• Journal of Korean Society for Atmospheric Environment
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• v.31 no.6
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• pp.497-507
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• 2015

Real-time and quantitative measurement of the chemical composition in ambient aerosols represents one of the most challenging problems in the field of atmospheric chemistry. In the present study, time resolved application by Aerosol-into-Mist System (AIMS) following by total organic carbon analyzer (TOC) has been developed. The unique aspect of the combination of these two techniques is to provide quantifiable water soluble organic carbon (WSOC) information of particle-phase organic compounds on timescales of minutes. We also demonstrated that the application of the AIMS method is not limited to water-soluble organic carbon but inorganic ion compounds. By correlating the volume concentrations by optical particle sizer (OPS), water soluble organic carbon can be highly related to the secondary organic products. AIMS-TOC method can be potentially applied to probe the formation and evolution mechanism of a variety of SOA behaviors in ambient air.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Journal of Surface Science and Engineering
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• v.41 no.4
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.6-9
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• 2015

Conventional leak detectors are widely based on helium gas sensors. However, the usage of hydrogen sensors in leak detectors has increased because of the high prices of helium leak detectors and the dearth in the supply of helium gas. In this study, a hydrogen leak detector was developed using solid-state hydrogen sensors. The hydrogen sensors are based on Park-Rapp probes with heterojunctions made by oxygen-ion conducting Yttria-stabilized zirconia and proton-conducting In-doped $CaZrO_3$. The hydrogen sensors were used for determining the potential difference between air and air balanced 5 ppm of $H_2$. Even though the Park-Rapp probe shows an excellent selectivity for hydrogen, the sensitivity of the sensor was low because of the low concentration of hydrogen, and the oxygen on the surface of the sensor. In order to increase the sensitivity of the sensor, the sensors were connected in series by Pt wires to increase the potential difference. The sensors were tested at temperatures ranging from $500-600^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.85-87
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• 2000

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrodes in display devices have been investigated. The etch characteristics of ITO as a function of $Ar/CH_4$ gas mixtures were analyzed using QMS(quadrupole mass spectrometry), OES(optical emission spectroscopy), and ESP(electrostatic probe). ITO etch rates were increased with the addition of moderate amount of $CH_4$ to Ar due to the increased chemical reaction between $CH_3$ or H and ITO in addition to the physical sputtering of ITO by Ar ion bombardment. However, the addition of excess amount of $CH_4$ decreased the ITO etch rates possibly due to the increased polymer formation on the ITO surface. Also, the measurement data obtained by QMS and OES suggested that $CH_3$ radicals are more activity involved in the etching of ITO compared to H radicals.

• Corrosion Science and Technology
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• v.11 no.4
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• pp.141-150
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• 2012

Stress corrosion cracks in Alloy 600 compact tension specimens tested at $325^{\circ}C$ in a simulated primary water environment of pressurized water reactor were analyzed by analytical transmission electron microscopy and secondary ion mass spectroscopy (SIMS). From a fine-probe chemical analysis, oxygen was found on the grain boundary just ahead of the crack tip, and chromium oxides were precipitated on the crack tip and the grain boundary attacked by the oxygen diffusion, leaving a Cr/Fe depletion (or Ni enrichment) zone. The oxide layer inside the crack was revealed to consist of a double (inner and outer) layer. Chromium oxides existed in the inner layer, with NiO and (Ni,Cr) spinels in the outer layer. From the nano-SIMS analysis, oxygen was detected at the locations of intergranular chromium carbides ahead of the crack tip, which means that oxygen diffused into the grain boundary and oxidized the surfaces of the chromium carbides. The intergranular chromium carbide blunted the crack tip, thereby suppressing the crack propagation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.488-488
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• 2013

일반적으로 sputtering 방식을 이용한 박막 증착 방법은 장치가 간단하고 고품질의 박막이나 균일한 박막을 만들 수 있는 장점이 있어 널리 사용된다. 본 연구에서는 기존의 sputtering 방식에 Modulation technology를 적용하고자 한다. Modulation technology를 이용하여 전원의 pulse on 시에는 일반적인 sputter 방식으로 기판에 박막을 증착하고 pulse off 시에는 양의 전압을 인가하여 이온빔을 발생시킨 후 기판에 입사시키는 방식을 적용하여 박막 형성의 특성을 향상시키고자한다. 이는 고온의 heater 및 이온빔이나 레이저, 플라즈마 소스 등의 추가적인 에너지원의 장치가 필요 없이 고품질의 박막의 특성을 향상시키는 기대 효과가 있다. Modulated Sputtering System (MSS)에 인가되는 전압과 전류의 특성을 관찰하였으며 MSS에 인가하는 전압과 frequency, 그리고 duty cycle 변화에 따른 이온 에너지 분포를 에너지 분석기를 통해 측정하였다. 또한 Langmuir probe를 이용한 afterglow plasma 상태에서의 이온전류를 측정하였다. 그리고, MSS 이용하여 Ti 박막을 증착하였으며 박막의 특성을 분석하기 위하여 a-step, SEM, XRD, AFM을 이용하여 두께, 결정성장면, 표면 거칠기를 측정하였다. 측정 결과 기판에 입사되는 양이온의 에너지가 증가함에 따라 (002) 결정면 방향에서 (100) 결정면 방향으로 증착되고 표면 거칠기가 낮아짐을 측정하였다. 또한 Graphite 타겟을 이용한 carbon 박막을 증착하였으며 박막의 특성을 분석하기 위하여 Raman을 이용한 분석 결과 양이온의 에너지가 증가함에 따라 박막내의 sp3 함유량이 변화함을 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.425-425
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• 2008

The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

• Korean Journal of Plant Resources
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• v.20 no.6
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• pp.524-529
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• 2007

We carried out to study the function of ArgE in transgenic rice plants, which were confirmed by PCR analysis and hygromycin selection. Transgenic rice plants were with selectable marker gene(HPT) inserted in genome of the rice. Southern analysis with hpt probe confirmed by two restriction enzymes that copy numbers of the selectable gene was introduced into the plant genome. We displayed that the relationship between drought stress and ArgE gene with the overexpressing rice plants. From this result, we observed that the degree of leaves damage has no difference in control and transgenic lines. The total RNAs were extracted from 6 weeks-seedling in normal condition in order to examine their expression levels with ArgE-overexpressed transgenic rice. In particular, expression patterns of genes encoding enzymes involved in abiotic stress, including drought and salt stresses. OsGF14a and OsSalt were investigated by reverse transcription-PCR(RT-PCR). Expression levels of the OsSalt gene decreased significantly in transgenic rice plants compared to control plant. However, ion leakage measurement did not demonstrate any leaves damage change between control and ArgE transgenic plants exposure to mannitol treatment. These results suggest that expression of the ArgE is not involved in tolerance for drought stress in rice but may playa role of signaling networks for salt-induced genes.