Characteristics of $1.3\;{\mu}m$ InAs/GaAs Quantum Dot Laser Diode for High-Power Applications
(고출력 응용을 위한 $1.3\;{\mu}m$ InAs/GaAs 양자점 레이저 다이오드의 특성 연구)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2006.06a
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- pp.477-478
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- 2006