• Korean Journal of Agricultural and Forest Meteorology
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• v.6 no.3
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• pp.170-176
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• 2004

This study was carried out to establish a spatial decision support system for evaluating climatic aspects of a given geographic location in complex terrains with respect to the quality apple production. Monthly climate data from S6 synoptic stations across South Korea were collected for 1971-2000. A digital elevation model (DEM) with a 10-m cell spacing was used to spatially interpolate daily maximum and minimum temperatures based on relevant topoclimatological models applied to Jangsoo county in Korea. For daily minimum temperature, a spatial interpolation scheme accommodating the potential influences of cold air accumulation and the temperature inversion was used. For daily maximum temperature estimation, a spatial interpolation model loaded with the overheating index was used. Freezing risk in January was estimated under the recurrence intervals of 30 years. Frost risk at bud-burst and blossom was also estimated. Fruit quality was evaluated for soluble solids, anthocyanin content, Hunter L and A values, and LID ratio, which were expressed as empirical functions of temperature based on long-term field observations. AU themes were prepared as ArcGlS Grids with a 10-m cell spacing. Analysis showed that 11 percent of the whole land area of Jangsoo county might be suitable for quality 'Fuji' apple production. A computer program (MAPLE) was written to help utilize the results in decision-making for site-selection of new orchards in this region.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.109-115
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• 1993

A CdS single crystal was grown by using sublimation method. Lattice constants, $a_{o}$ and $c_{o}$, obtained by using extrapolation were $4.131{\underline{8}}{\AA}$ and $6.712{\underline{2}}{\AA}$, respectively. The carrier density was${\sim}10^{23}m^{-3}$ and the mobility was $2.93{\times}10^{-2}m^{2}$/V sec from measured Hall data at room temperature. The mobility has a increasing tendency in proportion to $T^{1/2}$ from 33 K to 150 K and a decreasing tendency in proportion to $T^{-2}$ from 180 K to room temperature. The short wavelength band peak measured from photocurrent was due to intrinsic transition, and the energy value of this peak was equal to the energy band gap of CdS photoconductor.

• Korean Journal of Optics and Photonics
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• v.34 no.6
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• pp.241-247
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• 2023

We examine the spectral characteristics of laser-induced periodic surface structures (LIPSSs) formed on an amorphous silicon film irradiated by a 355-nm nanosecond laser. A Gaussian beam with a diameter of 196 ㎛ is used to perform a two-dimensional raster scan. The laser's pulse number is varied from 190 to 280, and its intensity is adjusted within 100-130 mJ/cm². LIPSSs with a periodicity of approximately 330 nm form on the surface of the Si film, aligned perpendicular to the laser's polarization. Transmission spectra of the samples show dips around 700 nm for transverse electric polarization and around 500 nm for transverse magnetic polarization. The features are investigated with a one-dimensional-grating model using a rigorous coupled-wave analysis. Simulations confirm that the observed dips are due to the resonant modes, depending on the polarization.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

• Journal of Technologic Dentistry
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• v.20 no.1
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• pp.37-49
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• 1998

The specimens used were Ag-25 Pd-15 Cu ternary alloy and Au addition alloy. These alloys were melted and casted by induction electric furnace and centrifugal casting machine in Ar atmosphere. These specimens were solution treated for 2hr at $800^{\circ}C$ and were then quenched into iced water, and aged at $350{\sim}550^{\circ}C$ Age- hardening characteristics of the small Au-containing Ag-Pd-Cu dental alloys were investigated by means of hardness testing. X-ray diffraction and electron microscope observations, electrical resistance, ergy dispersed spectra and electron probe microanalysis. Principal results are as follows : Hardening occured in two stages, i.e., stage I in low temperature and stage II in high temperature regions, during continuous aging. The case of hardening in stage I was due to the formation of the $L1_0$ type face-centered tetragonal PdCu-ordered phase in the grain interior and hardening in stage I was affected by the Cu concentration. In stage II, decomposition of the ${\alpha}$ solid solution to a PdCu ordered phase($L1_0$ type) and an Ag-rich ${\alpha}2$ phase occurred and a discontinuous precipitation occurred at the grain boundary. From the electron microscope study, it was conclued that the cause of age-hardening in this alloy is the precipitation of the PdCu ordered phase, which has AuCu I type face-centered tetragonal structure. Precipetation procedure was ${\alpha}{\to}{\alpha}+{\alpha}_2+PdCu {\to}{\alpha}_1+{\alpha}_2+PdCu$ at Pd/Cu = 1.7 Ag-Pd-Cu alloy is more effective dental alloy as ageing treatment and is suitable to isothermal ageing at $450^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.62-70
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• 2001

The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at $45^{\circ}C$. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter $a_o$ was $5.6687\;{\AA}$. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293 K. The band gap given by the transmission edge changed from $2.700{\underline{5}}\;eV$ at 293 K to $2.873{\underline{9}}\;eV$ at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, ${\Gamma}_8$ and ${\Gamma}_7$ and to conduction band ${\Gamma}_6$ were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting ${\Delta}so$ is $0.098{\underline{1}}\;eV$. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be $0.061{\underline{2}}\;eV$ and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be $0.017{\underline{2}}\;eV$, $0.031{\underline{0}}\;eV$, respectively.

• Journal of Animal Environmental Science
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• v.13 no.2
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• pp.105-112
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• 2007

This research was carried out to test and analyse the capability of a fan for development of a sprayer in actual livestock farm. A fan was designed and made to be able to spray agricultural chemicals within 140mm in a maximum scattering range and 100m in an effective scattering range. Accordingly, its' flow rate was $3,600\;m^3/min$, and static pressure was 100 mmAq for a wide area sprayer to be sprayed widely and far. Fan performance, which was given $600\;m^3/min$ flow rate and 500 mmAq total pressure, was tested fur basic experiment. As the result, the axial power showed minimum error, which be designed to keep the fan performance. And power efficiency was the maximum. Sound level was 92.1dB that wasn't enough to environmental standard. If we take the sealed place into consideration, sound level is suitable for environmental standard.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.2
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• pp.161-168
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• 2011

The heating, ventilating, air conditioning (HVAC) system is a very important part of an automotive vehicle: it controls the microclimate inside the passenger's compartment and removes the frost or mist that is produced in cold/rainy weather. In this study, the numerical analysis of the defrost duct in an HVAC system and the de-icing pattern is carried out using commercial CFX-code. The mass flow distribution and flow structure at the outlet of the defrost duct satisfied the duct design specification. For analyzing the de-icing pattern, additional grid generation of solid domain of ice and glass is pre-defined for conductive heat transfer. The flow structure near the windshield, streakline, and temperature fields clearly indicate that the de-icing capacity of the given defrost duct configuration is excellent and that it can be operated in a stable manner. In this paper, the unsteady changes in temperature, water volume fraction, and static enthalpy at four monitoring points are discussed.