• Title/Summary/Keyword: J-V characteristics

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Characterization of Si/Mo Multilayer Anode for Microbattery (박막전지용 Si/Mo 다층박막 음극의 전기화학적 특성)

  • 이기령;정주영;문희수;이승원;이유기;박종완
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.209-209
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    • 2003
  • The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

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A Study on the Characteristics of HTS Cable System Operation and Cooling Load in a Load Unbalance (불평형 부하에서의 초전도케이블 운전 및 냉각부하 특성에 관한 연구)

  • Sohn, S.H.;Lim, J.H.;Yang, H.S.;Choi, H.O.;Ma, Y.H.;Kim, D.L.;Ryoo, H.S.;Ryu, K.W.;Hwang, S.D.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.397_398
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    • 2009
  • Demonstrations to deploy high temperature superconducting (HTS) cable to the real gird are actively carried out throughout the world. Power utilities have an interest in the inherent advantage of the HTS cable system, and achieve the expected results from the series of verification test. To embody the reliability in the phenomenon occurred commonly in three-phase system, we simulate the load unbalance. A 22.9 kV large scale HTS cable system with the specification of 100 m-long, 50 MVA capacity has been tested with up to 30% unbalance rate. To evaluate the effect of AC loss increase due to the unbalanced load, the cooling loads are measured by the calorimetry method. In this paper, the correlation between AC loss and load unbalance is described and investigated precisely.

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Thermal characteristics of defective carbon nanotube-polymer nanocomposites

  • Unnikrishnan, V.U.;Reddy, J.N.;Banerjee, D.;Rostam-Abadi, F.
    • Interaction and multiscale mechanics
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    • v.1 no.4
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    • pp.397-409
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    • 2008
  • The interfacial thermal resistance of pristine and defective carbon nanotubes (CNTs) embedded in low-density polyethylene matrix is studied in this paper. Interface thermal resistance in nanosystems is one of the most important factors that lead to the large variation in thermal conductivities in literature and the novelty of this paper lies in the estimation of the interfacial thermal resistance for defective nanotubes-systems. Thermal properties of CNT nanostructures are estimated using molecular dynamics (MD) simulations and the simulations were carried out for various temperatures by rescaling the velocities of carbon atoms in the nanotube. This paper also deals with the mesoscale thermal conductivities of composite systems, using effective medium theories by considering the size effect in the form of interfacial thermal resistance and also using the conventional micromechanical methods like Hashin-Shtrikman bounds and Wakashima-Tsukamoto estimates.

Metal Surface Treatment Effects on Screen Printed Silicon Solar Cells

  • Chakrabarty K.;Mangalaraj D.;Kim K. H.;Dhungel S. K.;Park J. H.;Singh S. N.
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.4
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    • pp.22-25
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    • 2003
  • High series resistance due to the presence of glass frit is one of the major problems for screen printed silicon solar cells. Cells having electrical parameters below the prescribed values are usually rejected during solar module fabrication. Therefore, it is highly desirable to improve the electrical parameters of the silicon solar cells and thereby to increase the overall production yield. It was observed that, the performance of low quality mono-crystalline silicon solar cells made by standard screen printing technology could be improved remarkably by novel surface treatment. We have chemically treated the surface using sodium hydroxide (NaOH) and silver nitrate ($AgNO_3$) solutions. NaOH treatment helps to reduce the series resistance by decreasing the presence of excess glass frit on the top silver grid contact. The $AgNO_3$ treatment is used to reduce the series resistance comes from the deposition of silver on the grids by filling the holes present (if any) within the grid pattern.

Fabrication of High-T$_c$ Superconducting Josephson Junctions by Ar lon Milling and E-Beam Lithography (Ar 이온빔 식각과 전자선리소그래피 방벙으로 제작한 고온초전도 조셉슨 접합)

  • Lee, Moon-Chul;Kim, In-Seon;Lee, Jeong-O;Yoo, Kyung-Hwa;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.91-94
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    • 1999
  • A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

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Improved evaluation of ring tensile test ductility applied to neutron irradiated 42XNM tubes in the temperature range of (500-1100)℃

  • Gurovich, B.A.;Frolov, A.S.;Fedotov, I.V.
    • Nuclear Engineering and Technology
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    • v.52 no.6
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    • pp.1213-1221
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    • 2020
  • Chromium-nickel alloy 42XNM (XHM-1, Bochvalloy) is considered as a promising material for future generations of nuclear reactors, primarily as a material for the fuel elements shells in the development of accident tolerant fuel. However, as with most nickel-based alloys, 42ХNМ is characterized by a sharp decrease in plastic properties in the temperature range of (500-900)℃. This effect is enhanced by neutron irradiation. Preliminary tests of ring samples of 42XNM alloy (after irradiation as a part of the VVER-1000 control system) in the temperature range of ductility failure showed that the standard technique for processing tensile diagrams does not allow to evaluate the plastic properties correctly at low strains. Therefore, in this work, the alternative method for testing ring samples from materials with low plastic characteristics was developed. It was shown that the minimum value of the permanent strain of the irradiated 42XNM alloy in the temperature range of (500-1100)℃, determined by the alternative method, was ~1.6% at 750 ℃.

Preparation of ITO Thin Films for Display Application with $O_2$ Gas Flow Ratio and Input Current by FTS (Facing Targets Sputtering) System

  • Kim, H.W.;Keum, M.J.;Lee, K.S.;Kim, H.K.;Kim, K.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1477-1479
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    • 2005
  • In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical, optical characteristics and surface roughness of prepared ITO thin films were measured. In the results, as increasing $O_2$ gas 0.1[sccm] to 0.7[sccm], resistivity of ITO thin film was increased with a decreasing carrier concentration, $O_2$ gas over 0.3[sccm] the carrier mobility have a similarly value. Transmittance of prepared ITO thin films were improved at increasing $O_2$ gas 0.1[sccm] to 0.7[sccm]. And transmittance of all of the prepared ITO thin films was over 80%. We could obtain resistivity $6.19{\times}10^{-4}[{\omega}{\cdot}cm]$, carrier mobility $22.9[cm^2/V{\cdot}sec]$, carrier concentration $4.41{\times}10^{20}[cm^{-3}]$ and transmittance over 80% of ITO thin film prepared at working pressure 1mTorr, input current 0.4A without any substrate heating.

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Analysis of Grain Boundary Effects in Poly-Si Wafer for the Fabrication of Low Cost and High Efficiency Solar Cells (저가 고효율 태양전지 제작을 위한 다결정 실리콘 웨이퍼 결정입계 영향 분석)

  • Lee, S.E.;Lim, D.G.;Kim, H.W.;Kim, S.S.;Yi, J.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1361-1363
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    • 1998
  • Poly-Si grain boundaries act as potential barriers as well as recombination centers for the photo-generated carriers in solar cells. Thereby, grain boundaries of poly-Si are considered as a major source of the poly-Si cell efficiency was reduced This paper investigated grain boundary effect of poly-Si wafer prior to the solar cell fabrication. By comparing I-V characteristics inner grain, on and across the grain boundary, we were able to detect grain potentials. To reduce grain boundary effect we carried out pretreatment, $POCl_3$ gettering, and examined carrier lifetime. This paper focuses on resistivity variation effect due to grain boundary of poly-Si. The resistivity of the inner grain was $2.2{\Omega}-cm$, on the grain boundary$2.3{\Omega}-cm$, across the grain boundary $2.6{\Omega}-cm$. A measured resistivity varied depending on how many grains were included inside the four point probes. The resistivity increased as the number of grain boundaries increased. Our result can contribute to achieve high conversion efficiency of poly-Si solar cell by overcoming the grain boundary influence.

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Study of a Betavoltaic Battery Using Electroplated Nickel-63 on Nickel Foil as a Power Source

  • Uhm, Young Rang;Choi, Byoung Gun;Kim, Jong Bum;Jeong, Dong-Hyuk;Son, Kwang Jae
    • Nuclear Engineering and Technology
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    • v.48 no.3
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    • pp.773-777
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    • 2016
  • A betavoltaic battery was prepared using radioactive $^{63}Ni$ attached to a three-dimensional single trenched P-N absorber. The optimum thickness of a $^{63}Ni$ layer was determined to be approximately $2{\mu}m$, considering the minimum self-shielding effect of beta particles. Electroplating of radioactive $^{63}Ni$ on a nickel (Ni) foil was carried out at a current density of $20mA/cm^2$. The difference of the short-circuit currents ($I_{sc}$) between the pre- and post-deposition of $^{63}Ni$ (16.65 MBq) on the P-N junction was 5.03 nA, as obtained from the I-V characteristics. An improved design with a sandwich structure was provided for enhancing performance.

A Study on the Ultra-high Voltage Oil Filed Cable Joint (초초고압용 OF 케이블 접속함의 국산화를 위한 연구)

  • Lee, S.K.;Jeon, S.I.;Park, W.K.;Kim, W.J.;Park, Y.H.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1825-1827
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    • 1996
  • In this study, the Joint of 345kV OF $1C{\times}2000mm^2$ cable was developed to keep up with the trends that need higher-voltage & capacity underground transmission line. The type of joint developed was based on the two kinds of models that have had a good reliability internationally. The mechnic and electric characteristics of the sample specimen was managed in detail when it was manufactured and estimated. Especially, in order to prove the reliability of usage for 30 years, the method of long term aging test was studied. As a result of test, we knew that the joint developed had a good performance. From this study, it can be thought that future ultra-high voltage underground transmission line could be constructed by domestic technology.

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