• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2009년도 춘계 학술논문 발표대회 학계
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• pp.225-229
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• 2009

It has been found that existing detects at the junction between waterproofing layer as well as the material and the surfaces of the construction when waterproofing sheet is employed in the currently used unground structures waterproofing technology, causing a series of problems such as the high cost to the maintenance for leakage and the durability. The purpose of this study is about reducing the waterpoofing defects in underground structures. consequently, the homogeneous sheet which has some quality such as the unvulcanizate, high-adhesion and high-elastic was examined on physical properties. As a test result, it was confirmed to have satisfied performance about the ks. However, it must be continued to study through mock-up test for confirming of site application.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• E2M - 전기 전자와 첨단 소재
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• 제1권1호
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• pp.26-34
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• 1988

Sintered CdS/CdTe solar cells have been farbricated by coating a (Cd+Te) slurry on sintered CdS films followed by the sintering at 625.deg.C for one hour with various heating rates. When cadmium and tellurinm powders are used instead of CdTe powder to form CdS/CdTe junction, CdTe is formed in the temperature range of 290.deg.C-400.deg.C. The microstructure of the CdTe films depends strongly on the heating rate of the sintering due to the low melting temperature and the high vapor pressure of the elemental Cd and Te. An optimum heating rate obtain CdTe films with uniform and dense microstructure which, in turn, improves the efficiency of the sintered CdS/CdTe solar cells. All-polycrystalline CdS/CdTe solar cells with an efficiency of 9.57% under 50mW/cm$^{2}$ tungsten light have been farbricated by using a heating rate of 14.deg.C/min.

• 세라미스트
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• 제23권2호
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• pp.145-165
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• 2020

Halide perovskites are promising photovoltaic materials due to their excellent optoelectronic properties like high absorption coefficient, low exciton binding energy and long diffusion length, and single-junction solar cells consisting of them have shown a high certified efficiency of 25.2%. Despite of high efficiency, perovskite photovoltaics show poor stability under actual operational condition, which is the mostly critical obstacle for commercialization. Given that the stability of the perovskite devices is significantly affected by charge-transporting layers, the use of inorganic charge-transporting layers with better intrinsic stability than the organic counterparts must be beneficial to the enhanced device reliability. In this review article, we summarized a number of studies on the inorganic charge-transporting layers of the perovskite solar cells, especially focusing on their effects on the enhanced device reliability.

• 한국표면공학회지
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• 제29권5호
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• pp.314-324
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• 1996

Scanning probe microscopes (SPMs) such as the scanning tunneling microscope (STM) and the atomic force microscope (AFM) were used for surface modification tools at the nanometer scale. Material surfaces, i. e., titanium, hydrogen-terminated silicon and trimethylsilyl organosilane monolayer on silicon, were locally oxidized with the best lateral spatial resolution of 20nm. The principle behind this proximal probe oxidation method is scanning probe anodization, that is, the SPM tip-sample junction connected through a water column acting as a minute electrochemical cell. An SPM-nanolithogrphy process was demonstrated using the organosilane monolayer as a resist. Area-selective chemical modifications, i. e., etching, electroless plating with gold, monolayer deposition and immobilization of latex nanoparticles; were achieved in nano-scale resolution. The area-selectivity was based on the differences in chemical properties between the SPM-modified and unmodified regions.

• 한국표면공학회지
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• 제43권3호
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• pp.142-147
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• 2010

We evaluated characteristics of ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold) surface treatment for mobile equipment that requires high reliability, in addition to investigating surface treatment processes for semiconductor boards that require high reliability such as regular PCB-package systems, board-on-chip, chip-scaled package (CSP), etc and application for semiconductor package board of SIP, BOC. As a result, it appeared that ENEPIG has superior properties compared to ENIG surface treatment in corrosion resistance, solder junction, wetting, etc. We anticipate that these results will be able to lend credibility to ENEPIG as a low-cost alternative for producing mobile devices such as the cell phones, especially when applied to mass production.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.243-246
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• 2000

The sputtering systems mainly consist of the three-target holder. The target and substrate were the on-axis type. The MgO and STO substrate were used for the deposition of each layer. The optimum conditions of single-layer thin film were investigated from the SEM images and the XRD patterns. Based on the above conditions, the multi-layer thin films such as YBaCuO/LaGaO/Au/Nb and YBaCuO/Au/Nb were fabricated. The crystalline, the electrical Properties, the energy gap structure and the characteristics of the tunneling barrier on the multi-layer thin film have been investigated and characterized.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.28-28
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• 2010

Photoelectrochemical solar cells such as dye-sensitized cells (DSSCs), which exhibit high performance and are cost-effective, provide an alternative to conventional p-n junction photovoltaic devices. However, the efficiency of such cells plateaus at 11-12%, in contrast to their theoretical value of 33%. Improvements in efficiency can only occur through a fundamental understanding of the underlying physics, materials, and device designs of DSSCs. A photoelectrode consisting of semiconducting oxide nanoparticles and a transparent conducting oxide electrode (TCO) is a key component of DSSC and design of photoelectrode materials is one of promising strategies to improving energy conversion efficiency. We introduce monodisperesed $TiO_2$ nanoparticles prepared by forced hydrolysis method and their superiority as photoelectrode materials was characterized with aids of optical and electrochemical analysis. Multi-layered TCO materials are also introduced and their feasibility for use as photoelectrodes is discussed in terms of optical absorption and charge collecting properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.149.1-149.1
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• 2013

Noble metal silicides are widely used in silicon based microelectronic and optoelectronic devices. Among them, as compared to other silicides, structural and electronic properties of platinum silicide (PtSi) are found to be less sensitive to change in its dimensions. PtSi is known to overcome the junction spiking problems of Al-Si contacts. Present study is regarding the spatial evolution of platinum silicide in Pt/SiOx/Si. Scanning photoelectron emission microscopy (SPEM) was used for this purpose. SPEM images were obtained for pristine samples and after an annealing at $500^{\circ}C$ for 1 hr. Core-level spectra were recorded at different points in SPEM images contrasted by the intensity of Pt 4f7/2. Both Pt 4f and Si 2p spectra reveal the formation of PtSi after annealing. However, in contrast to earlier reports, PtSi formation is found to be non-uniform confirmed by the SPEM images and from the core level spectra taken at different intensity points.