• Title/Summary/Keyword: Ionization current

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Ionization of Helium Gas with a Tungsten Tip

  • Kim, Hee-Tae;Yu, Soon-Jae
    • Journal of Information Display
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    • v.10 no.1
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    • pp.45-48
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    • 2009
  • The ionization of a helium atom was investigated as a function of gas pressure, with the use of a tungsten tip. The tungsten tip, to which the external voltage was applied, was used to generate a constant electron current. The ionization current of helium gas was measured as a function of gas pressure. Effective ionization occurred in the pressure range of 0.5-20 torr when the distance between the field emission tip and the collector was 1 cm. The ionization current was linearly proportional to the voltage that was applied to the tungsten tip.

Characteristics of Impulse Discharges in Wet Soil (습한 토양의 임펄스방전특성)

  • Kim, Hoe-Gu;Lee, Bok-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.2
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    • pp.363-369
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    • 2017
  • This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

Analysis of Ionization Phenomena in Soils under Impulse Voltages (임펄스전압에 의한 토양이온화 현상의 분석)

  • Park, Geon-Hun;Kim, Hoe-Gu;Choi, Jong-Hyuk;Yang, Soon-Man;Lee, Bok-Hee
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.305-308
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    • 2008
  • This paper presents characteristics of soil ionization when high currents such as lightning and switching surge currents are injected into a grounding rod. Soil ionization phenomena are investigated by using both voltage and current signals recorded by oscilloscope. As a result, a critical electric field intensity($E_C$) for ionization is decreased with reduction of grain size. The pre-ionization resistance($R_1$) and post-ionization resistance($R_2$) at the sand with fine grain size are getting lower with increasing current magnitude. Finally, the time to ionization($t_1$) and ionization current peak($t_2$) of fine grain size are significantly shorter than those of medium grain size.

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Knock Detection Using an Ionization Probe Installed Spark Plug (이온프로브 장착 점화플러그를 이용한 노크발생 판정)

  • 한성주;이용규;민경덕;김응서
    • Transactions of the Korean Society of Automotive Engineers
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    • v.8 no.6
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    • pp.1-8
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    • 2000
  • A new method of knock detection in SI engines, using a change of ion concentration in the combustion chamber, was developed. In order to measure in-cylinder ionization current, ionization probes were installed at spark plug and cylinder head of production engine. It was found that the electric current generated by ionized gas in core burned gas region of knocking cycle is between 2 and 10 times larger than that of normal cycle, because the burned gas temperature which is the dominant parameter of a change of ion concentration increases. However, a change of ionization current in boundary region of burned gas is relatively weak. Hence a change of ion concentration in core burned gas region can be used for knock detection.

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Analysis of Soil Ionization Behaviors under Impulse Currents

  • Lee, Bok-Hee;Park, Geon-Hun;Kim, Hoe-Gu;Lee, Kyu-Sun
    • Journal of Electrical Engineering and Technology
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    • v.4 no.1
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    • pp.98-105
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    • 2009
  • This paper presents the characteristics of soil ionization for different water contents, and the parameters associated with the dynamic properties of a simple model grounding system subject to lightning impulse currents. The laboratory experiments for this study were carried out based on factors affecting the soil resistivities. The soil resistivities are adjusted with water contents in the range from 2 to 8% by weight. A test cell with a spherical electrode buried in the middle of the hemispherical container was used. As a result, the electric field intensity $E_c$ initiating ionization is decreased with the reduction of soil resistivities. Also, as the water content increased, the pre-ionization resistance $R_1$ and the post-ionization resistance $R_2$ became lower with increasing current amplitude. The time-lag to ionization $t_1$ and the time-lag to the second current peak $t_2$ at high applied voltages were significantly shorter than those of low applied voltages. It was found that the soil ionization behaviors are highly dependent on the water content and the applied voltage amplitude.

Hot carrier effects and device degradation in deep submicrometer PMOSFET (Deep submicrometer PMOSFET의 hot carrier 현상과 소자 노쇠화)

  • 장성준;김용택;유종근;박종태;박병국;이종덕
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.4
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    • pp.129-135
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    • 1996
  • In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15$\mu$m PMOSFET increases with increasing of impact ionization rate, and the impact ionization rate is a function of the gate length and gate bias voltage. Correlation between gate current and substrate current is investigated within the general framework of the lucky-electron. It is found that the impact ionization rate increases, but the device degradation is not serious with decreasing effective channel length. SCIHE is suggested as the possible phusical mechanism for enhanced impact ionization rate and gate current reduction. Considering the hot carrier induced device degradation, it has been found that the maximum supply voltage is about -2.6V for 0.15$\mu$m PMOSFET.

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Measurement of the Ionization Coefficient in Gases by the Luminous-flux Method (광속법을 이용한 기체의 전이계수 측정)

  • 백용현;하성철;이복희;김희택;김정섭
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.7
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    • pp.289-296
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    • 1985
  • The Townsend primary ionization coefficient a was measured by the luminous-flux method using the fact that the intensity of radiant light is proportional to electron density in the townsend discharge domain. The ranges of measurements were 15for He gas and 10

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Ionization Behaviors in Various Soils Subjected to Impulse Currents (임펄스전류에 의한 토양의 종류별 이온화 특성)

  • Lee, Bok-Hee;Kim, Hoe-Gu;Park, Geon-Hun;Baek, Young-Hwan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.12
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    • pp.87-94
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    • 2008
  • This parer presents the soil ionization phenomena and parameters associated to characterize the transient performances of grounding system under lightning impulse Currents. Ionization properties in occurring some soil media were experimentally investigated. The cylindrical test cell was employed in order to facilitate the analysis of soil breakdown field intensity and ionized radius. The soil breakdown field intensity, dependence of impedance on the amplitude of impulse current, V-I curves and transient impedances were discussed based on the voltage and current oscillograms. It was found that the ionization process and dynamic behaviors were strongly dependent on the types of soil and two current peaks were not observed in highly water-saturated soils. The results presented in this paper will provide useful information on the improvement of transient performance of a grounding system subjected to lightning impulse Current considering the soil ionization.

Subthreshold Characteristics of a 50 nm Impact Ionization MOS Transistor (50 nm Impact Ionization MOS 소자의 Subthreshold 특성)

  • Yoon, Jee-Young;Ryu, Jang-Woo;Jung, Min-Chul;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.105-106
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    • 2005
  • The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

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Improvements of Grounding Performances Associated with Soil Ionization under Impulse Voltages (임펄스전압에 의한 토양의 이온화에 따른 접지성능의 향상)

  • Kim, Hoe-Gu;Lee, Bok-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.12
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    • pp.1971-1978
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    • 2016
  • In this paper, electrical and physical characteristics associated with the ionization growth of soil under impulse voltages in a coaxial cylindrical electrode system to simulate a horizontally-buried ground electrode were experimentally investigated. The results were summarized as follows: Transient ground resistances decreased significantly by soil ionization. The voltage-current (V-I) curves for non-ionization in soil lined up in a straight line with the nearly same slope that is the ground resistance, but they showed a 'cross-closed loop' of ${\infty}$-shape under ionization. The conventional ground resistance and equivalent soil resistivity were inversely proportional to the peak value of injected impulse currents. On the other hand, the equivalent ionization radius and time-lag to the maximum value of ionization radius were increased with increasing the incident impulse voltages. An analysis method for the transient ground resistances of the ground electrode based on the ionization phenomena was proposed. The proposed method can be applied to analyze the transient performances of grounding systems for lightning protection in power system installations.