• 한국정밀공학회지
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• 제24권11호
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• pp.108-115
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• 2007

We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.184-188
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• 2000

We have fabricated directly-coupled single-layer second-order high-Tc SQUID gradiometer. The gradiometer consisted of 3 parallel-connected square pickup loops, and each loop was directly coupled to SQUID. YBCO thin film was deposited by pulsed laser deposition and patterned by photolithography with ion milling technique. Optimum balancing condition was achieved by varying the outer diameter of the center loop. We have investigated nearly zero response of the SQUID to uniform and 1 st-order field gradient.

• Progress in Superconductivity
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• 제3권2호
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• pp.146-150
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• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• Progress in Superconductivity
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• 제3권2호
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• pp.163-167
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• 2002

We have fabricated planar-type single-layer second-order high-Tc SQUID gradiometers. The devices consisted of symmetrically designed three parallel-connected square pickup loops that were directly coupled to the SQUID. $YBa_2$$Cu_3$$O_{7}$ film was deposited on $SrTiO_3$ substrate by a PLD system and patterned into a device by the photolithography with ion milling technique. Junctions of the SQUID were either step-edge or bicrystal type. All the structures were formed on a 10 mm $\times$ 5 mm substrate. Balancing of the gradiometer was achieved by adjusting the width of the central pickup loop. The gradiometer noise was measured both inside and outside a magnetically shielded room. Details of the results will be discussed.

• Progress in Superconductivity
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• 제1권2호
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• pp.95-98
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• 2000

We have studied critical currents of $YBa_2Cu_3O_7$ step-edge junctions with different step orientations with respect to the major axes of $SrTiO_3$ (100) substrates. The junctions were prepared by pulsed laser deposition and argon ion milling with photoresist mask. We investigated current-voltage characteristics and critical current of the junctions as a function of the angle. The junction critical current showed an angle dependent modulation with maxima near 0 or 90 degree and minima near 45 and 135 degrees. The experimental results were analyzed based on the microstructure of the junction along the step and the d-wave symmetry of $YBa_2Cu_3O_7$ superconductor.

• Progress in Superconductivity
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• 제3권1호
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• pp.60-64
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• 2001

We have studied properties of step-edge Junction prepared with crystal orientation of sapphire substrate. The Step on sapphire substrates fabricated by conventional photolithography method and Ar ion milling method. $CeO_2$ buffer layer and in-situ YBCO thin film were deposited on the stepped sapphire substrates by a pulsed laser deposition method with the predetermined optimized condition. The step angle was centre fled low angle of about $25^{\circ}$. The YBCO film thickness was varied to obtain various thickness ratios of the film to the step height in a range from 0.7 to 1.2. I-V curves of junction were showed RSJ-behavior, double junction structure, and hysteresis due to the crystal orientation of substrate.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.51-54
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.242-245
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$3O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국재료학회지
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• 제11권4호
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• pp.294-299
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• 2001

기계적 합금화 방법을 이용하여 제작한 Ni-MH 전지용 $Mg_2$Ni전극의 표면 불화처리에 대한 전기화학적 충.방전 특성이 조사되었다. 20시간 밀링을 통해 제조된 $Mg_2$Ni합금은 나노결정을 가졌으며 그 $Mg_2$Ni전극의 KOH전해질내에서 충.방전 실험 결과, 초기 방전 용량이 280mAh/g이상으로 증가하였으나 10cyc1e이내에 급격히 퇴화되었다. 전극표면에서 지속적이고 안정한 불화층 형성을 목적으로 KOH용액에 잉여의 불소이온이 첨가된 $Mg_2$Ni전극의 내구성은 크게 향상되었으며 특히 2N KF를 첨가했을 경우 전극의 내구성이 가장 크게 향상되었다. 고율 방전실험의 경우도 그 성능이 90-100mAh/g으로 유지되었다 이러한 내구성 향상의 이유는 표면에 얕고 다공성인 $Mg_2$Ni층의 형성으로 인해 퇴화의 주요인인 Mg(OH)$_2$의 생성이 억제되었기 때문이었다. Effects of the surface fluorination on the electrochemical charge-discharge properties of $Mg_2$Ni electrode in Ni-MH batteries fabricated by mechanical alloying were investigated. After 20h ball milling, Mg and Ni powder formed nanocrystalline $Mg_2$Ni. Discharge capacity of this alloy increased greatly at first one cycle, but due to the formation of Mg(OH)$_2$ passive layer, it showed a rapid degradation in alkaline solution within 10cyc1es. In case of 6N KOH +xN KF electrolyte (x = 0.5, 1, 2), a continuous and stable fluorinated layer formed by adding excess F$^{-}$ ion, increased durability of $Mg_2$Ni electrode greatly and high rate discharge capability(90-100mAh/g). 2N KF addition led to the highest durability of all tested here. The reason of the improvement is due to thin MgF$_2$, which can prevent the $Mg_2$Ni electrode from forming Mg(OH)$_2$layer that is the main cause of degradation.

• 한국자기학회지
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• 제25권4호
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• pp.117-122
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• 2015

고감도 바이오센서용 거대자기저항-스핀밸브(Giant magnetoresistance-spin valve; GMR-SV) 박막소자의 미세패턴 공정으로 인한 교환결합력과 보자력 약화 문제를 해결하고자 전자사이크로트론 공명(Electron Cyclotron Resonance) Ar-이온 밀링을 이용하여 GMR-SV 박막에 지름 $35{\mu}m$인 원형 모양의 홀(Hole)을 패턴닝 하였다. GMR-SV를 4-단자법으로 측정한 자기저항 곡선으로부터 홀 개수가 많아질수록 자기저항비와 자장감응도는 홀이 없을 때 측정된 초기값과 같은 값을 유지하였고, 교환결합세기와 보자력은 120 Oe에서 190 Oe, 10 Oe에서 41 Oe로 크게 향상되었다. 이러한 현상은 GMR-SV 박막내의 자화용이축과 같은 방향을 띄고 센싱 전류의 방향과 수직인 공간에 위치하는 용이 자구영역(Easy magnetic domain; EMD)의 역할에 기인하는 결과를 보여주었다. GMR-SV 바이오 소자 제작시 폭을 넓게 하고 소자내부에 홀의 개수를 증가시켜 발생하는 EMD 효과가 자기저항특성을 향상시킬 수 있었다.