• 제목/요약/키워드: Ion milling

검색결과 187건 처리시간 0.032초

디스크 전극을 이용한 미세 전해 밀링 가공에서의 테이퍼 형상 방지 (Taper Reduction in Micro Electrochemical Milling Using Disk-type Electrode)

  • 김보현;이영수;최덕기;주종남
    • 한국정밀공학회지
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    • 제22권4호
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    • pp.167-172
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    • 2005
  • In this paper. micro electrochemical machining (ECM) for micro structure fabrications is presented. By applying ultra short pulses. the chemical reaction can be restricted only to the region very close to the electrode. Micro ECM is applied to machining micro structures through electrochemical milling process becasuse it doesn't suffer from tool wear. Using this method. 3D micro structures were machined on stainless steel. It was found that micro machining is possible with good surface quality in the low concentration electrolyte,0.1 M H₂SO₄. In ECM, as the machining depth increases, better flushing of electrolyte is required for sufficient ion supply. Layer-by-layer milling is advantageous in flushing. However, layer-by-layer milling causes taper of structures. To reduce the taper, application of a disk-type electrode was introduced. By electrochemical milling, various 3D micro structures including a hemisphere with 60 ㎛ diameter were fabricated.

산화물과 금속 복합 분말의 Attrition Milling 및 반응소결: II. 분말의 분쇄특성에 따른 반응소결 거동 (Attrition Milling and Reaction-sintering of the Oxide-Metal Mixed Powders: II. Reaction-sintering Behavior as the Milling Characteristics of Powders)

  • 황규홍;김의훈
    • 한국세라믹학회지
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    • 제31권4호
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    • pp.448-456
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    • 1994
  • The reaction-sintered alumina and zirconia-alumina ceramics were fabricated from the Al/Al2O3 or Zl/ZrO2(Ca-PSZ) powder mixtures via the attrition milling. And the effects of the milling characteristics of used raw powders on reaction sintering were investigated. After attrition milling and isopressing at 400 MPa the Al/Al2O3 specimen was oxidated at 1200℃ for 8 hours followed by sintering at 1550℃ for 3 hours. Because mixed powders of flake-type Al with coarse alumina was much more effectively comminuted than the globular-type Al with coarse alumina powders, it's sintered body of more than 97% theoretical density was achived, but low contents of Al leads to relatively higher shrinkage of about 8%. And because coarse alumina particles was much more beneficial in cutting and reducing the ductile Al particles, using the coarse alumina powder was much more effective in reaction sintering. Fused Ca-PSZ powder was reaction sintered with Al at 1550℃ for 3 hours and low shrinkage ZrO2-Al2O3 composites were fabricated. But because Al/Ca-PSZ powder mixtures were not effectively milled the reaction sintering and densification was difficult. And the Ca ion in Ca-PSZ grains diffused into alumina grains during sintering so that the unstabilization of Ca-PSZ body was occured which gave the microcracks in the specimens.

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Effect of Silicon Content over Fe-Cu-Si/C Based Composite Anode for Lithium Ion Battery

  • Doh, Chil-Hoon;Shin, Hye-Min;Kim, Dong-Hun;Chung, Young-Dong;Moon, Seong-In;Jin, Bong-Soo;Kim, Hyun-Soo;Kim, Ki-Won;Oh, Dae-Hee;Veluchamy, Angathevar
    • Bulletin of the Korean Chemical Society
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    • 제29권2호
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    • pp.309-312
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    • 2008
  • Two different anode composite materials comprising of Fe, Cu and Si prepared using high energy ball milling (HEBM) were explored for their capacity and cycling behaviors. Prepared powder composites in the ratio Cu:Fe:Si = 1:1:2.5 and 1:1:3.5 were characterized through X-Ray diffraction (XRD) and scanning electron microscope (SEM). Nevertheless, the XRD shows absence of any new alloy/compound formation upon ball milling, the elements present in Cu(1)Fe(1)Si(2.5)/Graphite composite along with insito generated Li2O demonstrate a superior anodic behavior and delivers a reversible capacity of 340 mAh/g with a high coulombic efficiency (98%). The higher silicon content Cu(1)Fe(1)Si(3.5) along with graphite could not sustain capacity with cycling possibly due to ineffective buffer action of the anode constituents.

무정형 탄소의 입도분포에 따른 리튬이온이차전지의 탄소부극 특성 (The Effect of Particle Size Distribution of the Nongraphitic Carbon on the Performance of Negative Carbon Electrode in Lithium Ion Secondary Battery)

  • 김현중;이철태
    • 공업화학
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    • 제9권5호
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    • pp.781-785
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    • 1998
  • 무정형탄소인 petroleum cokes를 대상으로 attrition mill을 이용하여 6~48시간 동안 분쇄한 후 이를 $700^{\circ}C$에서 1시간 동안 열처리한 후 재료특성과 전기화학적 특성을 조사하였다. 분쇄에 의한 효과에 의하여 입도분포와 BET 비표면적의 변화가 발생하였으며 내부의 층간거리도 변화시킬 수 있었다. 이들의 재료특성 변화에 의한 cyclic voltammogram과 충 방전 특성과의 관계를 조사한 결과, 분쇄시간 12~24시간에서 분쇄된 후의 경우가 $6{\sim}8{\mu}m$의 평균입도를 가지며 비교적 큰 층간거리와 표면적을 가질 때 전기화학적 특성이 비교적 우수하였다.

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Synthesis and Electrochemical Properties of FexNbS2/C Composites as an Anode Material for Li Secondary Batteries

  • Kim, Yunjung;Kim, Jae-Hun
    • Corrosion Science and Technology
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    • 제21권4호
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    • pp.250-257
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    • 2022
  • Transition metal sulfide materials have emerged as a new anode material for Li secondary batteries owing to their high capacity and rate capability facilitated by fast Li-ion transport through the layered structure. Among these materials, niobium disulfide (NbS2) has attracted much attention with its high electrical conductivity and high theoretical capacity (683 mAh g-1). In this study, we propose a facile synthesis of FexNbS2/C composite via simple ball milling and heat treatment. The starting materials of FeS and Nb were reacted in the first milling step and transformed into an Fe-Nb-S composite. In the second milling step, activated carbon was incorporated and the sulfide was crystallized into FexNbS2 by heat treatment. The prepared materials were characterized by X-ray diffraction, electron spectroscopies, and X-ray photoelectron spectroscopy. The electrochemical test results reveal that the synthesized FexNbS2/C composite electrode demonstrates a high reversible capacity of more than 600 mAh g-1, stable cycling stability, and excellent rate performance for Li-ion battery anodes.

이온빔 기술 리뷰 (A Review of Ion Beam Technology)

  • 이태호
    • 한국군사과학기술학회지
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    • 제14권6호
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    • pp.1107-1113
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    • 2011
  • In this paper, ion beam technology was investigated through the published papers. Ion beam technology is mainly used by the focused ion beams. There are two different types of application methods. One method is to remove the material from the substrate, the other one is to deposit the materials on the surface of the substrate or specimen. Based on the literature review there are 1.5 times more published research papers related to the deposition than those of the removal.

Inductively Coupled Plasma Reactive Ion Etching of MgO Thin Films Using a $CH_4$/Ar Plasma

  • Lee, Hwa-Won;Kim, Eun-Ho;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.77-77
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    • 2011
  • These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

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