• 제목/요약/키워드: Ion-Implant

검색결과 113건 처리시간 0.028초

Improvement of biohistological response of facial implant materials by tantalum surface treatment

  • Bakri, Mohammed Mousa;Lee, Sung Ho;Lee, Jong Ho
    • Maxillofacial Plastic and Reconstructive Surgery
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    • 제41권
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    • pp.52.1-52.8
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    • 2019
  • Background: A compact passive oxide layer can grow on tantalum (Ta). It has been reported that this oxide layer can facilitate bone ingrowth in vivo though the development of bone-like apatite, which promotes hard and soft tissue adhesion. Thus, Ta surface treatment on facial implant materials may improve the tissue response, which could result in less fibrotic encapsulation and make the implant more stable on the bone surface. The purposes of this study were to verify whether surface treatment of facial implant materials using Ta can improve the biohistobiological response and to determine the possibility of potential clinical applications. Methods: Two different and commonly used implant materials, silicone and expanded polytetrafluoroethylene (ePTFE), were treated via Ta ion implantation using a Ta sputtering gun. Ta-treated samples were compared with untreated samples using in vitro and in vivo evaluations. Osteoblast (MG-63) and fibroblast (NIH3T3) cell viability with the Ta-treated implant material was assessed, and the tissue response was observed by placing the implants over the rat calvarium (n = 48) for two different lengths of time. Foreign body and inflammatory reactions were observed, and soft tissue thickness between the calvarium and the implant as well as the bone response was measured. Results: The treatment of facial implant materials using Ta showed a tendency toward increased fibroblast and osteoblast viability, although this result was not statistically significant. During the in vivo study, both Ta-treated and untreated implants showed similar foreign body reactions. However, the Ta-treated implant materials (silicone and ePTFE) showed a tendency toward better histological features: lower soft tissue thickness between the implant and the underlying calvarium as well as an increase in new bone activity. Conclusion: Ta surface treatment using ion implantation on silicone and ePTFE facial implant materials showed the possibility of reducing soft tissue intervention between the calvarium and the implant to make the implant more stable on the bone surface. Although no statistically significant improvement was observed, Ta treatment revealed a tendency toward an improved biohistological response of silicone and ePTFE facial implants. Conclusively, tantalum treatment is beneficial and has the potential for clinical applications.

Biologic stability of plasma ion-implanted miniscrews

  • Cho, Young-Chae;Cha, Jung-Yul;Hwang, Chung-Ju;Park, Young-Chel;Jung, Han-Sung;Yu, Hyung-Seog
    • 대한치과교정학회지
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    • 제43권3호
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    • pp.120-126
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    • 2013
  • Objective: To gain basic information regarding the biologic stability of plasma ion-implanted miniscrews and their potential clinical applications. Methods: Sixteen plasma ion-implanted and 16 sandblasted and acid-etched (SLA) miniscrews were bilaterally inserted in the mandibles of 4 beagles (2 miniscrews of each type per quadrant). Then, 250 - 300 gm of force from Ni-Ti coil springs was applied for 2 different periods: 12 weeks on one side and 3 weeks contralaterally. Thereafter, the animals were sacrificed and mandibular specimens including the miniscrews were collected. The insertion torque and mobility were compared between the groups. The bone-implant contact and bone volume ratio were calculated within 800 mm of the miniscrews and compared between the loading periods. The number of osteoblasts was also quantified. The measurements were expressed as percentages and analyzed by independent t-tests (p < 0.05). Results: No significant differences in any of the analyzed parameters were noted between the groups. Conclusions: The preliminary findings indicate that plasma ion-implanted miniscrews have similar biologic characteristics to SLA miniscrews in terms of insertion torque, mobility, bone-implant contact rate, and bone volume rate.

치과용 임플란트 나사의 풀림에 미치는 표면코팅 효과 (EFFECTS OF SURFACE COATING ON THE SCREW RELEASE OF DENTAL IMPLANT SCREW)

  • 구철인;정재헌;최한철
    • 대한치과보철학회지
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    • 제42권2호
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    • pp.210-225
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    • 2004
  • Statement of problem: Implant screw loosening has been remained problem in restorative practices. Surface treatment of screw plays a role of preventing screw from loosening in implant screw mechanism. Purpose : The purpose of this study was to investigate surface characteristics of TiN and ZrN film ion plated screw with titanium and gold alloy screw and to evaluate wear resistance, surface roughness, and film adhesion on screw surface using various instruments. Material and methods : GoldTite screws and titanium screws provided by 3i (Implant Innovation, USA) and TorqTite screws or titanium screws by Steri-Oss (Nobel Biocare, USA) and gold screws and titanium screws by AVANA (Osstem Implant, korea) were selected. Ion plating which is much superior to other surface modification techniques was carried out for gold screws and titanium screws using Ti and Zr coating materials with nitrogen gas. Ion nitrided surface of each abutment screw was observed with field emission scanning electron microscopy (FE-SEM, micro-diamond scratch tester, vickers hardness tester, and surface roughness tester. Results : 1) The surface of gold screw and GoldTite is more smooth than ones of other kinds of non coated screw. 2) The ZrN and TiN coated surface is the more smooth than ones of other kinds of screw. 3) The hardness of TiN and ZrN coated surface showed higher than that of non coated surface. 4) The TiN coated titanium screw and ZrN coated gold screw have a good wear resistance and adhesion on the surface. 5) The surface of ZrN coated screw showed low surface roughness compared with the surface of TiN coated screw. Conclusion : It is considered that the TiN and ZrN coated screw which would prevent a screw from loosening can be applicable to implant system and confirmed that TiN and ZrN film act as lubricant on surface of screw due to decrease of friction for recycled tightening and loosening.

Glass strengthening and coloring using PIIID technology

  • Han, Seung-Hee;An, Se-Hoon;Lee, Geun-Hyuk;Jang, Seong-Woo;Whang, Se-Hoon;Yoon, Jung-Hyeon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.178-178
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    • 2016
  • Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

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The histometric analysis of osseointegration in hydroxyapatite surface dental implants by ion beam-assisted deposition

  • Kim, Min-Kyung;Choi, Jung-Yoo;Chae, Gyung-Joon;Jung, Ui-Won;Kim, Sung-Tae;Lee, In-Seop;Cho, Kyoo-Sung;Kim, Chong-Kwan;Choi, Seong-Ho
    • Journal of Periodontal and Implant Science
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    • 제38권sup2호
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    • pp.363-372
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    • 2008
  • Purpose: This study compared the effects of coating implants with hydroxyapatite (HA) using an ion beam-assisted deposition (IBAD) method prepared with machined, anodized, sandblasted and large-grit acid etched (SLA) surfaces in minipigs, and verified the excellency of coating method with HA using IBAD. Material and Methods: 4 male Minipigs(Prestige World Genetics, Korea), 18 to 24 months old and weighing approximately 35 to 40 kg, were chosen. All premolars and first molars of the maxilla were carefully extracted on each side. The implants were placed on the right side after an 8 week healing period. The implant stability was assessed by resonance frequency analysis (RFA) at the time of placement. 40 implants were divided into 5 groups; machined, anodized, anodized plus IBAD, SLA, and SLA plus IBAD surface implants. 4 weeks after implantation on the right side, the same surface implants were placed on the left side. After 4 weeks of healing, the minipigs were sacrificed and the implants were analyzed by RFA, histology and histometric. Results: RFA showed a mean implant stability quotient (ISQ) of $75.625{\pm}5.021$, $76.125{\pm}3.739$ ISQ and $77.941{\pm}2.947$ at placement, after 4 weeks healing and after 8 weeks, respectively. Histological analysis of the implants demonstrated newly formed, compact, mature cortical bone with a nearby marrow spaces. HA coating was not separated from the HA coated implant surfaces using IBAD. In particular, the SLA implants coated with HA using IBAD showed better contact osteogenesis. Statistical and histometric analysis showed no significant differences in the bone to implant contact and bone density among 5 tested surfaces. Conclusion: We can conclude that rough surface implants coated with HA by IBAD are more biocompatible, and clinical, histological, and histometric analysis showed no differences when compared with the other established implant surfaces in normal bone.

마그네슘 이온주입 임플란트의 뒤틀림 제거력에 관한 연구 (Removal Torque of Mg-ion Implanted Clinical Implants with Plasma Source Ion Implantation Method)

  • 김보현;김대곤;박찬진;조리라
    • 구강회복응용과학지
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    • 제25권1호
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    • pp.41-52
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    • 2009
  • 골과 임플란트의 기계적인 결합을 증진시키기 위한 다양한 시도가 이루어졌으며, 최근에는 불소 부식법, 양극산화법, 이온주입법 등 생화학적인 골유착을 유도할 수 있는 임플란트의 표면개질이 관심의 대상이 되고 있다. 본 연구는 플라즈마 상태의 이온을 임플란트 표면에 주입하여 이온 피막을 형성하는 방법(plasma source ion implantion, PSII)으로 표면을 개질한 임플란트에 대한 골반응을 흡수성 재료로 블라스팅 처리(resorbable blasting media, RBM)된 임플란트를 대조군으로 하여 평가하고 이온 주입량을 달리하여 비교한 결과를 알아보고자 하였다. 12마리의 뉴질랜드 가토의 경골에 대조군인 RBM 임플란트와 Mg이온 주입량을 달리한 Mg이온주입 임플란트 3개씩을 식립하고 공진주파수를 측정하였으며 6주 후 48개 임플란트의 뒤틀림 제거력과 공진주파수를 측정하였다. 반복측정이 있는 분산분석을 이용하여 95% 유의수준으로 통계적 유의성을 확인하여 다음과 같은 결과를 얻었다. 1. 각 임플란트간 공진주파수의 차이는 없었으나 군에 관계없이 식립 시에 비해 6주 후의 공진주파수는 증가하였다. 2. 초기 낮은 공진주파수를 나타낸 임플란트군의 공진주파수 증가량이 큰 경향을 나타내었다. 3. 이온잔존량 9.4%인 Mg 1 임플란트가 다른 임플란트 보다 통계적으로 유의하게 큰 뒤틀림제거력을 보였다. 이상의 결과를 종합하여 가장 우수한 골반응을 나타내는 이온주입량을 알 수 있었으며 이러한 이온주입 임플란트가 임상적으로 뛰어난 효능을 보이는 RBM 표면에 비해서도 생물학적 골반응이 더 우수하다는 것을 입증하는 결과라 할 수 있다.

Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Formation by Ion-cut Process

  • Woo, Hyung-Joo;Choi, Han-Woo;Kim, Joon-Kon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.95-100
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    • 2006
  • The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

초미세 접합형성을 위한 극 저 에너지 B, P 및 As 이온주입시 채널링 현상에 관한연구 (A Study on the Channeling Effect of Ultra Low Energy B, P and As Ion Implant to Form Ultra-Shallow Junction of Semiconductor Device)

  • 강정원;황호정
    • 전자공학회논문지D
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    • 제36D권3호
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    • pp.27-33
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    • 1999
  • 본 논문에서는 반도체 소자 제조 기술의 발전을 위하여 극 저 에너지 붕소(B),인(P), 및 비소(As) 이온 주입시 발생되는 채널링 현상이 초미세 접합깊이 형성에 미치는 영향에 관한여 개선된 MDRANGE 시뮬레이션 결과를 통하여 보여주고 있다. 본 연구에서 시뮬레이션된 5keV 이하의 에너지에서 조차도 이온 채널링 현상은 불순물의 농도 분포에 중요한 영향을 미치게 되는 것을 알 수 있었다. 붕소의 경우 500eV 이상의 에너지에서, 인의 경우 2 keV 이상의 에너지에서, 그리고 비소의 경우 대략 4 keV 이상의 에너지에서 채널링 현상이 불순물 분포에 크게 영향을 미치는 것으로 예측되었다. 또한 1 keV 붕소, 2 keV 인, 그리고 5keV 비소 이온 주입 에너지에서 경사도 7°인 경우와 경사도 0°인 경우의 2차원적인 농도분포를 통하여 채널링 현상이 측면 방향보다는 깊이 방향으로 대부분 발생되는 것을 볼 수 있었다.

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국부 셀 격자 결함 모델을 사용한 극 저 에너지 이온 주입에 관한 연구 (A Study on the Ultra-Low Energy Ion Implantation using Local Cell Damage Accumulation Model)

  • 권오근;강정원;황호정
    • 전자공학회논문지D
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    • 제36D권7호
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    • pp.9-16
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    • 1999
  • 본 논문은 극 저 에너지 이온 주입의 원자단위 연구를 위하여 국부 셀 격자결함 축적 모델(local cell damage accumulation model)을 제안하고, 분자 역학 방법(molecular dynamics method)을 사용한 이온 주입 시뮬레이션 결과를 보여주고 있다. 국부 격자 결함 확률 축적 함수는 각 단위 셀에 축적된 에너지, 이온빔 전류, 기판 물질, 주입 이온과 이온 발생 순서 등으로 구성되어 있다. 시뮬레이션 결과는 SIMS 측정치 및 다른 분자 역학 시뮬레이션과 잘 일치한다. 격자결함을 고려하지 않는 MDRANGE는 격자결함으로 인한 채널링 억제 효과가 나타나지 않기 때문에 불순물 분포의 꼬리 부분에서 많은 차이를 보였다. 또한 국부 격자결함 축적 모델을 사용한 경우와 이를 고려하지 않는 경우의 불순물과 격자결함에 관한 2차원 분포를 계산하여 국부적으로 축적된 격자결함이 이온의 진행에 큰 영향을 미치는 것으로 나타났다.

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