• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.755-759
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• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 제16회 정기총회 및 동계학술발표회
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• pp.176-177
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• 2005

• Journal of Microbiology and Biotechnology
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• 제16권12호
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• pp.1990-1994
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• 2006

Fusarium proliferatum KGL0401 was previously isolated from Physalis alkekengi var. francheti plant roots and exhibited a high GA productivity. A gas chromatography-mass spectrometry (GC-MS) analysis of extracts of the culture fluid of F proliferatum KGL0401 also revealed the presence of $GA_1$, $GA_3$, $GA_4$, $GA_7$, $GA_{20}$, and $GA_{24}$. Therefore, the present study conducted a proteome analysis of waito-c rice treated with the culture fluid of the isolated F proliferatum KGL0401 to identify the protein expression triggered by the GA-containing culture fluid. The results revealed the overexpression of 180 protein spots in the sample treated with the culture fluid. Among them, 75 induced proteins were selected and analyzed by MALDI-TOF (matrix-assisted laser desorption-iorrization time-of-flight) mass spectrometry, followed by database searching, and 51 proteins were identified.

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.289-290
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• 2007

We have theoretically derived a electrical model and extracted a parasitic parameters of leakage current in InGaN/GaN light emitting diodes (LEDs). The parasitic parameters of our LED are $R_p=10^{10}{\Omega}$, $I_{0,2}=10^{-17}A$ and $n_2=3.6$, which provide information of leakage current.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 하계학술발표회
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• pp.212-213
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• 2005

• 한국항해학회지
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• 제15권3호
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• pp.99-106
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• 1991

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.

• 한국재료학회지
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• 제12권6호
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• pp.476-481
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• 2002

In this work, we report on the synthesis of the GaN powders from gallium oxide hydroxide (GaOOH) powders and on the structural and optical properties of them. Simple heat treatment of GaOOH in the flow of $NH_3$ gas leads to the formation of submicron hexagonal GaN powders even at the low reaction temperature of $800^{\circ}C$. XRD measurements show that the powders obtained are the single phase GaN. EDS, FTIR, and PL measurements indicate the oxygen-associated characteristics. It is shown from the low temperature PL measurement on GaN powders synthesized at $1000^{\circ}C$ that the shallow donor-acceptor recombination induced emission is more intense than the near band-edge excitonic emission.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.317-319
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• 1997

We have studied the properties of $GaAs_{1-x}P_x$ epitaxial films on the GaP using VPE method by CVD. The surface carrier concentration and PL power increased with increasing the epitaxial temperature while PL wave length decreased. The Power out of the LED with $GaAs_{1-x}P_x$/GaP structure decreased with increasing the epitaxial temperature while the forward voltage of the LED increased. Specially, The LED of $GaAs_{1-x}P_x$/GaP structure represents good electrical and optical properties when the $GaAs_{1-x}P_x$ layer was epitaxially grown at $810^{\circ}C$.

• 한국광학회:학술대회논문집
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• 한국광학회 2005년도 제16회 정기총회 및 동계학술발표회
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• pp.290-291
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• 2005

We have presented a comprehensive effective-mass Hamiltonian for strained Wurtzite semiconductors using k${\cdot}$p method and Kane's model. This theoretical groundwork provides a foundation for investigating the electrical and optical properties of wurtzite strained quantum-well lasers.

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 하계학술발표회 논문집
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• pp.177-178
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• 2006