• 대한생식의학회:학술대회논문집
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• 2001.06a
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• pp.54-55
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• 2001

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.

• Journal of the Korea Society of Computer and Information
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• v.17 no.11
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• pp.189-196
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• 2012

This paper proposes Swap algorithm for solving Dynamic Economic Dispatch (DED) problem. The proposed algorithm initially balances total load demand $P_d$ with total generation ${\Sigma}P_i$ by deactivating a generator with the highest unit generation cost $C_i^{max}/P_i^{max}$. It then swaps generation level $P_i=P_i{\pm}{\Delta}$, (${\Delta}$=1.0, 0.1, 0.01, 0.001) for $P_i=P_i-{\Delta}$, $P_j=P_j+{\Delta}$ provided that $_{max}[F(P_i)-F(P_i-{\Delta})]$ > $_{min}[F(P_j+{\Delta})-F(P_j)]$, $i{\neq}j$. This new algorithm is applied and tested to the experimental data of Dynamic Economic Dispatch problem, demonstrating a considerable reduction in the prevalent heuristic algorithm's optimal generation cost and in the maximization of economic profit.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.481-482
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• 2012

• Communications of the Korean Mathematical Society
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• v.20 no.2
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• pp.275-290
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• 2005

Let $S\;=\;R[\chi_{ij}\mid1\;{\le}\;i\;{\le}\;m,\;1\;{\le}\;j\;{\le}\;n]$ be the polynomial ring over a noetherian commutative ring R and $I_p$ be the determinantal ideal generated by the $p\;\times\;p$ minors of the generic matrix $(\chi_{ij})(1{\le}P{\le}min(m,n))$. We describe a minimal free resolution of $S/I_{p}$, in the case m = n = p + 2 over $\mathbb{Z}$.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.16-19
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• 2000

DC and low frequency noise characteristics of InGaP/InGaAs pseudomorphic HEMTs (p-HEMTs) grown by compound source MBE are investigated for temperature range of 150K to 370K. Equivalent input noise spectra( $S_{iv}$ ) were measured as a function of frequency and temperature. $S_{iv}$ was measured to be 3.4 $\times$ 10$^{-12}$ $V^2$/ Hz at 1kHz for 1.3 X 50${\mu}{\textrm}{m}$$^2$InGaP/InGaAs p-HEMT at room temperature. Measurements of the low-frequency noise spectra of the p-HEMT as a function of temperature show that the trap with an activation energy level around 0.589 eV is a dominant trap that accounts for the low-frequency noise behavior of the device. The normalized extrinsic gm frequency dispersion of the p-HEMT. was as low as 2.5％ at room temperature, indicating that the device has well-behaved low-frequency noise characteristics. Sub-micron (0.25 $\times$ 50${\mu}{\textrm}{m}$$^2$) gate p-HEMT showed $f_{T}$ and $f_{max}$ of 40GHz and 108GHz, respectively.y.y.

• Journal of the Korean Mathematical Society
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• v.59 no.3
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• pp.621-634
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• 2022

The scaled inverse of a nonzero element a(x) ∈ ℤ[x]/f(x), where f(x) is an irreducible polynomial over ℤ, is the element b(x) ∈ ℤ[x]/f(x) such that a(x)b(x) = c (mod f(x)) for the smallest possible positive integer scale c. In this paper, we investigate the scaled inverse of (xⁱ - x^j) modulo cyclotomic polynomial of the form Φ_p^s (x) or Φ_p^sq^t (x), where p, q are primes with p < q and s, t are positive integers. Our main results are that the coefficient size of the scaled inverse of (xⁱ - x^j) is bounded by p - 1 with the scale p modulo Φ_p^s (x), and is bounded by q - 1 with the scale not greater than q modulo Φ_p^sq^t (x). Previously, the analogous result on cyclotomic polynomials of the form Φ_2ⁿ (x) gave rise to many lattice-based cryptosystems, especially, zero-knowledge proofs. Our result provides more flexible choice of cyclotomic polynomials in such cryptosystems. Along the way of proving the theorems, we also prove several properties of {x^k}_k∈ℤ in ℤ[x]/Φ_pq(x) which might be of independent interest.

• 제어로봇시스템학회:학술대회논문집
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• 1994.10a
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• pp.49-53
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• 1994

Advanced Real-Time Satellite Simulator(ARTSS) has been developed to support the telemetry, tracking and command operations of the ETRI satellite control system and to provide satellite engineers a more powerful and informative satellite simulations tool on the desktop. To provide extensive simulation functions for a communication satellite system in the pre-operational and operational missions, ARTSS uses a geosynchronous orbit(GEO) satellite model consisting of the attitude and orbit control subsystem, the power subsystem, the thermal subsystem, the telemetry, command and ranging subsystem, and the communications payload subsystem. In this paper, the system features and functions are presented and the satellite subsystem models are explained in detail.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.915-916
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• 2009

• Proceedings of the PSK Conference
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• 2000.04a
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• pp.176.1-176.1
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• 2000