• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.48-48
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• 2002

• Proceedings of the Zoological Society Korea Conference
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• 2003.08a
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• pp.164.2-164
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• 2003

No Abstract, See Full Text

• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.673-675
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• 2003

The image restoration algorithm for microwave imaging radiometer is proposed. A blind deconvolution method was proposed. A point spread function was identified and three deconvolution schemes were employed, Wiener filtering, Lucy- Richardson deconvolution, and Maximum Likelihood blind deconvolution. The experimental data is illustrated with restored image.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.160-160
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• 2004

• Proceedings of the PSK Conference
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• 2002.04a
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• pp.141.1-141.1
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• 2002

• Journal of the Korean Academy of Clinical Electrophysiology
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• v.7 no.1
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• pp.29-34
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• 2009

Purpose : This study aims to investigate into the change in muscle power, pain and muscle tension upon application of extracorporeal shock wave therapy (ESWT) and ultrasound (US) at trigger point (TrP) of the Scapular inter angle. Methods : In total of 24 human subjects that experience pain upon stimulation at the scapular inter angle were recruited. They were divided into three groups: control, ESWT and US group. Each group was subjected to appropriate stimulation three times per week for four weeks except the control group which had no restrictions in lifestyle. The ESWT group was subjected to Extracorporeal Shock Wave Therapy with a 2 $cm^2$ head, 20 times at speed of application of 60 pulses/min and depth of intrusion of 25 mm Whereas the US group was subject to Ultra sound therapy with 1$cm^2$ head, 1 MHz in frequency, 1.5 W/$cm^2$ of strength with five minutes of continuous application. Measurements were performed immediately prior to and at the end of the experiment. Results : There was no statistical significance in the change in muscle tension and muscle power as well as the difference between both groups before and after the experiment. VAS and VRS, all of which indicates changes in pain level, had statistically significant differences between them in pretest posttest comparisons. However, ESWT was superior to US in terms of decreasing muscle tension and pain while increasing muscle power. Conclusion : This study has made it evident that ESWT is far more reasonable to apply to TrP.

• Tuberculosis and Respiratory Diseases
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• v.74 no.5
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• pp.231-234
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• 2013

Aspergillus causes a variety of clinical syndromes in the lung including tracheobronchial aspergillosis, invasive aspergillosis, chronic necrotizing pulmonary aspergillosis, allergic bronchopulmonary aspergillosis, and aspergilloma. Aspergilloma usually results from ingrowths of colonized Aspergillus in damaged bronchial tree, pulmonary cyst or cavities of patients with underlying lung diseases. There are a few reports on endobronchial aspergilloma without underlying pulmonary lesion. We have experienced a case of endobronchial aspergilloma associated with foreign body developed in an immunocompetent patient without underlying lung diseases. A 59-year-old man is being hospitalized with recurring hemoptysis for 5 months. X-ray and computed tomography scans of chest showed a nodular opacity in superior segment of left lower lobe. Fiberoptic bronchoscopy revealed an irregular, mass-like, brownish material which totally obstructed the sub-segmental bronchus and a foreign body in superior segmental bronchus of the lower left lobe. Histopathologic examinations of biopsy specimen revealed fungal hyphae, characteristic of Aspergillus species.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• Journal of Physiology & Pathology in Korean Medicine
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• v.18 no.1
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• pp.306-309
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• 2004

Liver cirrhosis is caused by virus, alcohol, toxins, drugs and chronic hepatitis. Clinical symptoms of liver cirrhosis are severe fatigue, nausea, fever, dyspepsia, anorexia, RUQ pain, jaundice, ascites. We applied oriental medicines to patient who had chronic hepatitis and liver cirrhosis. Sodalgeonbitang-gamibang has been used to treat hepatitis and liver cirrhosis because of its beneficial effects. The patient symptoms began to improve after about one month of treatment. After medication we could find remarkable effect on clinical symptoms and blood test. So we hope that this clinical study is helpful in treat a patient with hepatic disease.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.