• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.11.2-11.2
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• 2010

Photovoltaic devices are promising candidates as affordable and large-area renewable energy sources, which can replace the fossil-fuel-based resources. Especially, thin film solar cells have attracted increasing research attention, since they have a great advantage of low production cost. From the physical point of view, the photovoltaic devices can provide us interesting questions, how to enhance the light absorption and the carrier collection efficiency. A lot of approaches would be possible to address these issues. We have focused on two major topics relevant to photovoltaic device physics; (1) light management using surface plasmons and (2) junction characterizations aiming at proper interface engineering. Regarding the first topic, we have investigated the influences of Ag under-layer morphology on optical properties of ZnO thin films. The experimental results suggested that coupling between the surface plasmon polaritons at the ZnO/Ag interface and excitons in ZnO should play important roles in reflectivity of the ZnO/Ag thin films, which are widely used back reflector structures in thin film solar cells. For the second topic, we have carried out scanning probe microscopy studies of Schottky junctions consisting of photovoltaic materials. Such a research is very helpful to understand the correlation between the defects (e.g., grain boundaries) and local electrical properties. We will introduce some of the recent experimental results and discuss the physical significance.

• 한국산학기술학회논문지
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• 제18권6호
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• pp.37-43
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• 2017

본 논문에서는 고출력 전자기파 (Electromagnetic pulses, EMP) 영향에 의해 발생하는 반도체 부품의 물리적 상호작용에 대한 원리와 고장 발생 메커니즘의 연구를 위해 선행된 연구 내용을 고찰하였다. 반도체 부품에서의 전자기파 전이 과정은 3층 (공기/유전체/도체) 구조로 설명할 수 있으며, 복소반사계수에 의하여 이론적으로 흡수되는 에너지를 예상할 수 있다. 반도체 부품에 전달된 과도한 고출력 전자기파로 인한 반도체 부품의 주요 고장 원인은 전자기파 커플링에 의한 부품 소재의 줄 열에너지의 발생이다. 전기장에 의한 유전가열과 자기장에 의한 맴돌이손실에 의해 반도체 칩의 P-N 접합 파괴, 회로패턴의 burn-out과 리드 프레임과 칩을 연결하는 와이어의 손상 등이 발생한다. 즉, 반도체 부품에 전달된 전자기파는 반도체 내부 물질과 상호작용을 하며, 쌍극자분극과 이온 전도도 현상이 동시에 발생하여, 칩 내부의 P-N 접합 부분에 과도한 역전압이 형성되어 P-N 접합 파괴를 유발한다. 향후 고 신뢰성을 요구하는 전기전자시스템에 대한 EMP 내성을 향상하기 위한 반도체 부품 수준의 연구가 필요하다.

• Journal of Magnetics
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• 제7권3호
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• pp.72-79
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• 2002

Local M-H loops have been measured on the free layer of a tunneling magnetoresistance (TMR) junction using the magneto-optical Kerr effect (MOKE) system, with an optical beam size of about 2 $\mu$m diameter. Tunnel junctions were deposited using the DC magnetron sputtering method in a chamber with a base pressure of 3$\times$10$^{-9}$ Torr. The relatively irregular variations of coercive force H$_c$(∼17.5 Oe) and unidirectional anisotropy field H$_{ua}$(∼7.5 Oe) in the as-deposited sample are revealed. After $200{^{\circ}C}$ annealing, He decreases to 15 Oe but H$_{ua}$ increases to 20 Oe with smooth local variations. Two-dimensional plots of H$_c$ and H$_{ua}$ show the symmetric saddle shapes with their axes aligned with the pinned layer, irrespective of the annealing field angle. This is thought to be caused by geometric effects during deposition, together with a minor annealing effect. In addition, the variation of root mean square (RMS) surface roughness reveals it to be symmetric with respect to the center of the pinned-layer axis, with the roughness of 2.5 $\AA$ near the edge and 5.8 $\AA$ at the junction center. Comparison of surface roughness with the variation of H$_{ua}$ suggests that the H$_{ua}$ variation of the free layer is well described by dipole interactions related to surface roughness. As a whole, the reversal magnetization is not uniform over the entire junction area and the macroscopic properties are governed by the average sum of local distributions.

• 한국전자파학회논문지
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• 제12권2호
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• pp.257-267
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• 2001

본 논문은 유도성 벽을 이용한 $\pi$분기형 일층구조 급전도파관 어레이 설계에 대하여 기술하고 있다. 이 구조는 복사도파관과 급전도파관을 같은 층에 위치시킴으로써 전체 구조를 일층구조로 만들었으며, 유도성 벽을 이용함으로써 하나의 도파관 창으로부터 복사도파관으로 급전부의 전력분배를 동위상. 동진폭으로 분배되도록 설계하였다. Galerkin's 모멘트법을 이용하여 유동성 벽을 포함한 다단성 급전도파관을 엄밀하게 해석하였고, 설계에 있어서 전송선로형 등가회로 기념을 이용하여 전력분배비와 반사계수를 구하였다. $\pi$결합분기기 한 단에 대해 시뮬레이션하고 그 값을 토대로 하여 실제 제작을 통해 그 타당성을 입증하였고, 한 단에 대한 설계 방법을 토대로 반복 계산에 의한 설계 주파수 3.95GHz을 중심으로 하는 8-port 어레이 급전구조를 설계하였다.

• Journal of Magnetics
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• 제9권2호
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• pp.60-64
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• 2004

In this paper calculations of magnetisation and magnetoresistance characteristics of the Spin Valve (SV) and Pseudo Spin Valve (PSV) spintronics structures are reported and compared with the experimental data. The magnetisation reversal process was analysed with respect to the Stoner- Wohlfahrt model of total surface energy in terms of uniaxial anisotropy, exchange coupling between ferromagnetic layers, unidirectional exchange anisotropy of pinned layer (modelled by exchange coupling between magnetisation of pinned layer and net magnetisation of antiferromagnetic layer with high anisotropy). The numerical simulation of the model to the experimental magnetisation data yielded the above parameters for SV and PSV structures. These parameters were used to more sophistically micromagnetic modelling tool originating from the project called Object Oriented Micromagnetic Framework. Influence of the shape anisotropy of the Magnetic Tunnelling Junction cell used in MRAM was simulated by means of micromagnetic simulations. Results were compared to those obtained from the spot Kerr measurements.

• Current Optics and Photonics
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• 제3권6호
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• pp.502-509
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• 2019

Based on the typical pixel structure and parameters of a polysilicon uncooled bolometer, the absorption rate of a polysilicon microbridge infrared detector for 10.6 ㎛ laser energy was calculated through the optical admittance method, and the thermal coupling model of a polysilicon microbridge component irradiated by far infrared laser was established based on theoretical formulas. Then a numerical simulation study was carried out by means of finite element analysis for the actual working environment. It was found that the maximum temperature and maximum stress of the microbridge component are approximately exponentially changing with the laser power of the irradiation respectively and that they increase monotonically. The highest temperature zone of the model is gradually spread by the two corners of the bridge surface that are not connected to the bridge legs, and the maximum stress acts on both sides of the junction of the microbridge legs and the substrate. The mechanism of laser-induced hard damage to polysilicon detectors is the melting damage caused by high temperature. This paper lays the foundation for the subsequent study of the interference mechanism of the laser on working state polysilicon detectors.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Progress in Superconductivity
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• 제1권1호
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• pp.20-25
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• 1999

We constructed a high-$T_c$ scanning SQUID microscope (SSM) operating in the liquid nitrogen. We used a washer-type YBCO SQUID with inner and outer dimensions of $12{\mu}m$ and $36{\mu}m$, respectively, which was grown on the $SrTiO^3$ bicrystal substrate. The sample, rather than SQUID, was scanned using two stepping motors. We also developed readout electronics, stepping motor controller, and the software for system control and data display. We took images of various samples using our SSM and found that the spatial resolution is about $40{\mu}m$ and noise level is lower than $10^{-7}T/{\surd}Hz$ at 100 Hz and higher at lower frequencies. The noise level was much higher than that of a typical SQUID due to the other coupling from the electric parts. We present a simple argument on the inductive coupling between the sample and the SQUID which should be under-stood for the proper interpretation of the obtained images. By comparing the measured data with the simulation results the gap between the SQUID and the sample is estimated to be $40{\mu}m$.

• 한국정보통신학회논문지
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• 제15권10호
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• pp.2065-2071
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• 2011

본 논문에서는 마이크로스트립 선로 공진기와 입출력 단자의 결합 위치에 따른 공진기의 외적 양호도를 위상 특성을 이용하여 구하는 방법을 제시한다. 마이크로파 필터 설계에서 단자 접속 구조로 많이 이용되는 접합 선로 구조와 결합 선로 구조에 대해 단자의 위치와 선로의 폭과 간격에 따른 결과를 제시한다. 이 방법으로 정확한 $Q_e$ 값을 얻을 수 있었고, 이 결과는 결합공진기 필터 설계에 응용될 수 있다.

• 전기학회논문지P
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• 제60권4호
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• pp.167-171
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• 2011

In this paper, $2{\times}4$ microstrip patch antenna are proposed to implement K-band satellite communications. The microstrip feed line are inset into the radiation patch to match input impedance. Also the same current in each elements are excited by Kirchhoff's low. The elements distance of proposed array antenna are optimized $0.8{\lambda}_g$ to minimize a mutual coupling and maximize a gain. A power divider network are employed to distribute T-junction divider. As result, the proposed antenna get gain of 14[dBi] at 10.525[GHz].