• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.9
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• pp.807-810
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• 2001

Election Weighting Machine is used an electronic scale which has many trouble because of broken load cells. In this paper, we propose an Intelligent Diagnosis System will for an electronic weighting machine using fuzzy logic. It s purpose be detect of the load cell s trouble. The electronic circuit of system, which call junction box , will be connected resistance in a series at circuit of Wheatstone Bridge for monitoring the condition of load cells.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.3
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• pp.1-5
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• 1985

CulnSe2 single crystals were grown by the Bridgman method. The n.CulnSe2 single cry seals with a carrier concentration of 2.6$\times$1016/㎤ were obtained by a thermal treatment of the grown CulnSe2 single crystals in selenium atmosphere. The solar cell of n.CulnSe2-3M KOH+3M Na2 S+4M S junction was prepared by using n.Culnsel single crystal as a photoanode, 3M KOH+SM Nat S+4M S as Polysulfide solutions. The FF of the solar cell was 0.44 under 100 mW/cml illumination condition, and the conversion efficiency was 5.67%.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.25 no.4
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• pp.300-311
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• 2022

Purpose: Dysphagia, vomiting and feeding difficulties are common symptoms, with which children present. Esophageal function testing with high resolution manometry can help in diagnosing and treating these patients. We aim to access the clinical utility of high-resolution manometry of esophagus in symptomatic pediatric patients. Methods: A retrospective chart review was done on all symptomatic patients who underwent esophageal high-resolution manometry between 2010 and 2019 at Sydney Children's Hospital, Australia. Manometry results were categorized based on Chicago classification. Demographic data, indication of procedure, manometric findings, and details of treatment changes were obtained and analyzed. Results: There were 62 patients with median age of 10 years (9 months-18 years). The main indication for the procedure was dysphagia (56%). Thirty-two percent of patients had a co-morbid condition, with esophageal atresia accounting for 16%. The majority (77%) of patients had abnormal manometry which included, ineffective esophageal motility in 45.2%. In esophageal atresia cohort, esophageal pressurization was seen in 50%, aperistalsis in 40% and 10% with prior fundoplication had esophago-gastric junction obstruction. Patients with esophago-gastric junction obstruction or achalasia were treated by either pneumatic dilation or Heller's myotomy. Patients with ineffective esophageal motility and rumination were treated with a trial of prokinetics/dietary texture modification and diaphragmatic breathing. Conclusion: Esophageal high-resolution manometry has a role in the evaluation of symptomatic pediatric patients. The majority of our patients had abnormal results which led to change in treatments, with either medication, surgery and/or feeding modification with resultant improvement in symptoms.

• Nuclear Engineering and Technology
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• v.31 no.3
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• pp.267-275
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• 1999

This paper deals with the industrial problem of thermal striping damage on the French prototype fast breeder reactor, Phenix and it was studied in coordination with the research program of IAEA. The thermomechanical and fracture mechanics evaluation procedure of thermal striping damage on the tee-junction of the secondary piping using Green's function method and standard FEM is presented. The thermohydraulic(T/H) loading condition used in the present analysis is the random type thermal loads computed by T/H analysis on the turbulent mixing of the two flows with different temperatures. The thermomechanical fatigue damage was evaluated according to ASME code section 111 subsection NH. The results of the fatigue analysis showed that fatigue failure would occur at the welded joint within 90,000 hours of operation. The assessment for the fracture behavior of the welded joint showed that the crack would be initiated at an early stage in the operation. It took 42,698.9 hours for the crack to propagate up to 5 mm along the thickness direction. After then, however, the instability analysis, using tearing modulus, showed that the crack would be arrested, which was in agreement with the actual observation of the crack. An efficient analysis procedure using Green's function approach for the crack propagation problem under random type load was proposed in this study. The analysis results showed good agreement with those of the practical observations.

• Journal of Gastric Cancer
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• v.15 no.2
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• pp.147-150
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• 2015

Gastric volvulus is an uncommon clinical entity. There are three types of gastric volvulus; organoaxial, mesenteroaxial and combined type. This condition can lead to a closed-loop obstruction or strangulation. Traditional surgical therapy for gastric volvulus is based on an open approach. Here we report a successful case of a patient with chronic gastric volvulus with a laparoscopic treatment. A 79-year-old woman came to the emergency department with epigastric pain accompanied by nausea for 2 weeks. Abdominal computed tomography revealed markedly distended stomach with transposition of gastroesophageal Junction and gastric antrum. Barium meal study revealed presence of the antrum was folded over 180 degrees that was located above gastroesophageal junction. We attempted an endoscopic reduction, but it was unsuccessful. The patient got laparoscopic anterior gastropexy. Based on our result, laparoscopic gastropexy can be considered as a good choice of the treatment for gastric volvulus.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.56-59
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• 2000

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.49-51
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• 2002

In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.