• 한국안전학회지
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• 제28권5호
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• pp.15-20
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• 2013

This paper dealt with melting characteristics of low-voltage miniature cartridge fuse used for 220 V electronic equipment. The experimental sample is low-voltage miniature cartridge fuse with rating of 250 V(3A) and size of $5{\times}20$ mm. In order to evaluate melting and scattering characteristics of the fuse, we applied to 8/20 ${\mu}s$ surge current, overload current and external thermal stress such as flame of fire. From the experimental results, the fuse element was melted and scattered by applied surge current(above 0.79 kA) and overload current(above 4.5 A). It was also attached to the inner surface of the fuse tube. The fuse element was attached as a thin film on inner surface of fuse tube when large surge current was applied. It was confirmed, however, the fuse element was not changed by external thermal stress such as flame and hot-air.

• 한국초전도ㆍ저온공학회논문지
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• 제5권3호
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• pp.30-33
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• 2003

1MVA high temperature superconducting (HTS) transformer with double pancake windings made of BSCCO-2223 HTS tapes was designed and manufactured. And prototype transformer with the same capacity was manufactured also. The each rated voltage of the HTS transformer is 22.9 kV and 6.6 kV. Four parallel BSCCO-2223 HTS tapes were wound in the double pancake windings of low voltage side. In order to distribute the currents equally in each HTS tapes, the three times transposition was performed between the double pancake windings. The windings of prototype transformer were wound using copper tape with the same size as BSCCO-2223 HTS tape. The core of the transformer was designed and manufactured as a shell type core made of laminated silicon steel plate. The several characteristics tests for the prototype transformer were performed in liquid nitrogen and insulation tests were accomplished also.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.728-731
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• 2009

A negative waveform having inverted polarity of conventional waveform during reset and sustain periods was proposed to improve the driving characteristics. In order to control the negative wall-charge distribution, a positive bias on the scan electrode was applied during reset period. Compared to 0 V scan-bias condition, at 8 V scan-bias the formative time lag was improved about 23.95 % and the average time lag was improved about 14.91 %. All experiments were performed with the 42-inch PDP module in XGA resolution.

• 한국진공학회지
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• 제4권S2호
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• pp.1-7
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• 1995

Cu(400$\AA$)/Polyimide has been mixed with 80 keV Ar+ and N2+from 1.0X1015ions/$\textrm{cm}^2$ to 2.0X1016 ions/$\textrm{cm}^2$. The changes of chemical bond and internal properties of sample are investigated by X-ray photoelectron spectroscopy(XPS). The quantitative adhesion strength is measured by using scratch test. The optimized mixing condition is that Cu/PI is irradiated with 80 keV N2+ at a dose of 1.0X1015 ions/$\textrm{cm}^2$, because N2+ ions can product more pyridine-like moiety, amide group, and tertiary amine moiety which are known as adesion promoters than Ar+.

• 대한전자공학회논문지SD
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• 제43권11호
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• pp.1-7
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• 2006

이상적인(ideal) 이중-게이트(double-gate) 벌크(bulk) FinFET의 3차원(3-D) 시뮬레이션을 수행하여 전기적 특성들을 분석하였다. 3차원 시뮬레이터를 이용하여, 게이트 길이($L_g$)와 높이($H_g$), 핀 바디(fin body)의 도핑농도($N_b$)를 변화시키면서 소스/드레인 접합 깊이($X_{jSDE}$)에 따른 문턱전압($V_{th}$), 문턱전압 변화량(${\Delta}V_{th}$), DIBL(drain induced barrier lowering), SS(subthreshold swing)의 특성들을 살펴보았다. 게이트 높이가 35 nm인 소자에서 소스/드레인 접합 깊이(25 nm, 35 nm, 45 nm) 변화에 따라, 각각의 문턱전압을 기준으로 게이트 높이가 $30nm{\sim}45nm$로 변화 될 때, 문턱전압변화량은 20 mV 이하로 그 변화량이 매우 적음을 알 수 있었다. 낮은 핀 바디 도핑농도($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$)에서, 소스/드레인 접합 깊이가 게이트전극보다 깊어질수록 DIBL과 SS는 급격히 나빠지는 것을 볼 수 있었고. 이러한 특성저하들은 $H_g$ 아래의 ${\sim}10nm$ 위치에 국소(local) 도핑을 함으로써 개선시킬 수 있었다. 또한 local 도핑으로 소스/드레인 접합 깊이가 얕아질수록 문턱전압이 떨어지는 것을 개선시킬 수 있었다.

• Current Photovoltaic Research
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• 제2권3호
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• pp.135-139
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• 2014

Different power output of solar cells can be observed at high-temperature regions such as desert areas. In this study, performance dependence on operating temperature of crystalline silicon solar cells with different emitter types was analyzed. Based on the light current-voltage (LIV) measurement, temperature coefficients of short-circuit current density ($J_{SC}$), open-circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency were measured and compared for two groups of crystalline silicon solar cells with different emitter types. One group had homogeneously doped (conventional) emitter and another selectively doped (selective) emitter. Varying the operating temperature from 25 to 40, 60, and $80^{\circ}C$, LIV characteristics of the cells were measured and the properties of saturation current densities ($J_0$) were extracted from dark current-voltage (DIV) curve. From the DIV data, effect of temperature on the performance of the solar cells with different electrical structures for the emitter was analyzed. Increasing the temperature, both emitter structures showed a slight increase in $J_{SC}$ and a rapid degradation of $V_{OC}$. FF and power conversion efficiency also decreased with the increasing temperature. The degrees of $J_{SC}$ increase and $V_{OC}$ degradation for two groups were compared and explained. Also, FF change was explained by series and shunt resistances from the LIV data. It was concluded that the degradation of solar cells shows different values at different temperatures depending on the emitter type of solar cells.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1223-1227
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• 2005

Fine microgroove is the key component to fabricate micro-grating, micro-grating lens and so on. Conventional groove fabrication methods such as etching and lithography have some problems in efficiency and surface integrity. This study deals with the creation of ultra-precision micro grooves using non-rotational diamond tool and CNC machining center. The shaping type machining method proposed in the study allows to produce V-shaped grooves of $40\mu{m}$ in depth with enough dimensional accuracy and surface. For the analysis of machining characteristics in micro V-grooving, three components of cutting forces and AE signal are measured and processed. Experimental results showed that large amplitude of cutting forces and AE appeared at the beginning of every cutting path, and cutting forces had a linear relation with the cross-sectional area of uncut chip thickness. From the results of this study, proposed micro V-grooving technique could be successfully applied to forming the precise optical parts like prism patterns on light guide panel of TFT-LCD.

• Progress in Superconductivity
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• 제2권2호
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• pp.76-80
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• 2001

We have fabricated YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) ramp-edge Josephson junctions by modifying ramp edges of the base electrodes without depositing any artificial barrier layer. YBa$_2$Cu$_3$O/7-x//SrTiO$_3$ (YBCO/STO) films were deposited on SrTiO$_3$(100) by on-axis KrF laser deposition. After patterning the bottom YBCO/STO layer, the ramp edge was cleaned by ion-beam and then reacted with deionized water under various conditions prior to the deposition of counter-electrode layers. The top YBCO/STO layer was deposited and patterned by photolithography and ion milling. We measured current-voltage (I-V) characteristics, magnetic field modulation of the critical current at 77 K. Some showed resistively shunted junction (RSJ)-type I-V characteristics, while others exhibited flux-flow behaviors, depending on the dipping time of the ramp edge in deionized water. Junctions fabricated using optimized conditions showed fairly uniform distribution of junction parameters such as I$_{c}$R$_{n}$ values, which were about 0.16 mV at 77 K with 1$\sigma$~ 24%. We made a dc SQUID with the same deionized water treated junctions, and it showed the sinusoidal modulation under applied magnetic field at 77 K. 77 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.228-231
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• 2002

In this paper, we estimated the insulation properties of cross-linked polyethylene (XLPE) for ultra-high voltage cable. we have studied the dielectric characteristics of XLPE due to frequency and temperature variation. The dielectric characteristics were measured in the temperature range from $25[^{\circ}C]$ to $120[{^{\circ}C]}$. Also we measured in the voltage range of 1[V] to 20[V] according to the step voltage application method. From FT-IR spectrum as an analysis of physical properties, a strong absorption in wavenumbers 700 to $730[cm^{-1}]$, $1456[cm^{-1}]$ and 2700 to $3000[cm^{-1}]$ observed by the methyl groups$(CH_{2})$. From the analysis of DSC, the crystalline melting points of the specimen observed in the temperature $60[^{\circ}C]$ and $106.58[^{\circ}C]$.

• 한국진공학회지
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• 제20권1호
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• pp.14-21
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• 2011

유리관에 삽입된 주사기 바늘을 이용한 플라즈마 제트 장치의 특성을 조사하였다. 원통형 주사기 바늘 전극에 교류 고전압을 인가하고, 유리관 끝에 설치된 접지전극의 형태에 따른 플라즈마의 방출 특성을 조사하였다. 접지전극이 없는 경우 방전 개시 전압이 약 3 kV이며, 플라즈마 방사 길이는 약 10 mm이다. 또한 높은 방전 개시 전압으로 인하여 플라즈마 방사 길이 및 전류 최소량의 제어가 어렵다. 내부접지 전극의 경우는 방전 개시 전압이 약 1 kV로 낮다. 그러나 플라즈마 전류가 내부에 위치한 접지 전극으로 흐르기 때문에 유리관 끝으로부터 플라즈마가 방출되지 않는다. 외부접지 전극의 경우는 인가전압 1~2 kV에서, 방전 전류 1~4 mA이며 플라즈마 방사 길이를 0~10 mm의 범위에서 용이하게 제어된다.