• Proceedings of the KWS Conference
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• 2002.10a
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• pp.176-180
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• 2002

During the last two decades the laser beam has progressed from a sophisticated laboratory apparatus to an adaptable and viable industrial tool. Especially, in its welding mode, the laser offers high travel speed, low distortion, and narrow fusion and heat-affected zones (HAZ). The principal obstacle to selection of a laser processing method in production is its relatively high equipment cost and the natural unwillingness of production supervision to try something new until it is thoroughly proven. The major objective of this work is focused on the combined features of gas tungsten arc and a low-power cold laser beam. Although high-power laser beams have been combined with the plasma from a gas tungsten arc (GTA) torch for use in welding as early as 1980, recent work at the Ohio State University has employed a low power laser beam to initiate, direct, and concentrate a gas tungsten arcs. In this work, the laser beam from a 7 watts carbon monoxide laser was combined with electrical discharges from a short-pulsed capacitive discharge GTA welding power supply. When the low power CO laser beam passes through a special composition shielding gas, the CO molecules in the gas absorbs the radiation, and ionizes through a process known as non-equilibrium, vibration-vibration pumping. The resulting laser-induced plasma (LIP) was positioned between various configurations of electrodes. The high-voltage impulse applied to the electrodes forced rapid electrical breakdown between the electrodes. Electrical discharges between tungsten electrodes and aluminum sheet specimens followed the ionized path provided by LIP. The result was well focused melted spots.

• Food Science and Preservation
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• v.23 no.6
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• pp.772-777
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• 2016

Activity of the noncontacted low temperature atmospheric pressure surface discharged plasma (LASDP) converts stable gas to ionized gas known as discharge or plasma. This ionized gas exhibits the antimicrobial activity. We examined the effects of 3 different storage treatments for 80 days on 'Setoka' : ambient storage (AS), low-tempperature storage (LTS), and low-temperature atmospheric pressure plasma+low-tempperature storage (PLTS). Total soluble solids showed no the significant differences between the 3 treatments. Acidity gradually decreased, and was 0.5% under AS after 30 days of storage. Fruit firmness increased by a few percent until 40 days of storage. Weight loss in AS was higher than for other treatments. After 80 days of storage, the decay ratio was significantly low in PLTS treatment: (AS, 50.5%; LTS, 5.6%; PLTS, 1.9%). In AS treatment, 73% of the rotten fruits were infected particularly with green and blue mold; however, only 1% of the rotten fruits were infected in case of PLTS treatment. In conclusion, LASDP treatment can prevent postharvest decay caused by fungi and is an efficacious alternative extending the shelf-life of citrus fruits.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.42.3-43
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• 2015

Using a large sample of 32,000 type 2 AGNs out to z = 0.2, we present the statistical results on the ionized gas outflows, based on the analysis of the velocity shift of narrow emission lines with respect to the systemic velocity measured from the stellar absorption lines. Considering the projection effect, the fraction of type 2 AGNs with the [O III] velocity offset, which is ~50%, is comparable to that of type 1 AGNs. The velocity dispersion of [OIII] is typically larger than that of Ha, suggesting that outflow is prevalent in type 2 AGNs. A weak correlation of the OIII luminosity with velocity shift and velocity dispersion indicates that outflow velocity is stronger for higher luminosity AGNs. Based on our 3-D biconical outflow models with simple assumptions on the velocity structure, we simulate the projected 2-D velocity and velocity dispersion maps, which are spatially integrated to reproduce the measurements of SDSS AGNs. By comparing the distribution of the measured velocity and velocity dispersion of OIII, with the model grids, we constrain the intrinsic outflow velocities. The outflow velocity ranges from a few hundreds to a thousand km/s, implying a strong feedback to ISM.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Journal of the Korean Society of Safety
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• v.20 no.1 s.69
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• pp.94-100
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• 2005

The plasma, ionized gas state, is generally composed as the 4th state in the universe. Generating the plasma artificially has been studied by spending energy and it has been applied so much in human's life. There are several merits to modify the surface of polymer using plasma. Above all, plasma maintains the properties of polymer itself, but changes the properly of polymer surface only. Also, it is the environmentally fraternized because there are no waste processing from organic solvent. Furthermore, it is possible that continuous automated-processing in case of high-pressure plasma. Therefore, we have tried the reforming of surface to rise the adhesive strength between the material of polymer, and have experimented rising the adhesive strength through peel strength by virtue of processing time and using gas, of course, confirmed the change of polymer surface through measuring the contact angle analysis and scanning electron microscopy(SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.201-203
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• 2001

This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in Xenon gas calculated for range of E/N values from 0.01~500[Td] at the temperature is $300[^{\circ}K]$ and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. it has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with experimental data by L. S. Frost and A. V. Phelps for a range of E/N. The swarm parameter from the study are expected to server as a critical test of current theories of low energy scattering by atoms and molecules.

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.