• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.279-279
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• 2012

In order to estimate the average migration lengths of $H_3O^+$ ions in amorphous ice, we conducted experiments of reactive ion scattering (RIS), low energy sputtering (LES), and reflection absorption IR spectroscopy (RAIRS) with an ultra-high vacuum (UHV) chamber. Dopped water-ice films were grown on the clean surface of Ru single crystal and analyzed with RIS, LES and RAIRS methods. The population changes of probe molecules, which were buried at a controlled distance from the surface, were monitored by those methods so that we can mesure the migration efficiencies. From the measured efficiencies, we evaluated the average migration lengths. This result is expected to give the information about the dynamics of proton in water-ice film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.268-268
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• 2013

Water molecules on a Ru(0001) surface are anomalously acidic compared to bulk water. The observation was made by conducting reactive ion scattering, reflection absorption infrared spectroscopy, and temperature-programmed desorption measurements for the adsorption of ammonia onto a water layer formed on Ru(0001). The study shows that the water molecules in the first intact $H_2O$ bilayer spontaneously release a proton to NH3 adsorbates to produce $NH_4{^+}$. However, such proton transfer does not occur for $H_2O$, OH, and H in a mixed adsorption layer or for $H_2O$ in a thick ice film surface.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.40-43
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• 2014

We investigated the growth characteristics and interfacial properties of $HfO_2$ films deposited on Ge substrate through atomic layer deposited (ALD) by using an in-situ medium energy ion scattering analysis. The growth kinetics of $HfO_2$ grown on a $GeO_2/Ge$ substrate through ALD is similar to that grown on an $SiO_2/Si$ substrate. However, the incubation period of $HfO_2$ deposition on Ge is shorter than that on Si. The $HfO_2$ grown on the GeO/Ge substrate shows a significant diffusion of Hf atoms into the substrate interface and GeO volatilization after annealing at $700^{\circ}C$. The presence of low-quality Ge oxide or suboxide may degrade the electrical performance of device.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.678-679
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• 2006

The effects of particle size on the surface properties of hydro-thermally synthesized barium titanate powders were investigated by means of particle size analysis, specific surface area, SEM, zeta potential and XPS. Particle sizes were measured by laser light scattering and are in the range of 150 to 1100nm. Zeta potential increased with increasing particle size and it was large minus value in the range of particle size from 500 to 900nm, which seems to be related with the dissolution of $Ba^{2+}$ ion in these particle sizes from the analysis of surface properties by XPS.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.71-71
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• 1998

Transition metal ions, such as Sc, V, Cr and Fe, doped rutile crystals were grown by Floating Zone method. Growth conditions for high quality of crystals depending on the concentration of doped ions were investigated. Grown crystals were cut and polished to thin wafers, and then various types of defects such as homogeneities, low angle grain boundaries, scattering centers, and oxygen vacancies were analyzed. The effects of transition metal ions on defect formation are discussed. Results and discussions on absorption and fluorescence spectra and electrical properties of grown crystals were also reported.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.149-149
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• 2000

Alkali and alkali-earth metal on si(001) surface has been investigated widly for both scientific and technological aspects. In particular, the Ba/Si(001) system has been studied by several groups and they reported many phases such as (2$\times$3), (2$\times$4) and c(6$\times$2) 표 LEED and AES for various temperature and coverages. But there has not been the result of the atomic structure for these phases. Recently some works about the atomic structure of Ba/Si(001) at only room temperature were presented. In this study, we investigated 3-dimensional atomic structure and growth mode of Ba layer on si(001) by coaxial impact collision ion scattering spectroscopy (CAISS) at room temperature and high temperature.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.643-647
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• 2010

O-carboxymethyl water-soluble chitosan (OCMCh) prepared for enhance the application of chitosan was modified with mthoxy polyethyleneglycol (mPEG) by ion-complex for long circulation in the blood. OCMCh-PEG-PLLs was prepared by forming ion-complex with OCMCh-PEG and Poly(L-Lysine) (PLL) for drug and gene delivery system. The physicochemcal characterisitcs of OCMCh-PEG-PLLs were investigated by FT-IR, $^1H$-NMR. These results showed that CMCh-PEG-PLLs were successfully syntehsized by ion-complex. Particle size distribution and zeta potential of the OCMCh-PEG-PLLs were determined using dynamic light scattering technique. Transmission electron microscopy (TEM) was also used to observe the morphology of the OCMCh-PEG-PLLs. OCMCh-PEG-PLLs have spherical shapes with particle size 290∼390 nm. OCMCh-PEG-PLLs were showed when the feeding amount of mPEG ratio was increased, particle size and zeta potential were decreased. Based on these results, it is possible to introduction of the OCMCh-PEG-PLLs into various biomedical fields such as drug and gene delivery system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Radiation Oncology Journal
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• v.17 no.3
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• pp.249-255
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• 1999

Purpose : The purpose of this study is to investigate fundamental aspects of the dose response of fluorescent screen-based electronic portal imaging devices (EPIDS). Materials and Methods : We acquired scanned signal across portal planes as we varied the radiation that entered the EPID by changing the thickness and anatomy of the phantom as well as the air gap between the phantom and the EPID. In addition, we simulated the relative contribution of the scintillation light signal in the EPID system. Results : We have shown that the dose profile across portal planes is a function of the air gap and phantom thickness. We have also found that depending on the density change within the phantom geometry, errors associated with dose response based on the EPID scan can be as high as $7\%$. We also found that scintillation light scattering within the EPID system is an important source of error. Conclusion : This study revealed and demonstrated fundamental characteristics of dose response of EPID, as relative to that of ion chambers. This study showed that EPID based on fluorescent screen cannot be an accurate dosimetry system.

• Membrane Journal
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• v.19 no.2
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• pp.136-144
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• 2009

In this study, sodium dedocyl sulfate (SDS), which was anionic surfactant, was added for forming micelles to remove ferrous ions that could be contained with a small amount in industrial water. Then aggregates were formed by adsorption or binding of ferrous ions on the surface of micelles, and then rejected by ceramic membranes to remove ferrous ions. Ferrous concentration was fixed at 1mM and SDS was changed as $0{\sim}10mM$ to investigate the effect of the anionic surfactant. As a result, rejection rate of ferrous was the highest to 88.97% at 6mM. And we used ELS (Electrophoretic Light Scattering Spectrometer) to investigate particle size distribution of micellar aggregates depending on SDS concentration. Then distribution of large aggregates was the highest at 6mM. And we investigated effects of $N_2$-back-flushing time (BT) during periodic $N_2$-back-flushing on ceramic membranes. Finally optimal $N_2$-BT for NCMT-723l (pore size $0.10{\mu}m$) membrane was 20 sec.