• 대한화학회지
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• 제49권6호
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• pp.517-520
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• 2005

• 대한전자공학회논문지TE
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• 제37권2호
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• pp.1-5
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• 2000

금속이온 농도를 변화시켰을때의 IMI-O 고분자 LB막에 대한 단분자막의 거동과 MIM구조의 LB막 소자에 대한 전기 특성 및 유전 특성을 조사하였다. π-A 등온선의 측정에서 금속 이온 농도가 증가함에 따라 단분자가 차지하는 극한 단면적이 증가하였다. 이러한 변화는 금속이온 농도 변화에 따른 금속이온의 강도 증가에 의한 단분자막의 거동의 차이에 의한 것으로 생각된다. 전압-전류 특성에서 ohmic 영역의 기울기로부터 구한 전기전도도는 금속 이온의 농도가 증가할 수록 증가하였다. 이것은 전개분자와 금속이온간의 결합에 의한 극한 단면적의 변화가 전기전도도에 직접적인 관계가 있기 때문으로 생각된다. 한편, 유전 특성에서 금속이온의 농도가 증가할 수록 허수부 유전율이 최대가 되는 주파수 역시 증가하였다. 따라서 금속이온의 증가에 의해 완화시간 γ가 감소되는 것을 알 수 있었다.

• 대한전기학회논문지
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• 제44권10호
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• pp.1311-1316
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• 1995

The electrical properties of the Langmuir-Blodgett (LB) films layered with arachidic acid were studied at the room temperature. The sample was formed with 2 different structure ; One was Al/LB/Al and the other was Au/LB/Au. The precise structure of Al/LB/Al was considered as Al/Al$_{2}$O$_{3}$/LB/Al, because the natural oxide layer was formed on surface of lower Al electrode. The electrical conductivity of Al/Al$_{2}$O$_{3}$/LB/Al structure was determined the value of 3.5 * 10$^{-14}$ S/cm from the measurement of current-voltage (I-V) characteristics. The sample with the structure of Au/LB/Au was made to eliminate the influence of oxide layer in the electrical properties of the LB films. The short circuit current was observed in this sample from the I-V characteristics. To verify the reason of short circuit current generation, copper decoration method was employed to the 15 layers of LB films deposited on the Al and Au electrode each. The defects were shown on the films deposited with Au electrode. This results means that the defects on the LB films which layered with the Au electrode were contributed to the short circuit current. Several films (15, 31, 51, 71L) were deposited on the Au electrode and measured the size of defects with the copper decoration method. The size of defects becomes smaller as the film layer was increased. We conclude that the existence of defects affects the short circuit current generation.

• 한국응용과학기술학회지
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• 제31권1호
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• pp.44-49
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• 2014

인지질(L-${\alpha}$-phosphatidylethanolamine, LAPE) 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. LAPE 단분자층 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적특성은 0.5 N, 1.0 N, 1.5 N 및 2.0 N $KClO_4$ 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 LAPE LB막은 순환전압전류곡선으로부터 산화전류로 인한 비가역공정으로 나타났다. LAPE LB막은 전해질농도가 0.01 N, 0.05 N. 0.10 N, 0.15 N 과 0.20 N $KClO_4$ 용액에서 확산계수(D)는 각각 195, 15.9, 5.75, 1.38 및 $0.754cm^2s^{-1}{\times}10^{-9}$을 얻었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.503-507
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• 1999

Quartz crystal in contact with viscoelastic medium was described directly in terms of the electrical equivalent circuit of the system. Stearic acid was used as viscoelastic medium and deposited on the surface of quartz crystal using the Langmuir-Blodgett(LB) method. Impedance properties of quartz crystal coated with LB films which were investigated by using admittance diagram and $Ζ-\theta$ plot a method of impedance analysis. When stearic acid LB film was deposited on the surface of quartz crystal, resonant frequency of quartz crystal was changed about 100 Hz/layer. This result illustrates the ability of the sensor system to detect small amounts of special gas in air.

• E2M - 전기 전자와 첨단 소재
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• 제7권6호
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.198-201
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• 1997

The new system for identification of organic vapours and analysis method of mechanism between organic vapours and sensitive materials were attempted using the resonant resistance and resonant frequency of Quartz Crystal Analyzer (Q. C. A.). The resonant resistance shift means rheological changes in sensitive LB films occurred by the adsorption of organic vapours, while the resonant frequency shift represent the mass of organic vapour loaded in or on the sensitive LB films. It is thought that we can obtain more accurate response mechanism of organic vapour using the resonant frequency and resonant resistance diagram. The polymeric sensitive material were quantitively depositied using the LB method. In the experimental results, the adsorption behavior of organic vapour response can be decided by two type ; surface adsorption and penetration into sensitive material. Organic vapours had different positions in the Frequency-Resistance (F-R) diagram as to the kinds and concentrations of organic vapours. Thus F-R diagram can be applied to the development of one channel gas sensing system using the Quartz Crystal Analyzer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.240-243
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• 1995

The basic electrochemical and photochemical behavior of ultrathin mono- and hetero-type LB film of amphiphilic Ru bipyridine complex adsorbed on ITO electrode by the Langmuir- Blodgett(LB) method as monolayer and alternating multilayer state. With theoretical equation of cyclic voltammetry for redox species, the cyclic voltammogram were simulated successfully taking account the interaction parameters. We could fit almost all measured voltammograms with k$^{\circ}$=72s$\^$-1/, ${\alpha}$$\sub$a/=0.44, ${\alpha}$$\sub$c/=0.54, $\Gamma$$\sub$T/=1.4${\times}$10$\^$-10/, k=0.015s$\^$-1/ values. The AFM images of mono and hetero type LB film surfaces on ITO were also studied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.194-197
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• 1997

The LB technique is one of the most powerful fabricating methods of organic ultra-thin film, which deposits a monolayer films in molecular level on the surface of the substrate. We have investigated the electrical characteristics of Myristic acid, Stearic acid and Arachidic acid LB films for horizontal direction to develop for the gas sensor. The optimum conditions for a film deposition were obtained by measurement of $\pi$-A isotherm. The status of the deposited film was confirmed by measurement of UV absorbance. We could distingished the difference of I-V characteristics for the fatty acid for the horizontal direction. The conductivity of fatty acid LB films for horizontal direction was 10$^{-7}$ ~ 10$^{-9}$ [S/cm] that mean like semiconductor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.281-284
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• 1995

A molecular photodiode was fabricated with hetero-Langmuir-Blodgett (LB) film consisting of an electron accepter(A) and sensitizer. N-Allyl-N-[3-propylamido-N\",N\"-야(n-octadecyl)]-4,4-bipyridum Dibromide and 7,8-dimethyl-10-dodecyl isoalloxan-zine were used as A and S units, respectively. By aligning hefter-LB film of A/S units on ITO glass with an aluminium thin film, a molecular photodiode with the structure of Metal/Insulator/Metal(MIM) was constructed. Due to excitation by irradiation with a 460nm monochromatic light source, the photo-induced unidirectional flow of electrons in the MIM device could be achieved and was detected as photocurrents. The direction of energy flow was in accordance with the energy level profile across the LB films. The photo switching function was achieved and the rectifying characteristics was obserbed in the molecular devise.