• The Journal of the Korea institute of electronic communication sciences
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• v.4 no.2
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• pp.87-92
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• 2009

In this paper, we designed and fabricated the active amplification block for the integrated antenna module. The fabricated amplification module have a proper gain and low noise figure in the band of AM/FM band, T-DMB band and GPS band, and show good isolation performance for each band. Manufactured circuits satisfied the gain performance 7 dB in AM band, 11 dB in FM band, 10 dB in T-DMB, and 17 dB in GPS band. The integrated amplification block was realized by 35 mm*35 mm size, and was shown as the same sensitivity performance as compared with a conventional reference antennas.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1581-1584
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• 2008

In dual-polycide-gate structure with butting contact, net doping concentration of polysilicon was decreased due to overlap between $n^+$ and $p^+$ and lateral dopant diffusion in silicide/polysilicon layers. The generation of parasitic Schottky diode in butting contact region is attributed both to the $CoSi_2$-loss due to $CoSi_2$ agglomeration and to the decrease in net doping concentration of polysilicon layer. Parasitic Schottky diode reduces noise margin of sense amplifier in DDI DRAM, which causes column fail. The column fail could be reduced by physical isolation of $n^+/p^+$ polysilicon junction or suppressing $CoSi_2$ agglomeration by using nitrogen implantation into $p^+$ polysilicon before $CoSi_2$ formation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.12A
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• pp.1019-1024
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• 2003

In the thesis, we propose a new type of the predistortion linearizer using frequency multiplier The linearizer utilizing the 2nd and 3th harmonic used the individual control of the 3rd and 5th order intermodulation distortion(IMD) component. This structure is composed of wilkinson power combiner for combine and isolation of output signal, 3rd order IMD product controller using doubler and 5th order IMD product controller using tripler. The proposed predistortion linearizer controlled by individual order is obtained for about -16 dBc and 18 dBc of 3rd order and 5th order IMD components, respectively, over the frequency band 870 MHz to 880 MHz at the output power of 34 dBm/tone.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.381-391
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• 2010

In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.339-342
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• 2004

본 논문은 밀리미터파 대역 무선통신 시스템 송신부의 응용을 위해 CPW 구조를 이용하여 V-band용 상향 주파수 혼합기와 2단 구동증폭기를 설계$\cdot$제작하였다. 능동소자는 본 연구실에서 제작한 $0.1{\mu}m$ 게이트 GaAs Pseudomorphic HEMTs(PHEMTs)를 사용하였으며 입$\cdot$출력단은 CPW를 사용해 정합 회로를 설계하였다. 제작된 상향 주파수 혼합기는 LO power 5.4 dBm, 2.4 GHz IF 신호를 -10.25 dBm으로 입력하였을 때 Conversion Loss 1.25 dB, LO-to-RF Isolation은 58 GHz에서 13.2 dB의 특성을 나타내었다 2단 구동 증폭기는 측정결과 60 GHz에서 S21 이득 13 dB, $58\;GHz\;\~\;64\;GHz$ 대역에서 S21 이득 12 dB 이상을 유지하는 광대역 특성을 얻었고 증폭기의 Pl dB는 3.8 dBm, 최대 출력전력은 6.5 dBm의 특성을 얻었다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.883-889
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• 2006

In this paper, parasitic resonance modes generated in a conductor backed coplanar wave guide(CBCPW) and stripline band pass filter(BPF) and the oscillation phenomena of a 40 GHz power amplifier module(PAM) are analyzed and several methods to suppress them are presented for low-temperature co-fired ceramic(LTCC) based millimeter-wave RF System-in-Package(SiP) applications. Parasitic rectangular wave guide(RWG) modes of the CBCPW structure are completely suppressed in the operation frequency band by decreasing the distance between its vias and by increasing the mode frequency. In the stripline structure, RWG resonance modes are clearly eliminated by removing some vias facing each other and by placing them diagonally. In the case of the 40 GHz PAM, in order to reduce a cross talk due to radiation that is generated from interconnection discontinuities, high isolation structures such as embedded DC bas lines and CPW signal lines are used and then the oscillated PAM is improved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.11 s.102
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• pp.1114-1122
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• 2005

In this paper, the study of a design, fabrication and measurement of the receiver MMIC LNA, mixer for S-band application is described. The LNA is designed by 2-stage common source. The mixer is composed of active LO and RF balun to integrate on a chip and applied a newly proposed bias circuit to compensate the process variations of active devices. The LNA has 15.51 dB-gain and 1.02dB-Noise Figure at 2.1 GHz. The conversion gain of the mixer is -12 dB, IIP3 is approximately 4.25 dBm and port-to-port isolation is over 25 dB. The newly proposed bias circuit is composed of a few FETs and resistors, and can compensate the variation of the threshold voltage by the process variations, temperature changes and etc. The designed chip size is $1.2[mm]\times1.4[mm]$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.8
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• pp.709-716
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• 2016

In this paper, A duplexer module with temperature-insensitive electrical characteristics was proposed for remote wireless communication system. Duplexer modules are required to have performances of low insertion loss, high isolation between transmitted band and received band, harmonic suppression as well as high power durability in the system for transmitting guided information to missile flying a free space on the ground. The proposed duplexer module are consist of transmission bandpass filter and receiving bandpass filter which are connected to common antenna port, planar coupler for output power monitoring and low pass filter for harmonic attenuation of power amplifier and coaxial cavity resonator. The material and dimensions of the resonator are determined for minimum frequency shift by temperature variation using 3D EM simulation. The measured results of the prototype showed a good agreement with the simulation results, and it should be well applied not only for guided weapon systems but also for any other communication systems such as remote radio head.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.78-84
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• 2012

In this paper, we introduced the design technique about a Ka band receive module for millimeter wave seekers. The receiver module consists of a waveguide, circulator and transition for antenna connection, and a limiter and gain control amplifier for receiver protection. This module is comprised of a sum, azimuth and elevation channel for receiving monopules signal, and a SLB channel for the acquisition of jamming signal. In this paper, receiver gain and range of gain control dependent on ADC nonlinear characteristic was analyzed and designed for wide dynamic range receive. In the test result of the fabricated Ka-band receive, the frequency band is 1 GHz, the noise figure is as low as 8.2 dB, the gain is $56{\pm}2dB$, the dynamic range is 135 dB, the gain congtrol is more than 86 dB, the channel isolation is more than 35 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.25-33
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• 1998

In this paper, we describe a single-gate MESFET mixer at PCS(Personal Communication Service) frequency band. The PCS frequency band is 1965~2025 MHz in FR and 140 MHz in IF irrespectly. The design of the mixer was executed by microwave simulator, EEsof Libra. The matching network is consisted of rectangular inductor, MIM capacitor and open stub. The ma- nufacture work was accomplished by the micro-pen and wedge-bonder. The mixer showed $6.69\pm0.65$ dB of conversion gain, $-14.9\pm3.5$dB of RF reflection coefficient and 57.83 dB of LO/IF isolation at 10 dBm of LO power when LO frequency is 1855 MHz. When this mixer is used at PCS terminal, IF-amplifier which compensates the conversion loss of diode mixer may be omitted.