Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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$n.cuInSe_2$-Polysulfide Solar Cells

$n.cuInSe_2$-Polysulfide Junction의 태양전지에 관한 연구

  • Published : 1985.05.01
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Abstract

CulnSe2 single crystals were grown by the Bridgman method. The n.CulnSe2 single cry seals with a carrier concentration of 2.6$\times$1016/㎤ were obtained by a thermal treatment of the grown CulnSe2 single crystals in selenium atmosphere. The solar cell of n.CulnSe2-3M KOH+3M Na2 S+4M S junction was prepared by using n.Culnsel single crystal as a photoanode, 3M KOH+SM Nat S+4M S as Polysulfide solutions. The FF of the solar cell was 0.44 under 100 mW/cml illumination condition, and the conversion efficiency was 5.67%.

Bridgnan방법으로 성장시킨 CuInse2단결정을 Se분위기 속에서 열처리하여 carrier농도가 2.6×1016/㎤인 n·Culnse2단결정을 얻었다. 이 단결정을 photoanode로 하고 polysulfide용액으로 3M KOH+3M Na2S+4M S를 사용하여 n·Culnsel-3M KOH+3M Na2S+4M S접합의 태양전지를 만들었다. 이 태양전지는 태양에너지 100mW/㎤의 조건하에서 FF=0.44이며, 태양에너지 변환효율은 5.67% 이었다.

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