• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1761-1763
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• 1998

ITO(Iridium-Tin Oxide) thin film, as discharge electrodes in AC PDP, should have low resistivity and high transparency. Regarded as a high deposition rate method, the ITO thin film fabricated by the facing target sputtering system has been studied in this paper. The electrical property of the ITO film deposited below $150^{\circ}C$ is not satisfied. The SEM pictures show that the ITO films deposited below $150^{\circ}C$ are amorphous. After being annealed the amorphous ITO films become crystalline, and for this reason, the electrical property of amorphous ITO films can be effectively improved by annealing process. An ITO film with the resistivity as low as $1.99{\times}10^{-4}$ and transparency above 85% has be gotten after vacuum annealing at $300^{\circ}C$ for 2 hours while deposited at $75^{\circ}C$. The corresponding deposition rate is $220{\AA}/min$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.432-432
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• 2010

Organic light emitting diodes (OLED) thin films were fabricated by Electrostatic spray deposition (ESD). In this study, we reported the thickness, morphology, current efficiency, luminescence of OLED fabricated by ESD. These results were compared with the spin coating method, and showed that also ESD is a good fabrication method for OLED because of its characteristics similar with the results using spin coating. The active layer consists of organic blends with Poly(N-vinylcarbazole) (PVK), 2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N'-Bis(3-methylphenyl) -N,N'-bis(phenyl)-benzidine (TPD), Tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), and the structure of OLED consists of aluminum (Al), lithium fluoride (LiF), organic blends, PEDOT:PSS and Indium-tin-oxide (ITO), which was used as the top cathode, cathode interfacial layer, emitting layer and bottom anode, respectively. The results suggest that Electrostatic spray deposition is a promising method for the next generation of OLED fabrication since it has a probability fabricating large-area thin films.

• 한국응용과학기술학회지
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• 제19권2호
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• pp.97-102
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• 2002

Recently, the phosphorescent organic light-emitting devices (OLEDs) have been extensively studied for their high internal quantum efficiency. In this study, we synthesised several phosphorescent metal complexes, and certified their composition using NMR. We also investigated the characteristics of the phosphorescent OLEDs with the green emitting phosphor, $Ir(ppy)_{3}$. The devices with a structure of indium-tin-oxide(ITO)/N,N'-diphenyl-N,N'-(3-methylphenyI}-1,1'-biphenyl-4,4'-diamine (TPD)/metal complex doped in host materials/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline(BCP)/tris (8-hydroxyquinolinato) Aluminum($Alq_{3}$)/Li:Al/Al was fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of tris(2-phenylpyridine)iridium ($Ir(ppy)_{3}$), we fabricated several devices and investigated their characteristics.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년도 제31회 추계학술대회논문집
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• pp.371-374
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• 2008

고농도 과산화수소를 분해시킬 수 있는 다양한 촉매의 성능을 비교하였다. 감마 알루미나에 산화망간, 백금, 이리듐을 각각 코팅하여 펠렛 촉매를 제작하였다. 50 Newton 급 추력기를 이용하여 펄스 응답 특성을 비교하였다. 그 결과 이리듐 촉매가 가장 빠른 응답성을 나타내었으나, 연속모드에서 반응 실패 경향을 보여 과산화수소 분해용 촉매로는 부적절하였다. 백금, 산화망간 촉매 또한 우수한 반응성을 보여 높은 가능성을 보였으며, 고추력 추력기와 같이 촉매양이 많이 요구되는 경우, 비용문제를 고려한다면 산화망간 또한 과산화수소 분해에 적합할 것으로 판단된다.

• 한국결정성장학회지
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• 제9권2호
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• pp.141-148
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• 1999

Ir 도가니에서 PbO와 $WO_{3}$를 50 %~50 % 혼합한 시료로 부터 쵸코랄스키 성장방법에 의해 고품질의 순수한 $PbWO_{4}$와 Nb 도핑한 $PbWO_{4}$를 성장 시켰다. 결정은 성분의 선택적 결손에 부합하는 화학양론적 변화는 $PbWO_{4}$의 노란색 형성에 원인이 되었다. X선 회절 실험을 통해서 각 $PbWO_{4}$ 결정의 격자상수 변화를 조사하였으며 광발광, 광흡수 및 라만 스펙트럼에 대한 특성들에 대해 조사를 하였다. 광발광은 10 K~300 K 온도 영역에서 측정 되었으며 낮은 온도 영역에서는 미흡한 온도의존성을 보였으며 200 K 온도 이상에서는 열적소광에 의한 광발광 강도의 감소를 보였다. PL 강도와 반치폭의 온도 의존성으로 부터 각 PWO 시료에 대한 활성화 에너지, Huang-Rhys 결합상수, 비균질선폭계수를 구하였다.

• 한국응용과학기술학회지
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• 제24권1호
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• pp.74-78
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• 2007

A new blue phosphorescent material for organic light emitting diodes (OLEDs), Iridium(III)bis[2-(4-fIuoro-3-benzonitrile)-pyridinato-N,C2'] picolinate (Firpic-CN), was synthesized and studied. We compared characteristics of Firpic-CN and Bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) which has been used for blue dopant materials frequently. The devices structure were indium tin oxide (ITO) (1000 ${\AA}$)/N,N'-diphenyl-N,N'-(2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) (500 ${\AA}$)/4,4'-N,N'-dicarbazole-biphyenyl (CBP) : FIrpic and FIrpic-CN (X wt%)/4,7-diphenyl-1,10-phenanthroline (BPhen) (300 ${\AA}$)/lithum quinolate (Liq) (20 ${\AA}$)/Al (1000 ${\AA}$). 15 wt% FIrpic-CN doped device exhibits a luminance of $1450\;cd/m^2$ at 12.4 V, luminous efficiency of 1.31 cd/A at $3.58mA/cm^2$, and Commission Internationale d'Eclairage $(CIE_{x,y})$ coordinates of (0.15, 0.12) at 12 V which shows a very deep blue emission. We also measured lifetime of devices and was presented definite difference between devices of FIrpic and FIrpic-CN. Device with FIrpic-CN as a dopant presented lower longevity due to chemical effect of CN ligand.

• 한국재료학회지
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• 제21권4호
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• pp.212-215
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• 2011

New organic light-emitting diodes with structure of indium-tin-oxide[ITO]/N,N'-diphenyl-N, N'-bis-[4-(phenyl-m-tolvlamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-poly-aminophenyl) cyclohexane[TAPC]/bis(10-hydroxy-benzo(h)quinolinato)beryllium[Bebq2]/Bebq2:iridium(III)bis(2-phenylquinoline-N,C2')acetylacetonate[(pq)2Ir(acac)]/ET-137[electron transport material from SFC Co]/LiF/Al using the selective doping of 5%-(pq)2Ir(acac) in a single Bebq2 host in the two wavelength (green, orange) emitter formation were proposed and characterized. In the experiments, with a 300${\AA}$-thick undoped emitter of Bebq2, two kinds of devices with the doped emitter thicknesses of 20${\AA}$ and 40${\AA}$ in the Bebq2:(pq)2Ir(acac) were fabricated. The device with a 20${\AA}$-thick doped emitter is referred to as "D-1" and the device with a 4${\AA}$-thick doped emitter is referred to as "D-2". Under an applied voltage of 9V, the luminance of D-1 and D-2 were 7780 $cd/m^2$ and 6620 $cd/m^2$, respectively. The electroluminescent spectrum of each fabricated device showed peak emissions at the same two wavelengths: 508 nm and 596 nm. However, the relative intensity of 596 nm to 508 nm at those wavelengths was higher in the D-2 than in the D-1. The D-1 and D-2 devices showed maximum current efficiencies of 5.2 cd/A and 6.0 cd/A, and color coordinates of (0.31, 0.50) and (0.37, 0.48) on the Commission Internationale de I'Eclairage[CIE] chart, respectively.

• 한국재료학회지
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• 제26권3호
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• pp.130-135
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• 2016

To alloy high melting point elements such as boron, ruthenium, and iridium with copper, heat treatment was performed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ at the temperature of $1200^{\circ}C$ in vacuum for 30 minutes. The microstructure analysis of the alloyed sample was confirmed using an optical microscope and FE-SEM. Hardness and trace element analyses were performed using Vickers hardness and WD-XRF, respectively. Diffusion profile analysis was performed using D-SIMS. From the microstructure analysis results, crystal grains were found to have formed with sizes of 2.97 mm. For the copper alloys formed using metal oxides of $B_2O_3$, $RuO_2$, and $IrO_2$ the sizes of the crystal grains were 1.24, 1.77, and 2.23 mm, respectively, while these sizes were smaller than pure copper. From the Vickers hardness results, the hardness of the Ir-copper alloy was found to have increased by a maximum of 2.2 times compared to pure copper. From the trace element analysis, the copper alloy was fabricated with the expected composition. From the diffusion profile analysis results, it can be seen that 0.059 wt%, 0.030 wt%, and 0.114 wt% of B, Ru, and Ir, respectively, were alloyed in the copper, and it led to change the hardness. Therefore, we verified that alloying of high melting point elements is possible at the low temperature of $1200^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제20권1호
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• pp.85-88
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• 1999

Me3NO selectively abstracts the proton from [IrH(CO)(PPh3)2L(A)]0.1+,2+ (1) (A: -CCPh, Cl-, CH3CN and L: CH3CN, Cl-, C1O4-) to give the trans-elimination products, Ir(CO)(PPh3)2(A) (2). The reductive elimination of H+ and Cl- from Ir(H)Cl2(CO)(PPh3)2 (lb) to give IrCl(CO)(PPh3)2 (2b) is first order in both lb and Me3NO. The rate law d[2b]/dt=kobs[lb]=k2[lb][Me3NO] suggests the formation of (PPh3)2(CI)2(CO)Ir-H-ON+Me3 in the rate determining step (k2) followed by the fast dissociation of both H-ON+Me3 and the trans ligand Cl-. The rate significantly varies with the cis liaand A and the trans ligand L and is slower with both A and L being Cl- than other ligands. Me3NO selectively eliminates CO from [Ir(H)2(CO)(PPh3)2L]0,+ (3) (L=CH3CN, C1O4-) to produce [Ir(H)2(PPh3)2L'(CH3CN)]+ (4) (L'=CH3CN, PPh3) in the presence of L. Me3NO does not readily remove either H+ or CO from cis, trans- and trans, trans-lr(H)(-CCPh)2(CO)(PPh3)2 and cis, trans-Ir(H)2Cl(CO)(PPh3)2. The choice whether hydridocarbonyls, 1 and 3 undergo the deprotonation or decarbonylation may be understood mostly in terms of thermodynamic stability of the products and partly by kinetic preference of Me3NO on proton and CO.

• 한국응용과학기술학회지
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• 제33권2호
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• pp.352-360
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• 2016

본 연구에서는 하수슬러지 가용화를 위한 불용성전극을 개발하여 전기화학적 특성을 확인하였다. 이리듐을 주촉매로 사용하여 하수슬러지 가용화에 적합한 촉매를 선정하여 내구성이 우수하고 하수슬러지 전기분해에 적합한 기능성 전극 실험을 진행하였고 다음과 같은 결과를 얻었다. 전극의 코팅 소성온도를 주 촉매인 Ir의 질량감소가 적고, 흡열반응 구간인 $300^{\circ}C$부터 $500^{\circ}C$까지의 범위로 선정하고 실험을 하였다. 실험결과 $350^{\circ}C$에서 촉매의 효율성이 가장 우수하게 나왔다. 각각의 바인더 별(Ta, Sn, W) 실험에서도 $350^{\circ}C$에서 가장 큰 촉매효율성이 나타났다. 바인더로 사용한 탄탈럼, 주석, 텅스텐 중 탄탈럼이 다른 금속보다 주 촉매의 특성을 그대로 유지시키며 전극의 효율성을 향상시키는 것을 확인하였다. 50%$IrO_2$ 전극의 경우 1.4 V(vs. Ag/AgCl) 약 $29mA/cm^2$의 전류가 발생하여 전극의 효율을 평가하였다.