• Journal of the Korean Society of Safety
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• v.28 no.5
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• pp.15-20
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• 2013

This paper dealt with melting characteristics of low-voltage miniature cartridge fuse used for 220 V electronic equipment. The experimental sample is low-voltage miniature cartridge fuse with rating of 250 V(3A) and size of $5{\times}20$ mm. In order to evaluate melting and scattering characteristics of the fuse, we applied to 8/20 ${\mu}s$ surge current, overload current and external thermal stress such as flame of fire. From the experimental results, the fuse element was melted and scattered by applied surge current(above 0.79 kA) and overload current(above 4.5 A). It was also attached to the inner surface of the fuse tube. The fuse element was attached as a thin film on inner surface of fuse tube when large surge current was applied. It was confirmed, however, the fuse element was not changed by external thermal stress such as flame and hot-air.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.30-33
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• 2003

1MVA high temperature superconducting (HTS) transformer with double pancake windings made of BSCCO-2223 HTS tapes was designed and manufactured. And prototype transformer with the same capacity was manufactured also. The each rated voltage of the HTS transformer is 22.9 kV and 6.6 kV. Four parallel BSCCO-2223 HTS tapes were wound in the double pancake windings of low voltage side. In order to distribute the currents equally in each HTS tapes, the three times transposition was performed between the double pancake windings. The windings of prototype transformer were wound using copper tape with the same size as BSCCO-2223 HTS tape. The core of the transformer was designed and manufactured as a shell type core made of laminated silicon steel plate. The several characteristics tests for the prototype transformer were performed in liquid nitrogen and insulation tests were accomplished also.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.728-731
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• 2009

A negative waveform having inverted polarity of conventional waveform during reset and sustain periods was proposed to improve the driving characteristics. In order to control the negative wall-charge distribution, a positive bias on the scan electrode was applied during reset period. Compared to 0 V scan-bias condition, at 8 V scan-bias the formative time lag was improved about 23.95 % and the average time lag was improved about 14.91 %. All experiments were performed with the 42-inch PDP module in XGA resolution.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.1-7
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• 1995

Cu(400$\AA$)/Polyimide has been mixed with 80 keV Ar+ and N2+from 1.0X1015ions/$\textrm{cm}^2$ to 2.0X1016 ions/$\textrm{cm}^2$. The changes of chemical bond and internal properties of sample are investigated by X-ray photoelectron spectroscopy(XPS). The quantitative adhesion strength is measured by using scratch test. The optimized mixing condition is that Cu/PI is irradiated with 80 keV N2+ at a dose of 1.0X1015 ions/$\textrm{cm}^2$, because N2+ ions can product more pyridine-like moiety, amide group, and tertiary amine moiety which are known as adesion promoters than Ar+.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.1-7
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• 2006

3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.135-139
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• 2014

Different power output of solar cells can be observed at high-temperature regions such as desert areas. In this study, performance dependence on operating temperature of crystalline silicon solar cells with different emitter types was analyzed. Based on the light current-voltage (LIV) measurement, temperature coefficients of short-circuit current density ($J_{SC}$), open-circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency were measured and compared for two groups of crystalline silicon solar cells with different emitter types. One group had homogeneously doped (conventional) emitter and another selectively doped (selective) emitter. Varying the operating temperature from 25 to 40, 60, and $80^{\circ}C$, LIV characteristics of the cells were measured and the properties of saturation current densities ($J_0$) were extracted from dark current-voltage (DIV) curve. From the DIV data, effect of temperature on the performance of the solar cells with different electrical structures for the emitter was analyzed. Increasing the temperature, both emitter structures showed a slight increase in $J_{SC}$ and a rapid degradation of $V_{OC}$. FF and power conversion efficiency also decreased with the increasing temperature. The degrees of $J_{SC}$ increase and $V_{OC}$ degradation for two groups were compared and explained. Also, FF change was explained by series and shunt resistances from the LIV data. It was concluded that the degradation of solar cells shows different values at different temperatures depending on the emitter type of solar cells.

• Progress in Superconductivity
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• v.2 no.2
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• pp.76-80
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• 2001

We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1223-1227
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• 2005

Fine microgroove is the key component to fabricate micro-grating, micro-grating lens and so on. Conventional groove fabrication methods such as etching and lithography have some problems in efficiency and surface integrity. This study deals with the creation of ultra-precision micro grooves using non-rotational diamond tool and CNC machining center. The shaping type machining method proposed in the study allows to produce V-shaped grooves of $40\mu{m}$ in depth with enough dimensional accuracy and surface. For the analysis of machining characteristics in micro V-grooving, three components of cutting forces and AE signal are measured and processed. Experimental results showed that large amplitude of cutting forces and AE appeared at the beginning of every cutting path, and cutting forces had a linear relation with the cross-sectional area of uncut chip thickness. From the results of this study, proposed micro V-grooving technique could be successfully applied to forming the precise optical parts like prism patterns on light guide panel of TFT-LCD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.228-231
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• 2002

In this paper, we estimated the insulation properties of cross-linked polyethylene (XLPE) for ultra-high voltage cable. we have studied the dielectric characteristics of XLPE due to frequency and temperature variation. The dielectric characteristics were measured in the temperature range from $25[^{\circ}C]$ to $120[{^{\circ}C]}$. Also we measured in the voltage range of 1[V] to 20[V] according to the step voltage application method. From FT-IR spectrum as an analysis of physical properties, a strong absorption in wavenumbers 700 to $730[cm^{-1}]$, $1456[cm^{-1}]$ and 2700 to $3000[cm^{-1}]$ observed by the methyl groups$(CH_{2})$. From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature $60[^{\circ}C]$ and $106.58[^{\circ}C]$.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.14-21
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• 2011

The plasma emission characteristics are investigated in cylindrical syringe plasma jet device. Cylindrical syringe electrode is applied AC power using inverter. In the center of syringe is injected into a inert gas and plasma jet occurs. If there is no ground electrode, firing voltage is 3 kV and plasma column length is 10 mm. According to high firing voltage and large current, the plasma column length control is difficult. The case of an internal ground electrode, firing voltage is 1 kV. Because of the losing current from internal ground, even if a higher input voltage, plasma emission does not occur. The case of an external ground electrode, the plasma column can be controlled between 0~10 mm with change the applied voltage from 1 to 2 kV, and the discharging current changed from 1 to 4 mA.