• Title/Summary/Keyword: LC Resonant Circuit

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A 0.18-um CMOS 920 MHz RF Front-End for the IEEE 802.15.4g SUN Systems (IEEE 802.15.4g SUN 표준을 지원하는 920 MHz 대역 0.18-um CMOS RF 송수신단 통합 회로단 설계)

  • Park, Min-Kyung;Kim, Jong-Myeong;Lee, Kyoung-Wook;Kim, Chang-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.423-424
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    • 2011
  • This paper has proposed a 920 MHz RF front-end for IEEE 802.15.4g SUN (Smart Utility Network) systems. The proposed 920 MHz RF front-end consists of a driver amplifier, a low noise amplifier, and a RF switch. In the TX mode, the driver amplifier has been designed as a single-ended topology to remove a transformer which causes a loss of the output power from the driver amplifier. In addition, a RF switch is located in the RX path not the TX path. In the RX mode, the proposed low noise amplifier can provide a differential output signal when a single-ended input signal has been applied to. A LC resonant circuit is used as both a load of the drive amplifier and a input matching circuit of the low noise amplifier, reducing the chip area. The proposed 920 MHz RF Front-end has been implemented in a 0.18-um CMOS technology. It consumes 3.6 mA in driver amplifier and 3.1 mA in low noise amplifier from a 1.8 V supply voltage.

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Pulse Width and Pulse Frequency Modulated Soft Commutation Inverter Type AC-DC Power Converter with Lowered Utility 200V AC Grid Side Harmonic Current Components

  • Matsushige T.;Ishitobi M.;Nakaoka M.;Bessyo D.;Yamashita H.;Omori H.;Terai H.
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.484-488
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    • 2001
  • The grid voltage of commercial utility power source hi Japan and USA is 100rms, but in China and European countries, it is 200rms. In recent years, In Japan 200Vrms out putted single phase three wire system begins to be used for high power applications. In 100Vrms utility AC power applications and systems, an active voltage clamped quasi-resonant Inverter circuit topology using IGBTs has been effectively used so far for the consumer microwave oven. In this paper, presented is a half bridge type voltage-clamped high-frequency Inverter type AC-DC converter using which is designed for consumer magnetron drive used as the consumer microwave oven in 200V utility AC power system. This zero voltage soft switching Inverter can use the same power rated switching semiconductor devices and three-winding high frequency transformer as those of the active voltage clamped quasi-resonant Inverter using the IGBTs that has already been used for 100V utility AC power source. The operating performances of the voltage source single ended push pull type Inverter are evaluated and discussed for consumer microwave oven. The harmonic line current components In the utility AC power side of the AC-DC power converter operating at ZVS­PWM strategy reduced and improved on the basis of sine wave like pulse frequency modulation and sine wave like pulse width modulation for the utility AC voltage source.

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A High Voltage Poorer Supply for Electrostatic Precipitator with Superimposing Voltage Pulse on DC Source (펄스 및 직류 중첩형 전기집진기용 고전압 전원장치 개발 연구)

  • Kim, Jong-Soo;Rim, Geun-Hie;Lee, Sung-Jin;Kim, Seung-Min;Cho, Chang-Ho
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.12
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    • pp.624-630
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    • 2001
  • The trend of the regulations on environmental issues are getting tight. Responding to this trend new technologies such as moving electrodes, wide pitch and pulsed power supply are also introduced in the electrostatic precipitator(EP) systems. The introduction of wide pitch and moving electrodes enhances the system performance of the EPs by improving air-flow and by improving the ash reentrainment on rapping. The power supplies for the EPs developed up to date include thyristor-based dc or intermittent type, SMPS(switching mode power supply) type and the pulsed-power supply type. The use of the pulsed ones is known to improve dust-collecting efficiency of high resistivity ash and reduces back corona occurrence in the collecting plate. There are two kinds of pulsed-power supplies; one with pulsed transformers and the other with direct dc switching devices. The latter uses rotary spark gap switches or semiconductor switches. Both have the merits and demerits: the spark gap switches are simple and robust but has short life time, hence, high maintenance cost, whereas the semiconductor switches have long life time but are costly. In this study, A high voltage power supply with superimposing voltage pulse on dc source was developed for EPs. This study describes circuit topology, operating principle of the scheme, and analysis of experimental results on Dong-Hae Power Plant. The pulsed power supply consists of a variable dc power supply with ratings of 60kV, 800mA and pulse generator which is made of high voltage thyristor-diode switch strings, an LC resonant tank and a blocking inductor. The pulse generator generates variable pulse-voltage up to 70kV using a high frequency resonant inverter with a variable dc source. Two prototypes were built and tested on 250MW DongHae power plant to verify the possibility of the commercial use and the normal operation in the transient states.

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2~6 GHz Wideband GaN HEMT Power Amplifier MMIC Using a Modified All-Pass Filter (수정된 전역통과 필터를 이용한 2~6 GHz 광대역 GaN HEMT 전력증폭기 MMIC)

  • Lee, Sang-Kyung;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.7
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    • pp.620-626
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    • 2015
  • In this paper, a 2~6 GHz wideband GaN power amplifier MMIC is designed and fabricated using a second-order all-pass filter for input impedance matching and an LC parallel resonant circuit for minimizing an output reactance component of the transistor. The second-order all-pass filter used for wideband lossy matching is modified in an asymmetric configuration to compensate the effect of channel resistance of the GaN transistor. The power amplifier MMIC chip that is fabricated using a $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors, Corp. is $2.6mm{\times}1.3mm$ and shows a flat linear gain of about 13 dB and input return loss of larger than 10 dB. Under a saturated power mode, it also shows output power of 38.6~39.8 dBm and a power-added efficiency of 31.3~43.4 % in 2 to 6 GHz.

A Study on the Inverter Type Neon Power Supply Using a Piezoelectric Transformer (압전 변압기를 이용한 인버터식 네온관용 변압기에 관한 연구)

  • 변재영;김윤호
    • The Transactions of the Korean Institute of Power Electronics
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    • v.8 no.6
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    • pp.504-511
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    • 2003
  • In this paper, inverter type neon power supply using a piezoelectric transformer is fabricated and its characteristic is investigated. Developed neon power supply is composed of basic circuit and blocks, such as rectifier part, frequency oscillation part and piezoelectric transformer and resonant half bridge inverters. In this paper for complement the low power limitation, piezoelectric transformer at parallel connected driving by inverter is studied for noon tubes system of high power. When piezoelectric transformer is connected with parallel, LC filter connection method with parallel and selection of inductance L and capacitor C of primary side is suggested for reduce unbalanced current at the terminal of each transformer. Piezoelectric transformers use piezoelectric ceramic devices. Thus it is wireless therefore it has high power density, high Isolation level, low loss, more light, and miniaturization. In addition, high voltage transfer ratio is expected because there is no leakage inductance. Also, it has economic merit that the electrical loss Is low because structure is simple, small and tighter weight.

Electronic Ballast for Metal Halide Lamps Using High Frequency Modulation Method (고주파 변조방법을 이용한 메탈할라이드 램프용 전자식 안정기)

  • 오덕진;문태환;조규민;김희준
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.5
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    • pp.438-445
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    • 2001
  • This paper presents a high frequency modulation electronic ballast for the metal halide lamp. As the proposed ballast operates in high frequency ranges and can start up the lamp using the LC resonant circuit without external igniter, the proposed ballast is very compact and has a good efficiency in comparison with the conventional low frequency electronic ballast. The proposed ballast is controlled with the modulated frequency in the range of 20kHz to 100kHz in order to avoid the acoustic resonance phenomenon. In this paper, a new realtime acoustic resonance detection method is proposed to evaluate the characteristics of the ballast. The no load protection algorithm and power control algorithm through the detection of the DC link current are described. Finally, the experimental results on the proto-type ballast of 150w metal halide lamp with the proposed methods are discussed.

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Fabrication of Inductors, Capacitors and LC Hybrid Devices using Oxides Thin Films (산화물 박막을 이용한 인덕터, 캐패시터 및 LC 복합 소자 제조)

  • Kim, Min-Hong;Yeo, Hwan-Guk;Hwang, Gi-Hyeon;Lee, Dae-Hyeong;Kim, In-Tae;Yun, Ui-Jun;Kim, Hyeong-Jun;Park, Sun-Ja
    • Korean Journal of Materials Research
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    • v.7 no.3
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    • pp.175-179
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    • 1997
  • bliniaturization oi microwave circuit components is an important issue with the development in the mobile communication. Capacitors, inductors anti hybrid devices of these are building blocks of electric circuits, and the fabrication of these devices using thin film technology will influence on the miniaturization of electronic devices In this paper, we report the successful fabrication of the inductors, capacitors and LC hybrid devices using a ferroelectric and a ferromagnetic oxide thin iilm. Au, stable at high temperatures in oxidizing ambient, is patterned by lift-off process, and oxide thin films are deposited by ion beam sputtering and chemical vapor deposition. These devices are characterized by a network analyzer in 0.5-15GtIz range We got the inductance of 5nH, capacitance oi 10, 000 pF and resonant frequencies of $10^{6}-10^{9}Hz$.

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