• Journal of Industrial and Engineering Chemistry
• /
• v.68
• /
• pp.109-116
• /
• 2018

$Eu_2(SO_4)_3$ was synthesized by chemical precipitation method and the crystal structure was determined by Rietveld analysis. The compound crystallizes in monoclinic space group C2/c. In the air environment, $Eu_2(SO_4)_3$ is stable up to $670^{\circ}C$. The sample of $Eu_2(SO_4)_3$ was examined by Raman, Fourier-transform infrared absorption and luminescence spectroscopy methods. The low site symmetry of $SO_4$ tetrahedra results in the appearance of the IR inactive ${\nu}_1$ mode around $1000cm^{-1}$ and ${\nu}_2$ modes below $500cm^{-1}$. The band intensities redistribution in the luminescent spectra of $Eu^{3+}$ ions is analyzed in terms of the peculiarities of its local environment.

• Bulletin of the Korean Chemical Society
• /
• v.15 no.6
• /
• pp.465-468
• /
• 1994

The charge transfer compounds $(TTF)_4FeCl_3{\cdot}CH_3OH,\;(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$ were prepared from reactions of the TTF (tetrathiafulvalene) and metal halides. The compounds were characterized by spectroscopic (UV,IR, EPR and XPS) methods, magnetic susceptibility and electrical conductivity measurements. The d.c electrical conductivities of the pressed pellets are in the order of $10^{-1}-10^{-3} Scm^{-1}$, which lies in the range of semiconductor region at room temperature. It means that the partially ionized TTF has stacked in low-dimensional chain in each compound. Spectroscopic properties also indicate that TTF molecules are partially ionized and charge transfer has occurred from (TTF)n to Fe(III) center in $(TTF)_4FeCl_3{\cdot}CH_3OH$ whereas to the $-SbX_4^-$ entity in $(TTF)_4SbCl_4\;and\;(TTF)_5(SbBr_4)_2{\cdot}CH_3COCH_3$. The EPR g values are consistent with TTF radical formation and EPR linewidths suggest the delocalization of unpaired electrons along TTF stacks. A signal arised from metal (Fe and Sb) ions were not detected in EPR spectra, indicating that metal ion is in the diamagnetic state in each compound. The diamagnetic state was also examined by the magnetic susceptibility measurement. The magnetic properties reveal the significant interaction between the $TTF^+$ radical cations in the stacks. The oxidation state of metal ions was also investigated by XPS spectra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.629-637
• /
• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Publications of The Korean Astronomical Society
• /
• v.27 no.4
• /
• pp.281-284
• /
• 2012

We utilize AKARI's slitless spectroscopic capability to detect the $3.3{\mu}m$ polycyclic aromatic hydrocarbons (PAHs) emission and measure star formation (SF) activity for various AKARI programs. First, we obtain $2{\sim}5{\mu}m$ spectra of 20 flux-limited galaxies with mixed SED classes in order to calibrate the $3.3{\mu}m$ PAH luminosity ($L_{PAH3.3}$) as a star formation rate (SFR) indicator. We find that $L_{PAH3.3}$ correlates with $L_{IR}$ as well as with the $6.2{\mu}m$ PAH luminosity ($L_{PAH6.2}$). The correlations does not depend on SED classes. We find that ULIRGs deviate from the correlation between PAH luminosities and $L_{IR}$, while they do not for the correlation between PAH luminosities. We suggest possible effects to cause this deviation. On the other hand, how AGN activity is linked to SB activity is one of the most intriguing questions. While it is suggested that AGN luminosity of quasars correlates with starburst (SB) luminosity, it is still unclear how AGN activity is connected to SF activity based on host galaxy properties. We are measuring SFRs for the LQSONG sample consisting of reverberation mapped AGNs and PG-QSOs. This is an extension of the ASCSG program by which we investigated the connection between SB and AGN activities for Seyferts type 1s at z ~ 0.36. While we found no strong correlation between $L_{PAH3.3}$ and AGN luminosity for these Seyferts 1s, $L_{PAH3.3}$ measured from the central part of galaxies correlates with AGN luminosity, implying that SB and AGN activities are directly connected in the nuclear region.

• Journal of Plant Biotechnology
• /
• v.50
• /
• pp.97-107
• /
• 2023

Malaria remains to be one of the most severe global public health concerns. Traditionally, Aspilia Africana and Warburgia ugandensis have been used to treat malaria in several African countries for millennia. In the current study, A. africana calli (AaC), A. africana in vitro roots (AaIR), A. africana wild leaf (AaWL), and W. ugandensis stem bark (WuSB) were dried and pulverized. Fourier transform near-infrared spectroscopy was used to analyze the powdered samples, while 80% ethanolic extracts of each sample were assayed for antiplasmodial activity (against Plasmodium falciparum strains DD2 (chloroquine-resistant) and 3D7 (chloroquine-sensitive)) and cytotoxicity. WuSB showed the highest antiplasmodial activity (IC₅₀ = 1.57 ± 0.210 ㎍/ml and 8.92 ± 0.365 ㎍/ml against P. falciparum 3D7 and DD2, respectively) and selectivity indices (43.90 ± 7.914 and 7.543 ± 0.051 for P. falciparum 3D7 and DD2, respectively). The highest total polyphenolic contents (total phenolic and flavonoid contents of 367.9 ± 3.55 mg GAE/g and 203.9 ± 1.43 mg RUE/g, respectively) were recorded for WuSB and the lowest were recorded for AaC. The antiplasmodial activities of the tested plant tissues correlated positively with total polyphenolic content. The high selectivity indices of WuSB justify its traditional applications in treating malaria and present it as a good candidate for discovering new antimalarial compounds. We recommend elicitation treatment for AaIR, which showed moderate antiplasmodial activity against P. falciparum DD2, to increase its secondary metabolite production for optimal antimalarial activity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.305-305
• /
• 2011

Type-II 반도체 나노 구조는 그것의 band alignment 특성으로 인해 광학 소자에 다양한 응용성을 가진다. 특히, 대표적인 Type-II 반도체 나노 구조인 InSb/InAs 양자점의 경우, 약 3~5 ${\mu}m$의 mid-infrared 영역의 spectral range를 가지므로, 장파장을 요하는 소자에 유용하게 적용될 수 있다. 또한, Type-II 반도체 나노 구조의 밴드 구조를 staggered gap 혹은 broken gap 구조로 조절함으로써 infrared 영역 광소자의 전자 구조를 유용하게 바꾸어 적용할 수 있다. 최근, GaSb wafer 위에 InSb/InAsSb 양자점을 이용하여 cutoff wavelength를 6 ${\mu}m$까지 연장한 IR photodetector의 연구도 보고되고 있다. 하지만, GaSb wafer의 경우 그것의 비용 문제로 인해 산업적 적용이 쉽지 않다는 문제가 있다. 이러한 문제를 해결하기 위해 GaAs wafer와 같은 비용 효율이 높은 wafer를 사용한 연구가 필요할 것이다. 본 연구에서는 Molecular Beam Epitaxy(MBE)를 이용하여 undoped InAs wafer 와 semi-insulating GaAs wafer 상에 InSb 양자 구조를 형성한 결과를 보고한다. InSb 양자 구조는 20층 이상의 다층으로 형성되었고, 두 가지 경우 모두 400${\AA}$ spacer를 사용하였다. 단, InAs wafer 위에 형성한 InSb 양자 구조의 경우 InAs spacer를, GaAs wafer 위에 형성한 양자 구조의 경우 InAsSb spacer를 사용하였다. GaAs wafer 위에 양자 구조를 형성한 경우, InSb 물질과의 큰 lattice mismatch 차이 완화 뿐 아니라, type-II 밴드 구조 형성을 위해 1 ${\mu}m$ AlSb 층과 1 ${\mu}m$ InAsSb 층을 GaAs wafer 위에 미리 형성해 주었다. 양자 구조 형성 방법도 두 종류 wafer 상에서 다르게 적용되었다. InAs wafer 상에는 주로 일반적인 S-K 형성 방식이 적용된 것에 반해, GaAs wafer 상에는 migration enhanced 방식에 의해 양자 구조가 형성되었다. 이처럼 각 웨이퍼에 대해 다른 성장 방식이 적용된 이유는 InAsSb matrix와 InSb 물질 간의 lattice mismatch 차이가 6%를 넘지 못하여 InAs matrix에 비해 원하는 양자 구조 형성이 쉽지 않기 때문이다. 두 가지 경우에 대해 AFM과 TEM 측정으로 그 구조적 특성이 관찰되었다. 또한 infrared 영역의 소자 적용 가능성을 보기 위해 광학적 특성 측정이 요구된다.

• Proceedings of the KIEE Conference
• /
• 1992.07b
• /
• pp.816-819
• /
• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.3
• /
• pp.133-138
• /
• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.166-166
• /
• 2007

PRAM (phase-change random access memory)은 전류 펄스 인가에 따른 기록매질의 비정질-결정질 간 상변화와 그에 동반되는 저항변화를 이용하는 차세대 비휘발성 메모리 소자로서 연구되어지고 있다. 본 논문에서는 $(Ge_2Sb_2Te_5)_{1-x}Se_x$ (x=0,0.05,0.1,0.15) 조성에 대한 벌크 및 박막시료를 제작하고 각 조성에 대한 상변화 특성을 분석하였다. XRD를 통해 열처리 온도에 따른 구조적 분석을 실시하였고 UV-Vis-IR spectrophotometer를 사용하여 박막의 광학적 특성을 분석하였다. 또한 각 조성의 결정화 속도를 비교하기 위해 static tester를 사용하여 레이저 펄스 시간에 대한 반사도 변화를 측정하였고 DSC를 통해 결정화 온도를 측정하였다.

• Analytical Science and Technology
• /
• v.7 no.3
• /
• pp.293-299
• /
• 1994

Fifty ancient Korean coins originated in Choson period have been determined for 11 elements such as Sn, Fe, As, Au, Co, Sb, Ir, Os, Ru and Ni by destructive and non-destructive neutron activation analysis as well as for 3 elements such as Cu, Pb and Zn by atomic absorption spectroscopy. The multivariate data have been analyzed by principal component mapping method. The spread of sample points in the eigenvector polt has been attributed to common origins of some elements.