• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• Nuclear Engineering and Technology
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• 제55권11호
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• pp.3935-3939
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• 2023

The paper presents the results of a study of radioactive noble gases and from decay products in the atmosphere of the reactor hall of the research nuclear reactor IVV-2M. The distribution of short-lived ⁸⁸Rb and ¹³⁸Cs activity by sizes of aerosol particles was measured in the range of 0.5-1000 nm. It is shown that radioactive aerosols are characterized by three main modes with AMTD 2-3 nm, 7-15 nm and 400 nm. About 70% of aerosol activity is due to ⁸⁸Rb. The equilibrium factor between ⁸⁸Kr and ⁸⁸Rb is 0.2 ± 0.1. The total concentration of aerosols particles was measured using an aerosol diffusion spectrometer. The value of unattached fraction of radioactive aerosols in the atmosphere of reactor hall IVV2M was f = 0.15-0.25 at the average total aerosol particles concentration from 20,000 cm³ to 53,000 cm³.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• 한국철도학회논문집
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• 제19권2호
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• pp.204-212
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• 2016

국내 궤도 흙노반재료의 선정기준은 기초물성 값(입경, 200번체 통과량($P_{200}$), 4번체 통과량($P_4$), 균등계수($C_u$), 곡률계수($C_c$)등)을 이용하는 통일분류법에 의존하고 있으며, 선정된 궤도노반의 현장 다짐도는 들밀도 시험 및 반복평판재하시험 결과 $E_{v2}$에 의해 파악한다. 그러나 궤도노반의 변형 및 안정성에 미치는 가장 큰 영향요소는 강성(Stiffness)이므로, 노반재료의 분류특성은 기초물성 값 자체 보다는 다짐 후 변형계수를 활용하는 것이 보다 정확하다고 할 수 있다. 본 연구에서는 궤도노반에 사용되는 국내 대표적인 흙 재료의 기초물성과 현장시험에 의한 변형계수($E_{v2}$, $E_{vd}$)와의 상관식을 도출하였다. 이와 같은 상관특성은 성능설계를 위한 국내 고유의 철도궤도용 전용흙분류기준수립을 위한 근거로 사용될 수 있다.

• Animal Bioscience
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• 제36권1호
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• pp.43-52
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• 2023

Objective: This study aimed to examine the influence of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection on pregnancy in cytokeratin-18 (K18)-hACE2 transgenic mice. Methods: To determine the expression of hACE2 mRNA in the female reproductive tract of K18-hACE2 mice, real-time polymerase chain reaction (RT-PCR) was performed using the ovary, oviduct, uterus, umbilical cord, and placenta. SARS-CoV-2 was inoculated intranasally (30 μL/mouse, 1×10⁴ TCID₅₀/mL) to plug-checked K18-hACE2 homozygous female mice at the pre-and post-implantation stages at 2.5 days post-coitum (dpc) and 15.5 dpc, respectively. The number of implantation sites was checked at 7.5 dpc, and the number of normally born pups was investigated at 20.5 dpc. Pregnancy outcomes, including implantation and childbirth, were confirmed by comparison with the non-infected group. Tissues of infected mice were collected at 7.5 dpc and 19.5 dpc to confirm the SARS-CoV-2 infection. The infection was identified by performing RT-PCR on the infected tissues and comparing them to the non-infected tissues. Results: hACE2 mRNA expression was confirmed in the female reproductive tract of the K18-hACE2 mice. Compared to the non-infected group, no significant difference in the number of implantation sites or normally born pups was found in the infected group. SARS-CoV-2 infection was detected in the lungs but not in the female reproductive system of infected K18-hACE2 mice. Conclusion: In K18-hACE2 mice, intranasal infection with SARS-CoV-2 did not induce implantation failure, preterm labor, or miscarriage. Although the viral infection was not detected in the uterus, placenta, or fetus, the infection of the lungs could induce problems in the reproductive system. However, lung infections were not related to pregnancy outcomes.

• 한국가금학회지
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• 제35권4호
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• pp.361-366
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• 2009

본 연구는 한국재래닭의 유전적 특성과 차별성을 검증하기 위하여 microsatellite(MS) marker를 이용한 타품종들과의 유전적 유연 관계를 분석하였다. 분석을 위해 7개 계통의 닭 317수(백색레그혼: 79, 로드아일랜드레드: 40, 코니쉬: 37, 적갈재래닭: 44, 황갈재래닭: 39, 흑색재래닭: 39, 오골계: 39)를 대상으로 7개의 MS marker들을 이용해 대립 유전자 및 유전자형을 분석하였다. 7개의 집단간의 유전적 유연 관계를 알아보기 위해 각 MS marker별 대립 유전자의 빈도를 산출하여 이를 근거로 집단간의 유전적 거리에 대한 추정 결과 KY와 KL간의 유전적 거리는 0.074로 가장 가까운 것으로 나타났으며, KR과 KY(0.101), KR과 KL(0.173) 역시 가까운 유전적 거리를 나타내고 있음을 확인하였다. 로드아일랜드의 경우, 한국재래닭 3계통과의 유전적 거리가 평균 0.233으로 타품종에 비해 비교적 가까운 것으로 나타났다. 레그혼은 다른 모든 품종들과의 거리가 가장 먼 것으로 확인되었다. 또한, 산란종인 백색레그혼과 육용종인 코니쉬 간의 유전적 거리는 가장 먼 것으로 확인되었다. 분석된 집단간의 유전적 구조에 따라 각 개체들이 어떻게 분포되어 있는가를 확인하기 위하여 각 개체들간의 유전적 거리를 분석하였다. 분석 결과, 백색레그혼의 경우 하나의 큰 그룹으로 분포하고 있음을 확인하였다. 또한, 로드아일랜드레드, 코니쉬 및 오골계 역시 각각 그룹을 형성하여 분포하고 있음을 확인하였다. 한국 재래닭 3계통은 각각 그룹을 이루지 못하였으며, 3계통이 합쳐져 넓게 분포하고 있음을 확인하였다. 재래닭의 경우 넓게 분포되어 있기는 하지만 다른 품종들과의 분포의 차이가 있음을 확인할 수 있었다.

• 조명전기설비학회논문지
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• 제29권3호
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• pp.81-87
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• 2015

In order to effectively protect electrical and electronic circuits which are extremely susceptible to lightning surges, multi-stage surge protection circuits are required. This paper presents the operational characteristics of the two-stage hybrid surge protection circuit in extra-low voltage DC power lines. The hybrid surge protective device consists of the gas discharge tube, transient voltage suppressor, and series inductor. The response characteristics of the proposed hybrid surge protective device to combination waves were investigated. As a result, the proposed two-stage surge protective device to combination wave provides the tight clamping level of less than 50V. The firing of the gas discharge tube to lightning surges depends on the de-coupling inductance and the rate-of-change of the current flowing through the transient voltage suppressor. The coordination between the upstream and downstream components of the hybrid surge protective device was satisfactorily achieved. The inductance of a de-coupler in surge protective circuits for low-voltage DC power lines, relative to a resistance, is sufficiently effective. The voltage drop and power loss due to the proposed surge protective device are ignored during normal operation of the systems.

• 한국전기전자재료학회논문지
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• 제16권12호
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• pp.1091-1096
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• 2003

Ion implantation in polymeric materials can induce dramatic chemical modifications, such as bond breaking, cross linking, formation of new chemical products, which have strong influences on the macroscopic properties of the materials. In this study ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate change of the optical transmittance property focusing ultraviolet ray range(200-400nm). PC was irradiated with N, Ar, Kr, Xe ions at the ion energy of 50keV and the dose range of 5 ${\times}$ 10$\^$15/, 1 ${\times}$ 10$\^$16/, 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$. FT-IR, XPS, UV/Vis transmittance spectroscopy measurement technologies were employed to obtain chemical. structural properties and optical transmittance of irradiated polymer. The original PC(unimplanted) is quite transparent that it has more than 88% transmittance in the range UV-A(320∼400nm), but after ion implantation, surface colors were changed to the dark brown and the transmittance of UV ray decreased for all implantation condition, and the absorption edge was shift to visible range with increasing mass of implanted ion species and dose.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1104-1108
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• 2004

A Study has been made of surface modification of various polymers by ion implantation to change the optical transmittance property at ultraviolet ray (UV, $200\sim400nm$). The substrates were PC (Polycarbonate), PET(Polyethyleneteraphtalate) and PP (Polypropylene). The effects of ion implantation on the change of optical transmittance were investigated in relation to ion species, implantation energies and ion fluences. The N, Ar, Kr, Xe ion implantation performed at ion energies from 20 to 50keV. The fluences ranged from $5\times10^{15}$ to $7\times10^{16}ions/cm^2$. UV/Vis transmittance spectroscopy, FT-IR and XPS were used to investigate optical transmittance, chemical structure and surface chemical state of irradiated polymer. Surface color was changed from the yellow to the dark brown and the transmittance of UV ray in the range UV-A($320\sim400nm$) decreased more than 80% after ion implantation.

• Applied Microscopy
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• 제42권4호
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.