• Journal of Environmental Health Sciences
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• v.32 no.4 s.91
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• pp.359-372
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• 2006

In order to investigate the daily deposition characteristics of water-soluble inorganic components in airborne deposit on the Iksan, deposition samples were collected using a deposition gauge from October 16 to November 1, 2004. Deposition samples were collected using two different sampling gauges, a dry gauge and a wet gauge, respectively. To get wet the bottom of wet gauge during the sampling period, the volume of $30{\sim}50ml$ distilled ionized water was added in a wet gauge before the beginning of each deposition sampling. Deposition samples were collected twice a day and analyzed for inorganic water-soluble anions ($Cl^-,\;{NO_3}^-,\;{SO_4}^{2-}$) and cations (${NH_4}^+,\;Na^+,\;K^+,\;Mg^{2+},\;Ca^{2+}$) using ion chromatography. Qualify control and quality assurance of analytical data were checked by the data obtained from reinjection of standard solution, Dionex cross check standard solutions, and random several deposition samples, and measured data was estimated to be reliable. Considering the deposition sample volume, the sampling time, the surface area of sampling container, and the ion concentration measured, the daily deposition amounts for measured ions were calculated in $mg/m^2$. The total daily deposition amounts of all measured ions for dry and wet gauge were $7.5{\pm}2.8$ and $17.7{\pm}4.2mg/m^2$, respectively. A significant increase in deposition amount during rainfall days was observed for both wet gauge and dry gauge, having no difference of deposition amount between in wet gauge and in dry gauge. The mean deposition of all ions measured in this study were higher in wet gauge than in dry gauge because of the surface difference of the sampling container, especially for ${NH_4}^+\;and\;{SO_4}^{2-}$. The mean deposition amounts of ${NH_4}^+\;and\;{SO_4}^{2-}$ in wet gauge were found to be about 10 times and 3 times higher than those in dry gauge, while the rest of the chemical species were equal or a little higher in wet gauge than in dry gauge. Dominant species in dry gauge were ${NO_3}^-\;and\;Ca^{2+}$, accounting for 21% and 28% of the total ion deposition, whereas those in wet gauge were ${SO_4}^{2-}\;and\;{NH_4}^+$, accounting for 19% and 41% of the total ion deposition, respectively.

• Journal of Powder Materials
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• v.23 no.2
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• pp.170-176
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• 2016

Lithium-ion batteries (LIBs) are rapidly improving in capacity and life cycle characteristics to meet the requirements of a wide range of applications, such as portable electronics, electric vehicles, and micro- or nanoelectro-mechanical systems. Recently, atomic layer deposition (ALD), one of the vapor deposition methods, has been explored to expand the capability of LIBs by producing near-atomically flat and uniform coatings on the shell of nanostructured electrodes and membranes for conventional LIBs. In this paper, we introduce various ALD coatings on the anode, cathode, and separator materials to protect them and improve their electrochemical and thermomechanical stability. In addition, we discuss the effects of ALD coatings on the three-dimensional structuring and conduction layer through activation of electrochemical reactions and facilitation of fluent charge collection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.334-339
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• 1998

$Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.7-10
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• 2000

Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.

• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.36-44
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• 1994

The TiN films were deposited on the stainless substrates using arc vapor ion deposition process to in-vestigated the wear resistance. Pin-on-disc tests were performed to measure the volume wear loss of TiN films. The substrate bias voltages and nitrogen flow rates were selected as the deposition parameters of TiN films. It was found that the wear resistance of TiN films was enhanced with increasing bias voltages(0~-300 V) and nitrogen flow rates(220~380 SCCM). The volume wear loss TiN films were about 9.5~2.1$\times$$10^{-3}mm^3$ and 3.5~2.2$\times$$10^{-3}mm^3$ with bias voltages and nitrogen flow rates, respectively.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.163-169
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• 1995

Ion beam assisted deposition(IBAD) technique was used to synthesize hard coatings including diamond-like carbon(DLC), carbon nitride(CN) and metal-ceramic multilayered films. It was found that DLC films formed at low energy ion bombardment possess more $Sp^3$ bonds and much higher hardness. The films exhibited an excellent wear resistance. Nanometer multialyered Fe/TiC films was deposited by ion beam sputtering. The structure and properties were strongly dependent on the thickness of the individual layers and modulation wave length. It was disclosed that both hardness and toughness of the films could be enhanced by adjusting the deposition parameters. The CN films synthesized by IBAD method consisted of tiny crystallites dispersed in amorphous matrix, which were identified by electron diffraction pattern to be $\beta -C_3N_4$.

• Applied Microscopy
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• v.48 no.4
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.117-117
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• 2000

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.