• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.120-122
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• 2008

We have studied the tilt angle generation on the homeotropic polyimide (PI) surface using a low intensity ion beam source as a function of incident angle. An excellent LC alignment of nematic liquid crystal (NLC) on the PI surface with ion beam exposure for all incident angles was observed. The tilt angle of NLC on the homeotropic PI surface for all incident angles was from 90 to 88 degree was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of 400 eV had a tendency to increase as ion beam energy incident angle become more instance from 45 degree. Finally, a good LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.288-289
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• 2006

The tilt angle generation of nematic liquid crystal(NLC) on the homeotropic polyimide(PI) surface by the new Ion beam alignment method is studied. The tilt angle of NLC on the homeotropic PI surface for all incident angle is about 38and this has a stabilization trend. And the good LC alignment of the NLC on the PI surface by ion beam exposure of 45Incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface by ion beam exposure of 45Incident angle had a tendency to decrease as ion beam energy density increase. So we had known that pretilit angle could be controlled from verticality to horizontality.

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.498-504
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• 2006

고밀도 $CHF_3$ 플라즈마를 이용한 식각에서 photoresist(PR)의 식각속도 및 $SiO_2$의 PR에 대한 식각 선택도가 이온의 입사 각도에 따라 변화하는 특성을 관찰하였다. 플라즈마 내에 파라데이 상자를 설치하여 이온의 입사 각도를 조절하였으며, 바이어스 전압을 변화시켜 이온의 입사 에너지를 조절하였다. 대부분의 바이어스 전압에서 $SiO_2$의 식각속도는 이온입사각도가 증가함에 따라 단조 감소함에 비해 PR의 식각속도는 중간각도 영역까지 일정하다가 그 이후에 감소하기 시작하였다. 이온입사각도가 $0^{\circ}$인 조건에서의 식각속도를 기준으로 정규화된 식각속도(NER)는 $SiO_2$의 경우 cosine함수와 거의 일치하였으나 PR의 경우 중간각도영역에서 over-cosine 형태를 보였다. PR에 대한 $SiO_2$의 식각선택도는 이온입사각도에 따라 점차로 감소하였는데, 이는 PR이 $SiO_2$에 비해 중간각도에서 물리적 스퍼터링에 의해 식각 수율이 크게 증가하였기 때문이다. 또한, 바이어스 전압의 증가에 따라 PR에 대한 식각선택도는 대부분의 이온입사각도에서 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.414-414
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• 2007

In this study, Liquid Crystal (LC) alignment and tilt angle generation in Nematic Liquid Crystal (NLC) with negative dielectric anisotropy on the homeotropic PI surface with new ion beam exposure are reported. Also. high density of ion beam energy (DuoPIGatron type Ar ion gun) is used in this study. The tilt angle of NLC on the homeotropic Polyimide (PI) surface for all incident angles is measured about 38 degree and this has a stabilization trend. And the good LC alignment of NLC on the PI surface with ion beam exposure of $45^{\circ}$ incident angle was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of $45^{\circ}$ had a tendency to decrease as ion beam energy density increase. The tilt angle could be controlled from verticality to horizontality. Also, the LC aligning capabilities of NLC on the homeotropic PI surface according to ion beam energy has the goodness in case of more than 1500 eV. Finally. the superior LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved. For OCB(Optically Compensated Bend) mode driving, we can need pretilt angles control for fast response time. In this study, We success pretilt angles control. Consequently, this result can be applied for OCB mode.

• 한국표면공학회지
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• 제53권3호
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• pp.116-123
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• 2020

Ion beam irradiation induces self-organization of nanostructure on the surface of polymer film. We show that the incident angle of Ar ions on polyethylene naphthalate(PEN) film changes self-organized nanostructure. PEN film was irradiated by argon ion beams with the ion incident angle of 0°, 30°, 45°, 60°, and 80°. Nanostructure was altered from dimple to ripple structure as the angle increases. The ripple structure changed to pillar structure after 60°due to that the shallow incident angle increased the ion energy transfer per depth up to 50 eV/Å, which value could induce excessive surface heating and oligomer formation reacting as a physical mask for anisotropic etching. And quantitative analysis of the nanostructures was adapted by using ABC model and fractal dimension theory.

• Applied Science and Convergence Technology
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• 제27권1호
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• pp.19-22
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• Applied Science and Convergence Technology
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• 제27권2호
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• pp.26-29
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• 2018

The ion energy and angle distributions (IEADs) in the DC magnetron sputtering systems are investigated for the variation of gas pressure using particle-in-cell simulation. Even for the condition of collisionless ion sheath at low pressure, it is possible to change the IEAD significantly with the change of gas pressure. The bombarding ions to the target with low energy and large incident angle are observed at low pressure when the sheath voltage drop is low. It is because the electron transport is hindered by the magnetic field at low pressure because of few collisions per electron gyromotion while the ions are not magnetized. Therefore, the space charge effect is the most dominant factor for the determination of IEADs in low-pressure magnetron sputtering discharges.

• 전자공학회논문지D
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• 제35D권12호
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• pp.59-67
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• 1998

본 논문에서는 몬테카를로 방식을 사용하여 이온의 에너지에 대한 타겟 원자의 스퍼터율(Sputter Yield), 이온의 주입 각도에 대한 스퍼터율, 이온의 주입에 따른 타겟 원자의 발산 분포를 3차원으로 시뮬레이션 하였다. 중(중)이온으로 (Ar/sup +/)을 사용하였고, 경(輕)이온으로 (H/sup +/)을 사용하여 10 eV에서 100 KeV 영역의 에너지에 따른 스퍼터율을 계산하였다. 또한, 스퍼터 타겟 물질로서 Cu, Al을 사용하여 계산하였고, 실험치와 일치함을 확인하였다. 스퍼터율은 입사 이온의 에너지가 증가함에 따라 증가하는 경향을 보이지만, 임계점 이후에는 점차적으로 감소하는 경향을 보였다. 중이온에 의한 스퍼터에서는 임계점이 10 KeV 영역이었고, 경이온에 의한 스퍼터에서는 1 KeV 이하 영역이었다. 또한, 이온의 주입 각도에 따라서 타겟의 스퍼터율은 점차적으로 증가하였고, 68° 부근에서 최대 스퍼터율을 기록하였다. 이온의 주입 각도에 따른 타겟 원자의 분포도에서는 각도가 커짐에 따라서 타겟 표면 법선 방향으로 방출되는 원자의 수가 많아짐을 확인하였다. 본 연구에서는, CRAY T3E 슈퍼컴퓨터에서 시뮬레이션을 수행하였으며, 구현된 몬테카를로 스퍼터 시뮬레이터의 GUI(Graphic User Interface) 환경을 구축하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 한국수소및신에너지학회논문집
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• 제12권1호
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• pp.51-63
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• 2001

In this paper molecular dynamics simulations were employed to investigate the structural and dynamic properties of hydrogen ions impacted on the Ni (100) surface with the $45^{\circ}$ incident angle. The initial kinetic energies of the hydrogen ion range from 100 to 1,600 eV. Together with the trajectory visualization of hydrogen ions, we computed scattering and penetration yields, mean energies and angles, and probability and energy distributions as a function of longitudinal and azimuthal directions. In the case of lower energy scattering ions, the multiple collision effects were found to be important to the third layers or lower. For higher energy penetrating ions, compared with the normal incident angle, it was significant the effective channeling effects through the Ni layers and the angle dependencies were indicated both in the longitudinal and the azimuthal angle directions.