• Publications of The Korean Astronomical Society
• /
• v.32 no.1
• /
• pp.355-357
• /
• 2017

For future space IR missions, such as SPICA, it is crucial to establish an experimental method for evaluating the performance of mid-IR detectors. In particular, the wavelength dependence of the sensitivity is important but difficult to be measured properly. We are now preparing a testing system for mid-IR Si:As/Si:Sb detectors on SPICA. We have designed a cryogenic optical system in which IR signal light from a pinhole is collimated, passed through an optical filter, and focused onto a detector. With this system, we can measure the photoresponse of the detector for various IR light using optical filters with different wavelength properties. We have fabricated aluminum mirrors which are adopted to minimize thermal distortion effects and evaluated the surface figure errors. The total wavefront error of the optical system is $1.3{\mu}m$ RMS, which is small enough for the target wavelengths ($20-37{\mu}m$) of SPICA. The point spread function measured at a room temperature is consistent with that predicted by the simulation. We report the optical performance of the system at cryogenic temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.376-381
• /
• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.4
• /
• pp.204-209
• /
• 2017

Thermal and structural stability in the glass transition region of chalcogenide glasses has been investigated in terms of thermodynamics for application to various optoelectronic devices. In this study, the compositions of $Ge_xSb_{20}Se_{80-x}$ (x = 10, 15, 20, 25, and 30) were selected to investigate the glass stability according to germanium ratios. The chalcogenide bulks were fabricated by using a traditional melt-quenching method. Thin films were deposited by a thermal evaporation system, maintaining the deposition ratio of $3{\sim}5{\AA}$ in order to have uniformity. The thermal and structural properties were measured by a differential scanning calorimeter (DSC) and X-ray diffraction (XRD). The DSC analysis provided thermal parameters and theoretical glass region stabilities. The XRD analysis supported the theoretical stabilities because of where the crystallization peak data occurred.

• Journal of the Korean Chemical Society
• /
• v.56 no.1
• /
• pp.54-57
• /
• 2012

New Schiff base derivatives of organoheterobimetallic-${\mu}$-oxoisopropoxide $[Bu_2SnO_2Ti_2(OPr^i)_6]$ have been synthesized by the thermal condensation ${\mu}$-oxoisopropoxide compound with Schiff bases in different molar ratios (1:1-1:4) yielded the compounds of the type $[Bu_2SnO_2Ti_2(OPr^i)_{6-n}(SB)_n]$ (where n is 1-4 and SB=Schiff base anion) respectively. The ${\mu}$-oxoisopropoxide derivatives have been characterized by elemental, spectral analysis (IR, $^1H$, $^{13}C$, $^{119}Sn$ NMR) and molecular weight measurement The studies reveal that the derivative compounds show monomeric nature. Further these are found less susceptible to hydrolysis as compared to parent compound and may prove excellent precursors for the mixed metal oxides.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.162-162
• /
• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.239-246
• /
• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.11
• /
• pp.961-966
• /
• 1994

Oligomerization of phenylacetylene is catalyzed by $Rh(ClO_4)(CO)(PPh_3)_2$ (Rh-1), $[Rh(CO)(PPh_3)_3]ClO_4$ (Rh-2), $[Rh(COD)L_2]ClO_4 (L_2=(PPh_3)_2$, Rh-3; $(PPh_3)(PhCN)$, Rh-4; $(PhCN)_2$, Rh-5), $[Rh(C_3H_5)(Cl)(CO)(SbPh_3)_2]ClO_4$ (Rh-6), $[Ir(COD)L_2]ClO_4 (L_2=(PPh_3)_2$, $Ir-1; (PPh_3)(PhCN)$, $Ir-2; (PhCN)_2$, Ir-3; (AsPh_3)(PhCN)$, $Ir-4; Ph_2PCH_2CH_2PPh_2$, Ir-5; COD, Ir-6 and 2,2'-dipyridyl, Ir-7), $Ir(ClO_4)(CO)(PPh_3)_2$, $Ir-8, [Ir(PhCN)(CO)(PPh_3)_2]ClO_4$, Ir-9 to produce dimerization products, 1,3-diphenylbut-1-yn-3-ene, 1, (E)-1,4-diphenylbut-1-yn-3-ene, 2 and (Z)-1,4-diphenylbut-1-yn-3-ene, 3, and cyclotrimerization products, 1,3,5-triphenylbenzene, 4 and 1,2,4-triphenylbenzene, 5. Product distribution of the oligomers varies depending on various factors such as the nature of catalysts, reaction temperature, counter anions and excess ligand present in the reaction mixtures. Increasing reaction temperature in general increases the yield of the cyclotrimerization products. Exclusive production of dimer 1 and trimer 4 can be obtained with Ir-1 at 0 $^{\circ}$C and with Ir-2 in the presence of excess PhCN (or $CH_3CN$) at 50 $^{\circ}$C, respectively. Dimer 2 (up to 81%) and trimer 5 (up to 98%) are selectively produced with Rh-1 at 50 and 100 $^{\circ}$C respectively. Production of 3 is selectively increased up to 85% by using $PF_6$- salt of $[Ir(COD)(PPh_3)_2]$+ at 25 $^{\circ}$C. Addition of $CH_3I$ to Rh-1 produces $CH_3PPh_3^+I-$ and increases the rate of oligomerization(disappearance of phenylacetylene). Among the metal compounds investigated in this study, Ir-1 catalyzes most rapidly the oligomerization where the catalytically active species seems to contain lr(PPh3)2 moiety. The stoichiometric reaction of phenylacetylene wth Ir-9 at 25 $^{\circ}$C quantitatively produces hydridophenyl-ethynyl iridium(III) complex, $[lr(H)(C{\equiv}CPh)(PhCN)(CO)(PPh_3)_2]ClO_4$ (Ir-11), which seems to be an intermediate for the oligomerization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.178-178
• /
• 2010

칼코게나이드계 재료를 사용한 비냉각 적외선 센서의 윈도우를 제작하여 그 특성을 조사하였다. 조성을 EDS로 분석한 결과 Ge-Se-Sb로 구성되어 있음을 확인하였다. 두께 2mm인 윈도우 모재를 양면 경연마한 후 코팅 설계치로 8-12um 영역에서 평균 투과도가 95.6%로 나타났다. 이온빔보조증착장치를 이용하여 Ge, ZnS, $YF_3$ 소스로 코팅한 결과 투과도는 동일파장영역에서 약 94%로 나타났다. 칼코게나이드 원재료의 투과도는 약 69%로써 12um 영역 부근에서 강한흡수를 보였다. 코팅면의 거칠기 값(Ra)은 약 1.5 nm로써 매우 매끄러운 면을 얻었으며, 단면 SEM 측정 결과 설계치와 유사한 박막 두께를 얻었다.

• Korean Journal of Materials Research
• /
• v.33 no.10
• /
• pp.414-421
• /
• 2023

Infrared radiation (IR) refers to the region of the electromagnetic radiation spectrum where wavelengths range from about 700 nm to 1 mm. Any object with a temperature above absolute zero (0 K) radiates in the infrared region, and a material that transmits radiant energy in the range of 0.74 to 1.4 um is referred to as a near-infrared optical material. Germanate-based glass is attracting attention as a glass material for infrared optical lenses because of its simple manufacturing process. With the recent development of the glass molding press (GMP) process, thermal imaging cameras using oxide-based infrared lenses can be easily mass-produced, expanding their uses. To improve the mechanical and optical properties of commercial materials consisting of ternary systems, germanate-based heavy metal oxide glasses were prepared using a melt-cooling method. The fabricated samples were evaluated for thermal, structural, and optical properties using DSC, XRD, and XRF, respectively. To derive a composition with high glass stability for lens applications, ZnO and Sb₂O₃ were substituted at 0, 1, 2, 3, and 4 mol%. The glass with 1 mol% added Sb₂O₃ was confirmed to have the optimal conditions, with an optical transmittance of 80 % or more, a glass transition temperature of 660 ℃, a refractive index of 1.810, and a Vickers hardness of 558. The possibility of its application as an alternative infrared lens material to existing commercial materials capable of GMP processing was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.2
• /
• pp.135-139
• /
• 2012

In this study, we synthesized the chalcogenide glass($Ge_{19}Sb_{23}Se_{58}$) for infrared optics by meltquenching method and verified the effect of cooling condition on the glass properties. The structural and optical properties of the glass were analyzed by XRD, FT-IR and SEM image. The glass synthesized under the cooling temperature of $980^{\circ}C$ shows transmittance of 58% at $8\sim12{\mu}m$, which was decreased as the cooling temperature was decreased. In addition, thermal and hardness also were measured. From the analysis results, we ascertained the feasibility as a molding materials for infrared optics.