BOTTOM IrMn-BASED SPIN VALVES BY USING OXYGEN SURFACTANT

  • J. Y. Hwang (Sookmyung Women's University) ;
  • Kim, M. Y. (Sookmyung Women's Universit) ;
  • K. I. Jun (Sookmyung Women's Universit) ;
  • J. R. Rhee (Sookmyung Women's Universit) ;
  • Lee, S. S. (Sangji Universit) ;
  • D. G. Hwang (Sangji Universit) ;
  • S. C. Yu (Chongju Universit) ;
  • Lee, S. H. (Chungbuk National University)
  • Published : 2002.12.01

Abstract

To reach 100 Gbit/in$^2$ magnetic recording densities in hard disk drives specular enhancement of giant magnetoresistance (GMR) effect in spin valve (SV) films has become one of the indispensable means for application as read elements in recording heads [1]. More recently specular spin valve (SSV) structure containing nano-oxides layers (NOL) were reported [2], where MR enhancement is caused to extended mean free path of majority spin polarized electrons through specular reflection at metal/insulator interfaces [3] in the SV films. (omitted)

Keywords