• Title/Summary/Keyword: IrMn

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Effect of PC(Polycarboxylate)-type Superplasticizer on the Hydration Reaction of Cement Paste (PC(Polycarboxylate)계 고유동화제가 시멘트 수화 반응에 미치는 영향)

  • Chae, Eun-Jin;Shin, Jin-Yong;Suh, Jeong-Kwon;Hong, Ji-Sook;Kim, Jae-Young
    • Proceedings of the Korea Concrete Institute Conference
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    • 2006.05b
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    • pp.533-536
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    • 2006
  • PC-type copolymers were synthesized using MPEG(Polyethylene glycol methyl ether methacrylate, Mn=2080) to different mole ratios of mono-carboxylic acid(AA : Acylic acid). The mole ratios of AA were 2, 3, 4. To investigate effects of PC-type co-polymers on the hydration of cement, experiments involving FT-IR, XRD, SEM have been analysed with cement paste specimens to 1, 3, 28 day. The hydration reaction rate of cement paste was slightly delayed at 1 day, due to increase in molar ratio of [AA] / [MPEG], it was recovered in the days after.

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Development of Dark Field image Processing Technique for the Investigation of Nanostructures

  • Jeon, Jongchul;Kim, Kyou-Hyun
    • Journal of Powder Materials
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    • v.24 no.4
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    • pp.285-291
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    • 2017
  • We propose a custom analysis technique for the dark field (DF) image based on transmission electron microscopy (TEM). The custom analysis technique is developed based on the $DigitalMicrograph^{(R)}$ (DM) script language embedded in the Gatan digital microscopy software, which is used as the operational software for most TEM instruments. The developed software automatically scans an electron beam across a TEM sample and records a series of electron diffraction patterns. The recorded electron diffraction patterns provide DF and ADF images based on digital image processing. An experimental electron diffraction pattern is recorded from a IrMn polycrystal consisting of fine nanograins in order to test the proposed software. We demonstrate that the developed image processing technique well resolves nanograins of ~ 5 nm in diameter.

A study on the radiation properties of Far-infrared and microstructure in PTC thermistor (PTC 서머스터의 원적외선 방사특성과 미세구조에 관한 연구)

  • 박춘배;송민종;강도열
    • Electrical & Electronic Materials
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    • v.6 no.4
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    • pp.311-317
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    • 1993
  • 발열체 소자에 있어서 발열체의 방사스펙트럼과 피가열체의 흡수스펙트럼을 일치시키는 문제는 효과적인 가열을 위하여 매우 중요한 연구과제이다. 본 연구는 재료의 합성기술과 열처리기술을 이용하여 PTC 서머스터의 R-T특성은 그대로 유지시키면서 원적외선 방사특성을 증대시키기 위한 것이다. 이를 위하여 BaTiO$_{3}$+1.67Al$_{2}$O$_{3}$+3.75SiO$_{2}$+1.25TiO$_{2}$을 기본조성으로 하고 여기에 첨가제로서 Sb$_{2}$O$_{3}$와 MnO$_{2}$를 선정하여 이의 첨가량과 소결온도 그리고 소결온도구배를 파라메터로한 시편을 제작하였으며 각 시편의 IR특성과 R-T특성등을 측정 검토한 결과 파장 4.5-14.5[.mu.m]범위에서 방사율 0.8이상의 고효율 원적외선 방사특성을 얻었다.

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Synthesis and Physicochemical Properties of Schiff Base Macrocyclic Ligands and Their Transition Metal Chelates

  • Rafat, Fouzia;Siddiqi, K.S.
    • Journal of the Korean Chemical Society
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    • v.55 no.6
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    • pp.912-918
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    • 2011
  • Tetraaza Schiff base macrocyclic ligands, $L^1$,$L^2$ and their transition metal chelates have been synthesized and characterized by elemental analyses, IR, electronic, EPR and $^1H$ NMR spectra, TGA and magnetic measurements. The molar conductance of one milli-molar solution of the complexes measured in DMF indicates that the divalent metal complexes are nonelectrolyte while those of trivalent metal ion, are 1:1 electrolytic in the same solvent. The reduction of Racah parameter from the free ion value confirms the presence of considerable covalence of metal ligand sigma bond in the Co(II) and Mn(II) complexes. The EPR spectra of Cu(II) complexes at room temperature shows axial symmetry indicating a $d_x{^2}_{-y}{^2}$ ground state with significant covalent character. The thermal analysis suggests that the complexes do not contain water molecules because only the metal is left as residue.

BOTTOM IrMn-BASED SPIN VALVES BY USING OXYGEN SURFACTANT

  • J. Y. Hwang;Kim, M. Y.;K. I. Jun;J. R. Rhee;Lee, S. S.;D. G. Hwang;S. C. Yu;Lee, S. H.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.62-63
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    • 2002
  • To reach 100 Gbit/in$^2$ magnetic recording densities in hard disk drives specular enhancement of giant magnetoresistance (GMR) effect in spin valve (SV) films has become one of the indispensable means for application as read elements in recording heads [1]. More recently specular spin valve (SSV) structure containing nano-oxides layers (NOL) were reported [2], where MR enhancement is caused to extended mean free path of majority spin polarized electrons through specular reflection at metal/insulator interfaces [3] in the SV films. (omitted)

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THERMAL SATABILITY AND MAGNETORESISTANCE OF TOP SPIN VALVE WITH SYNTHETIC ANTIFERROMAGNET CoFe/Ru/CoFe/IrMn

  • J. Y. Hwang;Kim, M. Y.;K. I. Jun;J. R. Rhee;Lee, S. S.;D. G. Hwang;S. C. Yu;Lee, S. H.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.64-65
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    • 2002
  • Recently the synthetic antiferromagnetic layer (SAF) has received much attention because it replaces the pinned layer of the conventional spin valve (CSV) sensors and its overall performance [1], The spin valve (SV) with SAF has the from buffer/F/Cu/APl/Ru/AP2/AF, where F is the soft ferromagnetic layer (typically NiFe with CoFe interfacial doping), AP1 and AP2 are two ferromagnetic layers (typically CoFe alloys) antiferromagnetically coupled through a thin Ru layer. (omitted)

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Dielectric Characteristics of Magnetic Tunnel Junction

  • Kim, Hong-Seog
    • The Journal of Engineering Research
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    • v.6 no.2
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    • pp.33-38
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    • 2004
  • To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

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Exchange bias dependence on NiFe thickness of free layer and its thermal effect (스핀밸브 박막에서 교환바이어스의 자유층 NiFe 두께의존성과 열적 효과)

  • Y.K. Hu;S.M. Yoon;J.J. Lim;Kim, C.G.;Kim, C.O.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.229-229
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    • 2003
  • Enhancement of the exchange bias and optimization of the structure have been the focus that many researchers studied, recently [1]. In this report, magnetic properties of MTJs with structure of Si/Ta (5)/Cu (10)/ Ta (5)/ Ni$\sub$80/Fe$\sub$20/ Cu (5)/ Mn$\sub$75Ir$\sub$25/ (10)/ Co$\sub$70/Fe$\sub$30/ (2.5)/ Al-O (1.5)/ Co$\sub$70/Fe$\sub$30/ (2.5)/ Ni$\sub$80/Fe$\sub$20/ (t)/ Ta (5) (t=0,10, 30, 60 and 100 nm, respectively) were investigated. The relationship between the structure and magnetic parameters of interfacial exchange coupling and interlayer coupling in as-deposited and annealed junctions was studied. The temperature dependence of exchange coupling was considered.

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Dependence of Magnetoresistance on the Underlayer Thickness for Top-type Spin Valve (Top형 스핀밸브 구조의 Si 기판에서의 하지층 두께에 따른 자기저항 특성 연구)

  • Ko, Hoon;Kim, Sang-Yoon;Kim, Soo-In;Lee, Chang-Woo;Kim, Ji-Won;Jo, Soon-Chul
    • Journal of the Korean Magnetics Society
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    • v.17 no.2
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    • pp.95-98
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    • 2007
  • In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.