• Asian Journal of Atmospheric Environment
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• v.9 no.2
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• pp.158-164
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• 2015

The estimation of the concentration of hydroxyl radical (OH) in the atmosphere is essential to build atmospheric models and to understand the mechanisms of the reactions involved in OH. Although water vapor is one of the most abundant species in the troposphere, only a few studies have been performed for the reaction of OH and water vapor. Here I demonstrate an ab initio study on the complex forming reation of OH with $H_2O$ in the gas phase performed based on density functional theory to calculate the reaction rate and the energy states of the reactant and the OH-$H_2O$ complex. The structure of the complex, which belongs to the Cs point group, was optimized at global minima. The transition state was not found at the B3LYP and MP2 levels of theory. Rate constants of the forward and the reverse reactions were calculated as $1.1{\times}10^{-16}cm^3\;molecule^{-1}\;s^{-1}$ and $5.3{\times}10^9\;s^{-1}$, respectively. The extremely slow rates of complex forming reaction and the resulting hydrogen atom exchange reaction of OH and $H_2O$, which are consistent with experimentally determined values, imply a negligible possibility of a change in OH reactivity through the title reaction.

• Radiation Oncology Journal
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• v.7 no.2
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• pp.299-303
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• 1989

Authors have developed highly reproducible calibration method for the Micro-Selectron HDR Ir-192 system (Nucletron, Motherland). The new jig has a 10cm radius circular hole in the $30cm{\times}30cm{\times}0.2cm$ acrylic plate, and 5F flexible bronchial tubes are attached around the hole. The source moves along the circle in the tubes and the ionization chamber is placed verticaly at the center of the circular hole (center of the jig). Dose distribution near the center was derived theoretically, and measured with the film dosimetry system. Theoretical calculation and measurement show the error margin below $0.1\%$ for 1mm or 2mm position deviation. We have measured at 12 and 24 points of circle with 1, 6, 11 and 21 second dwell time of source in order to calculate the activity of the source. Measurements have been repeated daily for 50 days. The accuracy and the reproducibility are below $1\%$ error margin. The half life of the source from our measurement is estimated $73.4\pm0.4$ days.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Corrosion Science and Technology
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• v.18 no.3
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• pp.78-85
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• 2019

The International Maritime Organization (IMO) will administer a new 0.5% global sulfur cap on fuel content from 1 January 2020, lowering from the present 3.5% limit. Seawater $SO_x$ (sulfur oxide) scrubbing is especially spray scrubbing and a promising alternative to complying with the IMO regulation. However, the ionization of $SO_2$ (sulfur dioxide) and the $H_2SO_4$ (sulfuric acid) formed from $SO_3$ (sulfur trioxide) is proposed to accelerate corrosion of the internal seawater pipe. Apparently, the corrosion of the scrubber seawater piping system occurs in a severe and frequent manner. Hence, in this study, electrochemical measurement and weight loss of carbon steel (used as seawater pipe in most of the ships) in diluted sulfuric acid solution were investigated to determine corrosion rate, corrosion current density, corrosion potential, electrochemical behavior, and impressed-current density. Accordingly, the corrosion rate of carbon steel sheet in various diluted sulfuric acid solutions was observed to be greater than that in natural seawater, thus suggesting the fundamental data to deal with corrosion problems in scrubber seawater pipe.

• Journal of Surface Science and Engineering
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• v.56 no.6
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• pp.386-392
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• 2023

In this work, we describe the reduction kinetics of gold nanoparticles synthesized by plasma discharge in aqueous solutions with varied voltages and precursor (HAuCl₄) concentrations. The reduction rate of [AuCl₄]^- was determined by introducing NaBr to the gold colloidal solution synthesized by plasma discharge, serving as a catalyst in the reduction process. We observed that [AuCl₄]^- was completely reduced when its characteristic absorption peak at 380 nm disappeared, indicating the absence of [AuCl₄]^- for ligand exchange with NaBr. The reduction rate notably increased with the rise in discharge voltage, attributable to the intensified plasma generated by ionization and excitation, which in turn accelerated the reduction kinetics. Regarding precursor concentration, a lower concentration was found to retard the reduction reaction, significantly influencing the reduction kinetics due to the presence of active H⁺ and H radicals. Therefore, the production of strong plasma with high plasma density was observed to enhance the reduction kinetics, as evidenced by optical emission spectroscopy.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.11-11
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• 2003

전자현미경내에서 일부 무기 및 금속 시료들은 전자빔 조사에 의해 시료구조가 손상되거나 비정질화 또는 상전이 등과 같은 구조전이 현상들을 겪게 된다. 즉, 전자빔 조사에 의해 시료는 원자간 결합이 끊어져 나타나는 Knock-on damage, 시료 원자 주위의 전자들과의 상호 작용에 의해 나타나는 Ionization damage, 빔 에너지의 시료온도 상승 기여에 의한 Radiolysis damage 등의 현상들을 경험하게 된다. 이러한 현상은 전자현미경의 가속전압, 전자밀도, 시료 조건 등에 따라 그 지배기구가 다르며 동일한 시편이라도 시료의 두께와 시편온도를 결정하는 전자빔 조사선량에 따라 그 양상과 전이 속도가 달라진다. 본 연구에서는 전자빔 조사에 의해 구조 전이를 겪게 되는 대표적 무기수화물의 하나인 Cibbsite에 대해 전자빔 조사효과에 대한 정량적 고찰을 에너지 여과 투과전자현미경 (EF-TEM)을 이용하여 시도하였다. 전자빔 조사는 120분까지 실시하였고 각 시간별로 에너지 필터와 Imaging plate를 이용하여 Gibbsite의 회절패턴과 미세조직 변화를 기록하였다 빔조사 시엔 illumination angle을 1.25mrad(Dose rate : 334 × 10³ e/sup -//sec·n㎡)으로 하였으며 사진기록 시엔 최소 illumination angle인 0.04mrad(Dose rate : 413 e/sup -//sec·n㎡)을 사용하였다. 시료의 관찰방향은 [001]방향이고 관찰시료두께는 약 50nm로 평가되었으며 시료의 화학변화는 EDS를 이용하여 분석하였다. 회절자료의 Intensity는 ELD/CRISP 프로그램을 이용하였으며 빔조사선량은 평행조사빔이 시료와 상호 작용하는 면적과 상호작용하지 않을 때의 빔을 회절모드에서 faraday cup으로 측정한 빔전류로 부터 계산하였다. Gibbsite에 대한 전자빔 조사 시 1분 이내에 급격한 Hydroxyl Ion(OH-)의 이탈로 인해 Cibbsite의 구조는 거시적 비정질화가 되며 시간증가에 따라 χ-alumina → ν-alumina → σ-alumina or δ-alumina의 순으로 상전이를 겪는다. 전자빔 조사 시 관찰된 회절자료의 가시적 변화를 통해 illumination angle 1.25mrad(Dose rate : 334 × 10³ e/sup -//sec·n㎡)일 경우 약 3초 이내에 비정질화가 시작됨을 알 수 있었고 이는 약 1 × 10/sup 6/ e/sup -//sec·n㎡ 의 전자선량에 해당되며 이를 기준으로 각각의 illumination angle에 대한 임계전자선량을 평가할 수 있었다. 실질적으로 Cibbsite와 같은 무기수화물의 직접가열실험 시 전자빔 조사에 의해 야기되는 상전이 영향을 배제하고 실험을 수행하려면 illumination angle 0.2mrad (Dose rate : 8000 e/sup -//sec·n㎡)이하로 관찰하고 기록되어야 함을 본 자료로부터 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.374-380
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• 1998

Radical and ion densities in a $CF_4$plasma have been calculated as a function of input power density, gas pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and $CF^+$ become dominant neutral and ionic radical at the high power condition. As the pressure increase, ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of $CF_4$feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of $CF_4$monotonically decreases with flow rate, which results in increase in $CF_3$and decrease in CF density. The calculation results show that the $SiO_2$etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• The Journal of Korean Society for Radiation Therapy
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• v.22 no.2
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• pp.123-129
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• 2010

Purpose: The purpose of this study was to evaluate dosimetric characteristics of Optically stimulated luminescent dosimeters (OSLD) for dosimetry Materials and Methods: InLight/OSL $NanoDot^{TM}$ dosimeters was used including $Inlight^{TM}MicroStar$ Reader, Solid Water Phantom, and Linear accelerator ($TRYLOGY^{(R)}$) OSLDs were placed at a Dmax in a solid water phantom and were irradiated with 100 cGy of 6 MV X-rays. Most irradiations were carried out using an SSD set up 100 cm, $10{\times}10\;cm^2$ field and 300 MU/min. The time dependence were measured at 10 minute intervals. The dose dependence were measured from 50 cGy to 600 cGy. The energy dependence was measured for nominal photon beam energies of 6, 15 MV and electron beam energies of 4-20 MeV. The dose rate dependence were also measured for dose rates of 100-1,000 MU/min. Finally, the PDD was measured by OSLDs and Ion-chamber. Results: The reproducibility of OSLD according to the Time flow was evaluated within ${\pm}2.5%$. The result of Linearity of OSLD, the dose was increased linearly up to about the 300 cGy and increased supralinearly above the 300 cGy. Energy and dose rate dependence of the response of OSL detectors were evaluated within ${\pm}2%$ and ${\pm}3%$. $PDD_{10}$ and PDD20 which were measured by OSLD was 66.7%, 38.4% and $PDD_{10}$ and $PDD_{20}$ which were measured by Ion-chamber was 66.6%, 38.3% Conclusion: As a result of analyzing characteration of OSLD, OSLD was evaluated within ${\pm}3%$ according to the change of the time, enregy and dose rate. The $PDD_{10}$ and $PDD_{20}$ are measured by OSLD and ion-chamber were evaluated within 0.3%. The OSL response is linear with a dose in the range 50~300 cGy. It was possible to repeat measurement many times and progress of the measurement of reading is easy. So the stability of the system and linear dose response relationship make it a good for dosimetry.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.317-328
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• 2017

This paper presents design and specific absorption rate analysis of a 2.4 GHz wearable patch antenna on a conventional and electromagnetic bandgap (EBG) ground planes, under normal and bent conditions. Wearable materials are used in the design of the antenna and EBG surfaces. A woven fabric (Zelt) is used as a conductive material and a 3 mm thicker Wash Cotton is used as a substrate. The dielectric constant and tangent loss of the substrate are 1.51 and 0.02 respectively. The volume of the proposed antenna is $113{\times}96.4{\times}3mm^3$. The metamaterial surface is used as a high impedance surface which shields the body from the hazards of electromagnetic radiations to reduce the Specific Absorption Rate (SAR). For on-body analysis a three layer model (containing skin, fats and muscles) of human arm is used. Antenna employing the EBG ground plane gives safe value of SAR (i.e. 1.77W/kg<2W/kg), when worn on human arm. This value is obtained using the safe limit of 2 W/kg, averaged over 10g of tissue, specified by the International Commission of Non Ionization Radiation Protection (ICNIRP). The SAR is reduced by 83.82 % as compare to the conventional antenna (8.16 W/kg>2W/kg). The efficiency of the EBG based antenna is improved from 52 to 74 %, relative to the conventional counterpart. The proposed antenna can be used in wearable electronics and smart clothing.