• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.95-100
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• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• 한국표면공학회지
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• 제39권5호
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• pp.235-239
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• 2006

The aluminum nitride(AlN) layer on Al7075 substrate has been formed through nitrogen ion implantation process. The implantation process was performed under the conditions : 100 keV energy, total ion dose up to $2{\times}10^{18}\;ions/cm^2$. XRD analysis showed that aluminum nitride layers were formed by nitrogen implantation. The formation of Aluminum nitride enhanced surface hardness up to 265HK(0.02 N) from 150HK(0.02 N) for the unimplanted specimen. Micro-Knoop hardness test showed that wear resistance was improved about 2 times for nitrogen implanted specimens above $5\;{\times}\;10^{17}\;ions/cm^2$. The friction coefficient was measured by Ball-on-disc type wear tester and was decreased to 1/3 with increasing total nitrogen ion dose up to $1\;{\times}\;10^{18}ions/cm^2$. The enhancement of mechanical properties was observed to be closely associated with AlN formation. AES analysis showed that the maximum concentration of nitrogen increased as ion dose increased until $5\;{\times}\;10^{17}\;ions/cm^2$.

• 한국결정성장학회지
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• 제10권4호
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• pp.324-329
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• 2000

상온에서 $Cs^+$ ion sputtering에 의해 발생된 탄소 음이온 빔과 Kaufmann type ion source를 이용하여 발생된 수소 양이온 빔을 Si기판 위에 동시에 증착함으로써 얻어지는 DLC 박막의 특성을 분석하여 DLC 박막의 증착에 미치는 수소 이온의 영향을 관찰하였다. 수소 가스의 flow rate을 0 sccm부터 12 sccm까지 변화 시킴에 따라 박막 내에 포함되는 수소의 양이 증가하였으며, 수소의 증가에 따라 박막 내에 $sp^2$구조가 증가하는 것을 알 수 있었다. 수소에 의한 $sp^2$결합이 증가되는 현상은 증착시 박막 내에 주입되는 수소의 양이 CVD에 비해 매우 적은 양이지만, 상대적으로 높은 에너지를 지니고 기판에 충돌하기 때문에 물리적 에너지 전달 효과가 DLC 박막의 형성에 크게 작용하였음을 알 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.22-27
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• 2013

Detailed study on how the plasma process during the sidewall spacer formation suppresses the formation of silicide is done. In non-patterned wafer test, it is found that both fluorocarbon reactive ion etch (RIE) and TEOS plasma-enhanced deposition processes modify the Si surface so that the silicide reaction is chemically inhibited or suppressed. In order to investigate the cause of the chemical modification, we analyze the elements on the silicon surface through Auger Electron Spectroscopy (AES). From the AES result, it is found that the carbon induces chemical modification which blocks the reaction between silicon and nickel. Thus, protecting the surface from the carbon-containing plasma process prior to nickel deposition appears critical in successful silicide formation.

• 한국표면공학회지
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• 제57권2호
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• pp.115-124
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• 2024

In advancing Li-ion battery (LIB) technology, the solid electrolyte interface (SEI) layer is critical for enhancing battery longevity and performance. Formed during the charging process, the SEI layer is essential for controlling ion transport and maintaining electrode stability. This research provides a detailed analysis of how vinylene carbonate (VC) influences SEI layer formation. The integration of VC into the electrolyte markedly improved SEI properties. Moreover, correlation analysis revealed a connection between electrolyte decomposition and battery degradation, linked to the EMC esterification and dicarboxylate formation processes. VC facilitated the formation of a more uniform and chemically stable SEI layer enriched with poly(VC), thereby enhancing mechanical resilience and electrochemical stability. These findings deepen our understanding of the role of electrolyte additives in SEI formation, offering a promising strategy to improve the efficiency and lifespan of LIBs.

• 한국진공학회지
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• 제6권4호
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• pp.326-336
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• 1997

트랜지스터의 소오스/드레인 접합 특성에 가장 큰 영향을 미치는 인자는 이온 주입 시 발생한 실리콘 내에 발생한 결합이라는 사실에 착안하여, 기존 소오스/드레인 접합 형성 공정과 다른 새로운 방식을 도입하여 이온 주입에 의해 생긴 결함의 제어를 통해 고품질 초 저접합 $p^+$-n접합을 형성하였다. 기존의 $p^+$소오스/드레인 접합 형성 공정은 $^{49}BF_2^+$ 이온 주입 후 층간 절연막들인 TEOS(Tetra-Ethyl-Ortho-Silicate)막과 BPSG(Boro-Phospho-Silicate-Glass)막을 증착 후 BPSG막 평탄화를 위한 furnace annealing 공정으로 진행된다. 본 연구에서는 이러한 기존 공정과는 달리 층간 절연막 증착 전 저온 RTA첨가 방법, $^{49}BF_2^+$와 $^{11}B^+$ 을 혼합하여 이온 주입하는 방법, 그리고 이온 주입 후 잔류 산화막을 제거하고 MTO(Medium temperature CVD oxide)를 증착하는 방법을 제시하 였으며, 각각의 방법은 모두 이온 주입에 의한 실리콘 내 결합 농도를 줄여 기존의 방법보 다 더 우수한 양질의 초 저접합을 형성할 수 있었다.

• 한국진공학회지
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• 제4권S2호
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• pp.115-130
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• 1995

In order to produce Cu nanocrystallite in silicon wafer, the implantation technique was used. The samples of silicon (100) wafers were implanted by $Cu^+$ ions at 100 keV and with varying the doses at room temperature. Post-annealing was performed at $800^{\circ}C$ with Ar environment. To investigate the formation of Cu nanocrystallite with ion doses and growth process by thermal annealing, SIMS and HRTEM(high resolution transmission electron microscopy)spectra were studied.

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.701-707
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• 2004

High aspect ratio silicon structure through deep silicon etching process have become indispensable for advanced MEMS applications. In this paper, we present the results of modified Bosch process to obtain anisotropic silicon structure with conventional Inductively Coupled Plasma (ICP) etcher instead of the expensive Bosch process systems. In modified Bosch process, etching step ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) step time is much longer than commercialized Bosch scheme and process transition time is introduced between process steps to improve gas switching and RF power delivery efficiency. To optimize process parameters, etching ($SFsub6$) / sidewall passivation ($Csub4Fsub8$) time and ion energy effects on etching profile was investigated. Etch profile strongly depends on the period of etch / passivation and ion energy. Furthermore, substrate temperature during etching process was found to be an important parameter determining etching profile. Test structures with different pattern size have been etched for the comparison of the aspect ratio dependent etch rate and the formation of silicon grass. At optimized process condition, micropatterns etched with modified Bosch process showed nearly vertical sidewall and no silicon grass formation with etch rate of 1.2 ${\mu}{\textrm}{m}$/ min and the size of scallop of 250 nm.

• 대한환경공학회지
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• 제31권8호
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• pp.627-634
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• 2009

본 연구는 염화 이온 ($Cl^-$)을 전해질로 이용하는 전기화학적 공정에서 생성되는 염소산화부산물인 클로레이트 ($ClO_3\;^-$, 염소산염)의 생성 메커니즘을 알아보기 위해 수행되었다. 우선, pH 및 초기농도에 따른 생성 특성을 살펴보았으며, 유리염소 생성과의 관련성 및 오존, OH 라디칼 등의 혼합산화제의 영향을 간접 평가하여 클로레이트의 생성 메커니즘을 구체화하였다. 그 결과, 클로레이트의 생성은 유리염소 (HOCl/$OCl^-$)의 전기화학적 반응을 주된 반응으로 하며, 염화 이온의 직접 양극산화 반응 및 OH 라디칼에 의한 경로가 있음을 확인하였다. 이어서 생성된 클로레이트가 퍼클로레이트로 산화되는 반응도 볼 수 있었다. 또한, 전극 간격에 따른 생성 농도를 유리염소 생성과 함께 평가하여, 유리염소 생성 효율은 극대화 시키되 클로레이트의 발생을 최소화 할 수 있는 최적조건을 찾는 방안을 제시하였다.