢰성을 확보할 수 있다. 본 논문에서는 제안된 회로에 대한 이론적 해석과 실험을 통해 제안 회로의 타당성을 검증한다.

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Overview of LED Communication Networks

  • Huynh, Vu Van;Le, Nam-Tuan;Uddin, Muhammad Shahin;Choi, Sun-Woong;Jang, Yeong-Min
    • Information and Communications Magazine
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    • v.28 no.12
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    • pp.50-60
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    • 2011
  • Visible light communication(VLC) is one type of short-range, optical, and wireless communication system utilizing light emitting diode(LED) and laser diode(LD) as optical source. In a VLC system, visible light is used as a transmission medium and used to illuminate. Using VLC has a lot of advantages: it is harmless to human body; it transmits with high power, and it has excellent security, a high data rate, and a license free frequency band. With such a unique blend of communication and illumination in one system, the most common application would be an indoor environment. We aim at reviewing key issues in VLC network such as : FOV(field of view), priority MAC, cooperative MAC, link switching, LED-ID technique, cell site diversity, and link recovery.

p-n heterojunction composed of n-ZnO/p-Zn-doped InP (n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구)

  • 심은섭;강홍성;강정석;방성식;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.126-129
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    • 2001
  • A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

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