• Title/Summary/Keyword: KrF

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Micromachining of powder injection molded parts using ns UV laser (나노초 UV 레이저를 이용한 분말사출 부품의 미세기공)

  • Ahn, Dae-Hwan;Park, Seong-Jin;Kwon, Young-Sam;Kim, Dong-Sik
    • Laser Solutions
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    • v.13 no.1
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    • pp.1-5
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    • 2010
  • ln this work, the feasibility of using a UV laser for micromachining of powder injection molded parts is examined experimentally. The results, although preliminary, indicate that microfabrication of various parts by laser micromachining of the injection molded parts and then sintering is promising. Particularly, micromachining of a mixture composed of stainless steel particles and polyrner binders was studied using a KrF excimer laser.

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Observations of Exchange Coupling in Nd2Fe14B/Fe/Nd2Fe14B Sandwich Structures and Their Magnetic Properties

  • Yang, Choong-Jin;Kim, Sang-Won
    • Journal of Magnetics
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    • v.4 no.2
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    • pp.39-45
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    • 1999
  • Sandwich structures of$ Nd_2Fe_{14}B/Fe/Nd_2Fe_{14}B $magnetic films have been grown by a KrF excimer laser (λ=248 nm) ablation technique. Magnetic properties were characterized by varying the thickness of hard ($Nd_2Fe_{14}B$) and soft (Fe) magnetic films and the volume fraction as well. In the (x)nm[NdFeB]/(y)nm[Fe]/(x)nm[NdFeB]/(100) Si structure the thickness (x) was varied from 3.6 to 54 nm, and (y) from 15 to 112 nm. At (y) = 15~20 nm where the volume fraction of Fe corresponded to 61~75%, the sandwich structure exhibited an enhanced Mr/Ms and iHc as well from the result of the exchange coupling between the magnetic layers. Experimentally calculated exchange constant$ (A_s) of A_s = 2.5{\times}10^{-10} J/m$ was estimated using the intrinsic coercivity (iHc) of 1.2 kOe at 5 K for the sandwich magnetic trilayers.

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In-Cylinder Phenomena in a Swirl Type GDI Engine (스월형 GDI 엔진의 연소실내 현상 연구)

  • 김기성;박상규
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2001.05a
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    • pp.75-90
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    • 2001
  • For the purpose of helping development of a GDI(Gasoline Direct Injection) engine, the in-cylinder phenomena, such as the spray behaviors and fuel distributions, unburned fuel, and flame characteristics were investigated in a single cylinder GDI engine. The GDI engine was equipped with a swirl type electronic injector and SCV(Swirl Control Valve). PLIF(Planar Laser Induced Fluorescence) system with KrF Excimer laser was used for the measurements of the fuel distributions. The effects of the injector specifications, such as the spray cone angle and the offset angle on the fuel distributions and combustion characteristics were investigated. As a result, it was found that the injected fuel spray collided with the bottom of the bowl and moved upward along the exhaust side wall of the piston bowl. This fuel vapor played a important role in the instance of spark ignition. The injector specifications has a great influence on the flame characteristics.

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Thin Film Transistor with Transparent ZnO as active channel layer (투명 ZnO를 활성 채널층으로 하는 박막 트랜지스터)

  • Shin Paik-Kyun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.1
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    • pp.26-29
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    • 2006
  • Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

Pulsed Laser Deposition $Na_{0.5}K_{0.5}NbO_{3}$ Thin Film (PLD 기법에 의한 $Na_{0.5}K_{0.5}NbO_{3}$ 박막 제작)

  • 최원석;문병무;조중래
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.33-35
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    • 2000
  • Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na$_{0.5}$K$_{0.5}$NbO$_3$ (NKN) thin film have been grown on LaA1O$_3$ substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\phi$ scan data evidence highly c-axis oriented along the [001] direction.ion.

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Characterization of ZnO Thin Films prepared by Pulsed Laser Deposition Technique (PLD 기술로 제작된 ZnO 박막의 특성)

  • No, In-Jun;Shin, Paik-Kyun;Lee, Neung-Heon;Kim, Yong-Hyuk;Ji, Seung-Han;Lee, Sang-Hee;Han, Sang-Ok
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1404-1405
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    • 2006
  • Transparent ZnO thin films were deposited on quartz substrates by a KrF pulsed laser deposition (PLD) technique with different process conditions such as substrate temperature ($T_s$) and oxygen ambient pressure ($pO_2$). Surface morphology, crystal structure, and electrical properties of the ZnO films were investigated in order to characterize their thin film properties. The pulsed laser deposited ZnO films showed highly c-oriented crystalline structures depending on the process conditions: the highest FWHM (Full Width Half Maximum) value of (002) peak was observed for the ZnO film prepared at $T_{s}=550^{\circ}C$, $pO_2$=5mTorr and laser fluence of $2J/cm^2$.

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Study on the nonuniform modification of laser ablated HTS surface (레이저 융제된 HTS 표면의 불균일한 변조에 대한 연구)

  • Jeong, Young-Sik;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.251-253
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    • 1996
  • High temperature superconducting (HTS) target has been irradiated by excimer laser beam. The surface of HTS target has been changed and showed the formation of cones. The laser ablated HTS target surface has been systematically studied using a scanning electron microscope. A KrF excimer laser with a wavelength of 248 nm was used to ablate the HTS YBCO target. The size of laser beam focused on the target showed a rectangular shape of $9.7{\times}2\;mm^2$. The image of SEM shows the difference between the shapes of cones fanned at the boundary and at the center of the ablated area after 1,000 laser pulses.

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Preparing of the AI electrode for OLED by Sputtering Methode (스퍼터링법을 이용한 OLED용 Al 전극의 제작)

  • Kim, Kyung-Hwan;Keum, Min-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05a
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    • pp.72-75
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    • 2005
  • In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

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Capacitorless 1T-DRAM devices using poly-Si TFT

  • Kim, Min-Su;Jeong, Seung-Min;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.144-144
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    • 2010
  • 다결정 실리콘 박막트랜지스터 (poly-Si TFTs)는 벌크실리콘을 이용한 MOSFET소자에 비해 실리콘 박막의 형성이 간단하므로 대면적의 공정이 가능하며 다양한 기판위에 적용이 가능하여 LCD, OLED 등의 디스플레이 기기에 많이 이용되고 있다. 또한 poly-Si TFT는 3차원으로 적층된 소자의 제작이 가능하여 고집적의 한계를 극복할 소자로 주목받고 있다. 최근, DRAM은 캐패시터의 축소화와 구조적 공정이 한계점에 도달했으며 이를 극복하기 위하여 SOI 기판을 사용한 하나의 트랜지스터로 DRAM의 동작을 수행하는 1T-DRAM의 연구가 활발히 진행 중이다. 이러한 1T-DRAM 소자를 대면적과 다층구조의 공정이 가능한 poly-Si TFT를 이용하여 구현하면 초고집적의 메모리 소자를 제작 가능할 것이다. 따라서, 본 연구에서는 다결정 실리콘 박막트랜지스터 (poly-Si TFTs)를 이용한 1T-DRAM의 동작 특성을 연구하였다. 소자의 제작 방법으로는 200 nm의 열산화막이 성장된 p-type 실리콘 기판위에 상부실리콘으로 사용될 비정질 실리콘 박막을 LPCVD 방법으로 증착하였다. 다음으로 248 nm의 파장을 가지는 KrF 레이저를 이용한 eximer laser annealing (ELA) 공정을 통하여 결정화된 상부실리콘층에 TFT 소자를 제작하여 전기적 특성을 평가하였다.

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Laser beam application technology (레이저빔 응용 가공기술)

  • 윤경구;김재구;황경현
    • Journal of the KSME
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    • v.37 no.12
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    • pp.47-52
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    • 1997
  • 엑사이머 레이저는 Ar, Kr, Xe등의 희귀가스와 F, Cl과 같은 할로겐족 가스를 혼합하여 방전여기에 의해 발진되는 157-350mm 파장대에 자외선 레이저이다. UV레이저를 이용하면 종래의 기계 가공 공정으로 실현할 수 없는 극소형 및 초정밀의 기계구조, 센서 또는 액츄에이터를 비접촉식으로 할 수 있고 가공시 열손상이 거의 없다. 최근 제품의 소형화 및 박막화 추세에 따른 미세가공 기술의 급속한 발전을 살펴보면, Uv레이저를 이용한 실리콘 표면의 도핑(dopping)에 관한 연구, 미소전자 패키징에 레이저를 이용하는 방법뿐만 아니라, 레이저 유도에 의한 금속과 혼합물의 물질전달 현상을 활용한 마이크로 패터닝에 관한 연구도 진행되고 있다. 본 글에서는 여러가지 응용분야 중 레이저 어블레이션, 레이저유도화학에칭, 레이저 PVD등에 대하여 기술한다.

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