• Title/Summary/Keyword: Korean Films

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Recent Advances in Eco-friendly Nano-ink Technology for Display and Semiconductor Application (디스플레이 반도체 기술 적용을 위한 청정 나노잉크 제조 기술)

  • Kim, Jong-Woong;Hong, Sung-Jei;Kim, Young-Seok;Kim, Young-Sung;Lee, Jeong-No;Kang, Nam-Kee
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.1
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    • pp.33-39
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    • 2010
  • Printing technologies have been indicated as alternative methods for patterning conductive, semi-conductive or insulative materials on account of their low-cost, large-area patternability and pattern flexibility. For application of the printing technologies in manufacture of semiconductor or display modules, ink or paste composed of nanoparticles, solvent and additives are basically needed. Here, we report recent advances in eco-friendly nano-ink technology for semiconductor and display technology. Then, we will introduce an eco-friendly ink formation technology developed in our group with an example of manufacturing $SiO_2$ nanopowders and inks. We tried to manufacture ultrafine $SiO_2$ nanoparticles by applying a low-temperature synthetic method, and then attempted to fabricate the printed $SiO_2$ film onto the glass substrate to see whether the $SiO_2$ nanoparticles are feasible for the printing or not. Finally, the electrical characteristics of the films were measured to investigate the effect of the manufacturing parameters.

Development of Battery-free SAW Integrated Microsensor for Real Time Simultaneous Measurement of Humidity and $CO_2$ component (습도와 $CO_2$ 농도의 실시간 동시감지를 위한 무전원 SAW 기반 집적 센서 개발)

  • Lim, Chun-Bae;Lee, Kee-Keun;Wang, Wen;Yang, Sang-Sik
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.1
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    • pp.13-19
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    • 2009
  • A 440MHz wireless and passive surface acoustic wave (SAW) based chemical sensor was developed on a $41^{\circ}YX\;LiNbO_3$ piezoelectric substrate for simultaneous measurement of $CO_2$ gas and relative humidity (RH) using a reflective delay line pattern as the sensor element. The reflective delay line is composed of an interdigital transducer (IDT) and several shorted grating reflectors. A Teflon AF 2400 and a hydrophilic $SiO_2$ layer were used as $CO_2$ and water vapor sensitive films. The coupling of mode (COM) modeling was conducted to determine optimal device parameters prior to fabrication. According to simulation results, the device was fabricated and then wirelessly measured using the network analyzer. The measured reflective coefficient $S_{11}$ in the time domain showed high signal/noise (S/N) ratio, small signal attenuation, and few spurious peaks. In the $CO_2$ and humidity testing, high sensitivity ($2^{\circ}/ppm$ for $CO_2$ detection and $7.45^{\circ}/%$RH for humidity sensing), good linearity and repeatability were observed in the $CO_2$ concentration ranges of $75{\sim}375ppm$ and humidity levels of $20{\sim}80%$RH. Temperature and humidity compensations were also investigated during the sensitivity evaluation process.

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Graphoepitaxy of ZnO layers grown on periodic structured Si substrates (주기적 표면 구조의 SiO$_2$ 기판을 이용한 ZnO박막의 Graphoepitaxy)

  • Jung, Jin-U;Ahn, Hyeon-Cheol;Lee, Chang-Yong;Kim, Gwang-Hui;Choi, Seok-Cheol;Lee, Tae-Hun;Park, Seung-Hwan;Jung, Mi-Na;Jung, Myeong-Hun;Lee, Ho-Jun;Yang, Min;Yao, Takafumi;Chang, Ji-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.1042-1045
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    • 2005
  • The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

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A New HF/$NH_4F$/Glycerine Aqueous Solution for Protection of Al Layers During Sacrificial Etching of PSG Films (PSG 희생층 식각시 Al층을 보호하기 위한 새로운 HF/$NH_4F$/Glycerine 혼합 식각액)

  • Kim, Sung-Un;Paik, Seung-Joon;Kim, Im-Jung;Lee, Seung-Ki;Cho, Dong-Il
    • Journal of Sensor Science and Technology
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    • v.8 no.5
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    • pp.414-420
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    • 1999
  • The oxide sacrificial layer technology is one of the key technologies in surface micromachining. However, the commonly used aqueous HF solutions, including the $NH_4F$ buffered HF solutions (BHF), are known to attack the Al metal layers during the oxide sacrificial etch. A mixed $NH_4F$/HF/glycerine aqueous solution of 4:1:2 ratio is known to have the best etch selectivity between oxide and AI, but even this sacrificial etchant has a significant etch rate for AI. This paper reports an extensive experimental study on various concentration ratios for HF, $NH_4F$ and glycerine, and develops the optimal mixture ratio for sacrificial etching. At the $NH_4F$/HF/glycerine ratio of 2:1:4, the etch selectivity between PSG and Al improves by approximately 6 times over the previously known best selectivity, to a value of 7,700. At this condition, the measured etch rate of PSG film is approximately $2.1\;{\mu}m/min$, which is sufficiently fast. The developed sacrificial etchant allows the addition of a Al metal layer in surface micromachining, without the worry of Al layer erosion during sacrificial etch.

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Fabrication and Characteristics of Infrared Photodiode Using Insb Wafer with p-i-n Structure (p-i-n 구조의 InSb 웨이퍼를 이용한 적외선 광다이오드의 제조 및 그 특성)

  • Cho, Jun-Young;Kim, Jong-Seok;Son, Seung-Hyun;Lee, Jong-Hyun;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.8 no.3
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    • pp.239-246
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    • 1999
  • A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

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The Hall Measurement and TMA Gas Detection of ZnO-based Thin Film Sensors (ZnO 박막 센서의 TMA 가스 및 Hall 효과 측정)

  • Ryu, Jee-Youl;Park, Sung-Hyun;Choi, Hyek-Hwan;Lee, Myong-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.265-273
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    • 1997
  • The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. We investigate the surface carrier concentration, Hall electron mobility, electrical resistivity and sensitivity according to temperature variation and TMA gas concentration. The ZnO-based thin film sensors prepared by sputtering in oxygen showed higher surface carrier concentration, higher Hall mobility, higher sensitivity, and lower electrical resistivity than sensors prepared by sputtering in argon. The doping ZnO-based thin film sensors showed the same electrical properties in comparison with nondoping sensors. In case of sputtering on the oxygen gaseous atmosphere, the ZnO-based thin film sensors doped with 4.0 wt.% $Al_{2}O_{3}$, 1.0 wt.% $TiO_{2}$, and 0.2 wt.% $V_{2}O_{3}$ showed the highest surface carrier concentration of $5.95{\times}10^{20}cm^{-3}$, Hall electron mobility of $177\;cm^{2}/V{\cdot}s$, lowest electrical resistivity of $0.59{\times}10^{-4}{\Omega}{\cdot}cm$ and highest sensitivity of 12.1(working temperature, $300^{\circ}C$, TMA gas, 8 ppm).

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Growth of Thin Film Using Chemical Bath Deposition Method and Their Photoconductive Characteristics (CBD 방법에 의한 CdS 박막의 성장과 광전도 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeoung, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.3-10
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    • 1993
  • Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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Characterization of CdSe Thin Film Using Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 제작한 CdSe 박막의 특성)

  • Hong, K.J.;Lee, S.Y.;You, S.H.;Suh, S.S.;Moon, J.D.;Shin, Y.J.;Jeong, T.S.;Shin, H.K.;Kim, T.S.;Song, J.H.;Rheu, K.S.
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.81-86
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    • 1993
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

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A Comparative Case Study on Studio Specialized in Digital Concept Art -Focused on the Field of Animation and Game- (디지털 컨셉 아트 전문 스튜디오에 관한 사례 비교 연구 -애니메이션 및 게임 분야를 중심으로-)

  • Choi, Do-Won;Lee, Heon-Woo;Lee, Hyun-Seok
    • Cartoon and Animation Studies
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    • s.36
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    • pp.167-187
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    • 2014
  • Animation-related films and game industries have been expanding their markets rapidly responding to sharply increasing public demand. The production processes of major studios are getting more and more specialized and detailed. Therefore, they feel burden to manage and maintain as the HR and physical sizes are getting greater. So, independent studios which perform partial processes of the works are increasing over North America and Europe. Specialized studios build previous functions and related business models. They are expanding their areas. Therefore, this study targeted studios specialized in digital concept art in free production step. The characteristics of such studios were analyzed. To this end, first definitions of digital concept art concepts and functional & artistic features of entire production, and their application to business were deliberated through documents and online. Based on the results, the features of 'concept art service', 'self-brand business/ communication', and 'education service' were drawn. Second, based on it, targeting three con cept art studios such as Atomhawk (UK), FengZhu Design (Singapore), and Studio Gage (Korea), case research was done. Comparative analysis for the cases was conducted. It turned out that concept art studio s lead new market demand through active business strategies such as related contents development, marketing, etc. based on specialization. This research is significant to understand global trend of newly establishing specialized studios market and suggest reference data to improve prospective domestic specialized studios competitiveness.

Design of a Prototype System for Graft-Taking Enhancement of Grafted Seedlings Using Artificial Lighting - Effect of air current speed on the distribution of air temperature and relative humidity in a graft-taking enhancement system (인공광을 이용한 접목표 활착촉진 시스템의 시작품 설계 - 활착촉진 시스템 내의 기온과 상대습도 분포에 미치는 기류속도의 효과)

  • 김용현
    • Journal of Biosystems Engineering
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    • v.25 no.3
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    • pp.213-220
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    • 2000
  • Grafting of fruit-bearing vegetables has been widely used to increase the resistance to soil-borne diseases, to increase the tolerance to low temperature or to soil salinity, to increase the plant vigor, and to extend the duration of economic harvest time. After grafting, it is important to control the environment around grafted seedlings for the robust joining of a scion and rootstock. Usually the shading materials and plastic films are used to keep the high relative humidity and low light intensity in greenhouse or tunnel. It is quite difficult to optimally control the environment for healing and acclimation of grafted seedlings under natural light. So the farmers or growers rely on their experience for the production of grafted seedling with high quality. If artificial light is used as a lighting source for graft-taking of grafted seedlings, the light intensity and photoperiod can be easily controlled. The purpose of this study was to develop a prototype system for the graft-taking enhancement of grafted seedlings using artificial lighting and to investigate the effect of air current speed on the distribution of air temperature and relative humidity in a graft-taking enhancement system. A prototype graft-taking system was consisted by polyurethane panels, air-conditioning unit, system controller and lighting unit. Three band fluorescent lamps (FL20SEX-D/18, Kumho Electric, Inc.) were used as a lighting source. Anemometer (Climomaster 6521, KANOMAX), T-type thermocouples and humidity sensors (CHS-UPS, TDK) were used to measure the air current speed, air temperature and relative humidity in a graft-taking system. In this system, air flow acted as a driving force for the diffusion of heat and water vapor. Air current speed, air temperature and relative humidity controlled by a programmable logic controller (UP750, Yokogawa Electric Co) and an inverter (MOSCON-G3, SAMSUNG) had an even distribution. Distribution of air temperature and relative humidity in a graft-taking enhancement system was fairly affected by air current speed. Air current speed higher than 0.1m/s was required to obtain the even distribution of environmental factors in this system. At low air current speed of 0.1m/s, the evapotranspiration rate of grafted seedlings would be suppressed and thus graft-taking would be enhanced. This system could be used to investigate the effects of air temperature, relative humidity, air current speed and light intensity on the evaportranspiration rate of grafted seedlings.

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