• Publications of The Korean Astronomical Society
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• v.30 no.2
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• pp.687-690
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• 2015

For research and development of Silicon Carbide (SiC) mirrors, the Korea Astronomy and Space Science Institute (KASI) and National Optical Astronomy Observatory (NOAO) have agreed to cooperate and share on polishing and measuring facilities, experience and human resources for two years (2014-2015). The main goals of the SiC mirror polishing are to achieve optical surface figures of less than 20 nm rms and optical surface roughness of less than 2 nm rms. In addition, Green Optics Co., Ltd (GO) has been interested in the SiC polishing and joined the partnership with KASI. KASI will be involved in the development of the SiC polishing and the optical surface measurement using three different kinds of SiC materials and manufacturing processes (POCO$^{TM}$, CoorsTek$^{TM}$ and SSG$^{TM}$ corporations) provided by NOAO. GO will polish the SiC substrate within requirements. Additionally, the requirements of the optical surface imperfections are given as: less than 40 um scratch and 500 um dig. In this paper, we introduce the international collaboration and interim results for SiC mirror polishing and development.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.2
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• pp.40.3-41
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• 2015

We performed simultaneous observations of H2O and SiO masers toward VX Sgr using the Korean VLBI Network (KVN) and Source Frequency Phase Referencing (SFPR) method. The observations were carried out at 5 epochs from 2014 February to 2015 June. The relative locations of the SiO with respect to the H2O maser emission were determined at two epochs by SFPR for the first time. The H2O masers show well developed asymmetric outflow features which are spread up to ~300 mas in diameter. On the other hand, the SiO masers show a ring-like structure close to the central star with ~ 30 mas diameter. The SFPR observational results at two epochs (${\varphi}=0.83$ and 0.99) provide similar relative locations of H2O and SiO maser features. These superposed maps of H2O and SiO masers lead us to investigate the development of outflow motions from relatively spherical SiO maser regions close to central star to aspherical H2O maser regions according to optical phase of stellar pulsation together with the prediction of the position of central star.

• Proceedings of the PSK Conference
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• 2003.10b
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• pp.243.1-243.1
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• 2003

The pharmacokinetics of eupatilin (an active components of Stillen, a new antigastritic agent) were investigated using UV-HPLC method. The quantitation limit of eupatilin was 10 ng/ml in plasma. After intravenous administration of eupatiln, 30 mg/kg to rats, the plasma concentrations of unchanged eupatilin declined rapidly with the mean terminal half-life of 0.101 hr. Total body clearance was 121 ml/min/kg, and fractions of dose excreted in urine and feces for 24 hr were only 2.5% and 0.919%, respectively. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.340.2-340.2
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• 2014

최근 비정질 산화물 반도체는 가시광 영역에서의 투명도와 낮은 공정 온도, 그리고 높은 Field-effect mobility로 인해 Thin film transistors의 Active channel layer의 재료로 각광 받고 있다. ZnO, IZO, IGO, ITGO등의 많은 산화물 반도체들이 TFT의 채널층으로의 적용을 위해 활발히 연구되고 있으며, 특히 비정질 IGZO는 비정질임에도 불구하고 Mobility가 $10cm^2/Vs$ 정도로 기존의 a-Si:H 보다 높은 Mobility 특성을 나타내고 있어 대화면 디스플레이와 고속 구동을 위한 LCD에 적용 할 수 있으며 또한 낮은 공정 온도로 인해 플렉서블 디스플레이에 응용될 수 있다는 장점이 있다. 우리는 RF magnetron sputtering법으로 증착한 비정질 IGZO TFT(Thin Film Transistors)의 전기적 특성과 IGZO 박막의 특성에 미치는 RF power의 영향을 연구하였다. 제작한 TFTs의 Active channel layer는 산소분압 1%, Room temperature에서 RF power별(50~150 W)로 Si wafer 기판 위에 30nm로 증착 하였고 100 nm의 $SiO_2$가 절연체로 사용되었다. 또한 박막 특성을 분석하기 위해 같은 Chamber 분위기에서 100 nm로 IGZO 박막을 증착하였다. 비정질 IGZO 박막의 X-ray reflectivity(XRR)을 분석한 결과 RF Power가 50 W에서 150 W로 증가 할수록 박막의 Roughness는 22.7 (${\AA}$)에서 6.5 (${\AA}$)로 감소하고 Density는 5.9 ($g/cm^3$)에서 6.1 ($g/cm^3$)까지 증가하는 경향을 보였다. 또한 제작한 IGZO TFTs는 증착 RF Power가 증가함에 따라 Threshold voltage (VTH)가 0.3~4(V)로 증가하는 경향을 나타내고 Filed-effect mobility도 6.2~19 ($cm^2/Vs$)까지 증가하는 경향을 보인다. 또한 on/off ratio는 모두 > $10^6$의 값을 나타내며 subthreshold slope (SS)는 0.3~0.8 (V/decade)의 값을 나타낸다.

• Journal of Powder Materials
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• v.21 no.6
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• pp.460-466
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• 2014

Al-Si-SiC composite powders with intra-granular SiC particles were prepared by a gas atomization process. The composite powders were mixed with Al-Zn-Mg alloy powders as a function of weight percent. Those mixture powders were compacted with the pressure of 700 MPa and then sintered at the temperature of $565-585^{\circ}C$. T6 heat treatment was conducted to increase their mechanical properties by solid-solution precipitates. Each relative density according to the optimized sintering temperature of those powders were determined as 96% at $580^{\circ}C$ for Al-Zn-Mg powders (composition A), 97.9% at $575^{\circ}C$ for Al-Zn-Mg powders with 5 wt.% of Al-Si-SiC powders (composition B), and 98.2% at $570^{\circ}C$ for Al-Zn-Mg powders with 10 wt.% of Al-Si-SiC powders (composition C), respectively. Each hardness, tensile strength, and wear resistance test of those sintered samples was conducted. As the content of Al-Si-SiC powders increased, both hardness and tensile strength were decreased. However, wear resistance was increased by the increase of Al-Si-SiC powders. From these results, it was confirmed that Al-Si-SiC/Al-Zn-Mg composite could be highly densified by the sintering process, and thus the composite could have high wear resistance and tensile strength when the content of Al-Si-SiC composite powders were optimized.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.1
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• pp.43.1-43.1
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• 2016

With the Korean VLBI Network (KVN), both single dish and VLBI monitoring observations of H2O and SiO masers were performed toward the semi-regular variable star R Crateris. In the case of 11 VLBI monitoring observations from Jan. 5, 2014 to Jan. 7, 2016, successful superposed maps of H2O and SiO masers were obtained at 7 epochs by adopting the Source Frequency Phase Referencing (SFPR) method. These results enable us to investigate the development of outflow and asymmetric motions from SiO maser to H2O maser regions according to stellar pulsation which are closely related with a mass-loss process. Single dish monitoring observations of H2O and SiO masers were also carried out from 2009 June to 2016 Feb. Intensity variations between H2O and SiO masers were investigated according to stellar optical phases together with peak velocity variations with respect to the stellar velocity. We will compare the VLBI results among different maser transitions with those of single dish.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.232-233
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• 2008

The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1298-1300
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• 2007

The interface between SiNx and ZnO was investigated with Near Edge X-ray Absorption Fine Structure (NEXAFS) for ZnO based thin film transistor (TFT) applications. Impurity species were interstitial $N_2$ molecules at the SiNx / ZnO interface. The evolution of $N_2$ is decreased with increasing of anneal temperature.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1198-1199
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• 2006

Type I clathrate $Ba_8Al_{16}Si_{30}$ was produced by arc melting and hot pressing and thermoelectric properties were investigated. Negative Seebeck coefficient at all temperatures measured, which means that the majority carriers are electrons. Electrical conductivity decreased by increasing temperature and thermal conductivity was 0.012 W/cmK at room temperature and dimensionless thermoelectric figure of merit (ZT) was 0.01 at 873K.