• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.101-104
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• 2018

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ generation glass substrate.

• 한국표면공학회지
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• 제46권4호
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• pp.162-167
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• 2013

Encapsulation is required since organic materials used in OLED devices are fragile to water vapor and oxygen. Laser sealing method is currently used where IR laser is scanned along the glass-frit coated lines. Laser method is, however, not suitable to encapsulating large-sized glass substrate due to the nature of sequential scanning. In this work we propose a new method of encapsulation using Joule heating. Conductive layer is patterned along the sealing lines on which the glass frit is screen printed and sintered. Electric field is then applied to the conductive layer resulting in bonding both the panel glass and the encapsulation glass by melting glass-frit. In order to obtain uniform bonding the temperature of a conductive layer having a shape of closed loop should be uniform. In this work we conducted simulation for heat distribution according to the structure of a conductive layer used as a Joule-heat source. Uniform temperature was obtained with an error of 5% by optimizing the structure of a conductive layer. Based on the results of thermal simulations we concluded that Joule-heating induced encapsulation would be a good candidate for encapsulation method especially for large area glass substrate.

• 한국식품영양과학회지
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• 제43권10호
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• pp.1619-1626
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• 2014

마리네이드, 간장소스, 된장소스 및 고추장소스를 대상으로 총균수 및 Bacillus cereus 접종포자에 대해 초고압, 줄가열, 항균물질에 단독처리나 hurdle 복합처리에 의한 저감효과를 분석하였다. 줄가열 처리는 된장 및 고추장소스의 총균과 접종포자에 대해서 1.0~2.0 log 범위의 저감효과를 나타내었다. 한편 J($85^{\circ}C$), A(EtOH 3.0%) 및 P(550 Mpa, 5분)를 허들로 설정하였을 경우 된장소스의 총균수는 JA 처리구가 0.35 log, JP 처리구가 0.92 log 및 JAP 처리구가 1.21 log 감소하였고, 고추장소스의 총균수는 JA 처리구가 1.26 log, JP 처리구가 1.7 log 및 JAP 처리구가 1.47 log 감소하였다. 포자의 경우 된장소스는 AP 처리구가 0.50 log, JP와 JAP 처리구는 각각 1.42 log 및 1.38 log로 감소 효과가 증가하였고, 고추장소스는 AP 처리구가 0.47 log, JA 처리구가 3.3 log, JP와 JAP 처리구가 모두 3.45 log만큼 크게 감소하였다. 상기 소스의 총균과 포자에 대한 처리구는 $30^{\circ}C$에서 8주간 저장 시 대조구 대비 유사하거나 낮은 수준을 유지하였다. 따라서 소스류 중에서 고추장소스와 된장소스는 줄가열과 초고압을 연계한 허들처리를 통해 총균수와 B. cereus 포자를 제어할 수 있을 것으로 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.378-381
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• 2009

As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the $2^{nd}$ and the $4^{th}$ generation glass substrate.

• 센서학회지
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• 제32권6호
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.677-678
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• 2007

• 센서학회지
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• 제22권1호
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• pp.89-94
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• 2013

In this paper, we developed a beam of MEMS probe card using a BeCu sheet. Silicon wafer thickness of $400{\mu}m$ was fabricated by using deep reactive ion etching (RIE) process. After forming through silicon via (TSV), the silicon wafer was bonded with BeCu sheet by soldering process. We made BeCu beam stress-free owing to removing internal stress by using joule heating. BeCu beam was fused by using joule heating caused by high current. The fabricated BeCu beam measured length of 1.75 mm and width of 0.44 mm, and thickness of $15{\mu}m$. We measured fusing current as a function of the cutting planes. Maximum current was 5.98 A at cutting plane of $150{\mu}m^2$. The proposed low-cost and simple fabrication process is applicable for producing MEMS probe beam.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.78-83
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• 2002

Since the KSTAR superconducting magnet structure should be maintained at a cryogenic temperature of about 4 K, even a small amount of heat might be a major cause of the temperature rise of the structure. The Joule heating by eddy currents induced in the magnet structure during the KSTAR operation was found to be a critical parameter for designing the cooling scheme of the magnet structure as well as defining the requirements of the refrigerator for the cryogenic system. Based on the Joule heating calculation, it was revealed that the bulk temperature rise of the magnet coil structure was less than 1 K. The local maximum temperature especially at the inboard leg of the TF coil structure increased as high as about 21 K for the plasma vertical disruption scenario. For the CS coil structure, the maximum temperature was obtained from the PF fast discharging scenario. This means that the vertical disruption and PF fast discharging scenarios are the major scenarios for the design of TF and CS coil structures, respectively. For the reference scenario, the location of maximum temperature spot changes according to the transient current variation of each PF coil.

• 동력기계공학회지
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• 제7권4호
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• pp.31-37
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• 2003

This paper is a study on application of warm air circulator by using the carbon heating element with particle type. The main variables are the input current and amount of carbon heating source for experimental characteristics. The experimental results are obtained as follows. As the input current and temperature are increased, the resistance of heat source is decreased about $20{\sim}25%$ by the effect of negative resistance. As the amount of heating source is small, Joule heat is large with the input current. When the amount of heating source is 300 and the input current is 15A, the value of Joule heat is about 4604.6kJ/h. The heat production efficiency of carbon heating source is larger about 10% than the sheath heater.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집B
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• pp.106-111
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• 2001

This paper is a study on the heat generation characteristics of the carbon heating source with high temperature. The main variables of this study are the input current and the amount of carbon heating source. As the results of the experiment in the waste rate of carbon heating source. The case of carbon heating source 300g was large than 500g. As the input current and the temperature are increased, the resistance values of carbon heating source were large. The Joule heat was represented the large value as the amount of heating source decrease with the input current. Finally, the heating source was represented the electrical steady state as the input current is increase.