• 전기학회논문지P
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• 제60권1호
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• pp.27-31
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• 2011

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The electron energy distribution function has been analysed in $CF_4$ at E/N=5, 10, 100, 200 and 300[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

• 전자공학회논문지A
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• 제33A권4호
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• pp.121-128
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• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.329-333
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• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• 대한화학회지
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• 제59권6호
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• pp.541-544
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• 2015

• 한국환경과학회지
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• 제21권9호
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• pp.1163-1169
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• 2012

Destruction and removal efficiency (DRE) of $SF_6$ was tested with low degrees of ionization. The applied dose of ionization energy varied from 63.70 to 212.34 kGy. The initial concentration and flow rate of $SF_6$ gas were 1,000 ppm and 50L/min, respectively. In order to increase the DRE, injection of conditioning agent ($H_2$) were conducted. The DRE of $SF_6$ increased about 2 times with injection of $H_2$ gas.

• Bulletin of the Korean Chemical Society
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• 제33권5호
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• pp.1561-1565
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• 2012

The structures of the four lowest alanine conformers, along with their radical cations and the effect of ionization on the intramolecular proton transfer process, are studied using the density functional theory and MP2 method. The energy order of the radical cations of alanine differs from that of the corresponding neutral conformers due to changes in the basicity of the $NH_2$ group upon ionization. Ionization favors the intramolecular proton transfer process, leading to a proton-transferred radical-cation structure, [$NH_3{^+}-CHCH_3-COO{\bullet}$], which contrasts with the fact that a proton-transferred zwitterionic conformer is not stable for a neutral alanine in the gas phase. The energy barrier during the proton transfer process is calculated to be about 6 kcal/mol.

• 대한디지털의료영상학회논문지
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• 제12권1호
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• pp.51-58
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• 2010

Ionization chambers often exhibit a stem effect, caused by interactions of radiation with air near the chamber end, or with dielectric in the chamber stem or cable. In this study measured stem effect correction factor for length of ionization chamber from medical linear accelerator recommend to with the use of stem correction method. For a model of the Farmer-type chamber, were used to calculate the beam quality correction factor. These interactions contribute to the apparent measured exposure. Additionally, it needs to consider ionization chamber use of small volume and stem effect of cable by a large field. Linear accelerator generated photons energy and increased dose repeatedly measured by using stem correction method. Stem effect was dependence of the energy and increases with photon energy conditions improved of beam quality. In conclusion, stem effect correction factor was measured within 0.4% calculated according to the exposures stem length and also supposed to determined below 1% of another stem correction method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.221-225
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• 1994

We described the impact ionization rates of electron in GaAs/AlGaAs MQH(multi- quantum well) using EMC(ensenble Monte Carlo) simulation. Hot electron energy of injected into quantum well is increasing nearly liearly due to the applied electric field to the barrier of MQM inspite of various Al mole fraction in AlGaAs or barrier width. Impact ionization rates are decreasing exponentially by increasing Al mole fraction, and they have peak vague due to the barrier width.

• 조명전기설비학회논문지
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• 제27권2호
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• pp.77-83
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• 2013

In this study, we aimed to determine the optical properties of the plasma used for the dry cleaning method. The optical properties of the atmospheric pressure plasma device were measured through the degree of ionization of hydrogen or nitrogen gas by ionized atmospheric gas. The degree of ionization of hydrogen or nitrogen is closely associated with surface modification. We observed through our experiments that argon gas, an atmospheric gas, caused an increase in the ionization of nitrogen gas, which has similar ionization energy. This type of increase in nitrogen gas ions is believed to affect surface modification. The results of our study show that the pressure of argon gas and the partial pressure of argon and nitrogen gases lead to different results. This important result shows that argon ions can affect the ionization of nitrogen gas.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 1999년도 Japanese Journal of Medical Physics
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• pp.249-252
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• 1999