• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.5
• /
• pp.471-477
• /
• 2007

SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.752-755
• /
• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.368-368
• /
• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.279-282
• /
• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1104-1108
• /
• 2004

A Study has been made of surface modification of various polymers by ion implantation to change the optical transmittance property at ultraviolet ray (UV, $200\sim400nm$). The substrates were PC (Polycarbonate), PET(Polyethyleneteraphtalate) and PP (Polypropylene). The effects of ion implantation on the change of optical transmittance were investigated in relation to ion species, implantation energies and ion fluences. The N, Ar, Kr, Xe ion implantation performed at ion energies from 20 to 50keV. The fluences ranged from $5\times10^{15}$ to $7\times10^{16}ions/cm^2$. UV/Vis transmittance spectroscopy, FT-IR and XPS were used to investigate optical transmittance, chemical structure and surface chemical state of irradiated polymer. Surface color was changed from the yellow to the dark brown and the transmittance of UV ray in the range UV-A($320\sim400nm$) decreased more than 80% after ion implantation.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1431-1435
• /
• 2018

Using first-principles calculations, we successfully investigate the electrochemical performance of the monoclinic $NaMnO_2$ for the sodium ion batteries. $NaMnO_2$ possesses a voltage window of 3.54-2.52 V and theoretical reversible capacity of $136mAh\;g^{-1}$. Besides, we find that the metallicity of the monoclinic $NaMnO_2$ gradually increases during Na extraction. Moreover, the computational Na migration energy barrier in the monoclinic $NaMnO_2$ is 0.18 eV, ensuring ideal conductivity and reversible capacity. Although the Jahn-Teller distortion effects limit the enhancement of the reversible capacity of the monoclinic $NaMnO_2$, it is still a right cathode material for the sodium ion batteries. The computational results are well in consistent with the experimental investigations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1054-1057
• /
• 2004

The nitrogenated diamond-like carbon (NDLC) exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) films. These diamond-like transparent properties in NDLC come in a material consisting of $sp^2$-bonded carbon versus the $sp^3$-carbon of DLC. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. Liquid crystal (LC) alignment capabilities with ion beam exposure on NDLC thin films and electro-optical (EO) performances of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) with oblique ion beam exposure on the NDLC thin film surface were studied. An excellent uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin films was observed. In addition, it can be achieved that the good EO properties of the ion-beam-aligned TN-LCD. Finally, we will present the residual DC property of the ion-beam-aligned TN-LCD on the NDLC thin film surface.

• Journal of the Korean Ceramic Society
• /
• v.39 no.1
• /
• pp.1-11
• /
• 2002

A bibliographical review of inorganic lithium ion conductors is presented with a focus on those potential candidates for lithium battery application. A wide variety of inorganic lithium ion conductors, both crystalline ceramics and non-crystalline glasses, are considered.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.5
• /
• pp.1331-1335
• /
• 2010

A novel spherical carbon composite material, in which nanosized disordered carbons are dispersed in a soft carbon matrix, has been prepared and investigated for use as a potential anode material for lithium ion batteries. Disordered carbons were synthesized by ball milling natural graphite in air. The composite was prepared by mixing the ball-milled graphite with petroleum pitch powder, pelletizing the mixture, and pyrolyzing the pellets at $1200^{\circ}C$ in an argon flow. The ballmilled graphite consists of distorted nanocrystallites and amorphous phases. In the composite particle, nanosized flakes are uniformly distributed in a soft carbon matrix, as revealed by X-ray diffractometer (XRD) and transmission electron microscopy (TEM) experiments. The composite is compatible with a pure propylene carbonate (PC) electrolyte and shows high rate capability and excellent cycling performance. The electrochemical properties are comparable to those of hard carbon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.88-90
• /
• 2003

The purpose of this study is to research and develop tin oxide-flash composite for lithium Ion polymer battery. Tin oxide is one of the promising material as a electrode active material for lithium Ion polymer battery (LIPB). Tin-based oxides have theoretical volumetric and gravimetric capacities that are four and two times that of carbon, respectively. We investigated cyclic voltammetry and charge/discharge cycling of SnO-flyash/SPE/Li cells. The first discharge capacity of SnO-flyash composite anode was 720 mAh/g. The discharge capacity of SnO-flyash composite anode 412 and 314 mAh/g at cycle 2 and 10 at room temperature, respectively. The SnO-flyash composite anode with PVDF-PMMA-PC-EC-$LiClO_4$ electrolyte showed good capacity with cycling.