• 한국세라믹학회지
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• 제36권9호
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• pp.887-892
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• 1999

The inner crack-like pore with controlled amount of Ca impurity in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implanation photo-lithography Ar ion milling and hot press technique. The crack-like pores in two-hour hot pressed specimen were extremely stable even after heat treating at 1,80$0^{\circ}C$ for 5 hours almost no healing was observed. But the crack-like pores in one-hour hot pressed specimen at 1,30$0^{\circ}C$ were healed by heat treatment and the amount of healing was increased with the heat treatment time and temperature and the amount of Ca addition. The edges of crack-like pore parallel to <1100> direction in (001) basal plane were stable but the edges normal to this direction in (00101) plane <1120> direction were unstable to facetting This means that the surface energy of alumina along the <1100> direction in (0001) basal plane in much lower than <1120> direction.

• 한국세라믹학회지
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• 제20권3호
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• pp.227-235
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• 1983

The dielectric and piezoelectic properties in which $(Zr_{0.52} Ti_{0.48})^{+4}$ ions of $Pb(Zr_{0.52} Ti_{0.48})O_3$ are partially substituted for $W^{+6}$ ions were studied. $ZrTiO_4$ was made by coprecipitation. The specimens of disc shape were sintered respectively at 1180$^{\circ}$to 130$0^{\circ}C$ at an intervals of 2$0^{\circ}C$ for 1 hour. The optimum sintering temperature were found to be between 126$0^{\circ}C$ and 128$0^{\circ}C$. PZT solid solutions sintered had the tetragonal structure with c/a=1.025$\pm$0.005 and theoretical densities incre-ased from 8.02 to 8.17g/cm3 with increasing the amount of the partial substitution of $(Zr_{0.52} Ti_{0.48})^{+4}$ ion for $W^{+6}$ ion The grain size and curie temperature decreased with increasing the amount of $WO_3$ while the dielectric constant increased. When $(Zr_{0.52} Ti_{0.48})^{+4}$ ion was substituted for 1 mole% of $W{+6 ]$ion the planar coupling coefficient$(K_P)$ was as high as 0.58 But as the amount of $WO_3$ increased the mechanical quality factor(Qm) decreased considerably.

• Nuclear Engineering and Technology
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• 제7권2호
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• pp.95-106
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• 1975

3개 태양전지 견본의 전류 전압특성과 효율에 관한 비교 연구를 수행하였다. 견본 하나는 우리 연구실에서 만든 이온주입식의 것이며, 나머지 두개는 외국의 한 메이커가 만든 열확산식의 것이다. 실험에 의하던 각 견본의 접합형성의 특성과 그 효율은 각 p-n 접합의 전류 전압 특성에 크게 의존된다는 것을 알 수 있었다. 이온 주입식 견븐의 불완전한 특성의 원인은 약간 부족한 불순물의 표면농도, 이온 충격과 잡불순물에 의한 격자 결함, 전극에 있어서의 불충분한 Ohm 접촉등의 원인에 기인된다는 것을 본 비교 연구를 통해서 명백히 알 수 있었다. 변환효율에 있어서는 열화산으로 된 두 견본의 것은 각각 14.3%와 9.3%인데 비해서 이온주입으로 된 견본의 것은 4.2%였다.

• 한국재료학회지
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• 제10권7호
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• pp.459-463
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• 2000

순수한 동적 결합반응이고 전하 누적이 없는 이온 임플란테이션, 새로운 재료 개발 등에 음이온을 직접 사용하는 새로운 연구가 진행되고 있으며, 이러한 관점에서 새로운 고체상의 Cs이온 법이 실험실 규모로 연구되고 있다. 본 논문에서는 음이온 Cs gun으로 DLC 박막을 실리콘 위에 제조하였다. 이 시스템은 가스가 필요없으므로, 고 진공에서 증착이 일어난다. C(sup)-빔 에너지는 80~150eV 사이에서 조절이 우수하였다. Raman 분석결과 박막의 DLC 지수, 즉$sp^3$비율은 이온 에너지 증가에 따라 증가하였으며, 미소 경도값 또한 7에서 14GPa로 증가하였다. DLC박막의 표면 평균거칠기(Ra)는 ~1$\AA$정도로 아주 매끈하였으며, 불순물이 내재되지 않는 박막을 얻을 수 있었다.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.68-71
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• 1998

The effect of Mn and Nb additions on the electrical properties of BaTiO$_3$ has been studied by means of equilibrium electrical conductivity as a function of temperature, oxygen partial pressure(Po$_2$) and composition. If the manganese ion is added to the normal Ti site, i.e. BaTi$_{1-x}Mn_xO_{\delta-6}$, the equilibrium conductivity shows strong evidence of acceptor-doped behavior. The conductivity minimum, corresponding to the transition from oxygen excess, p-type behavior to oxygen deficient, n-type behavior with decreasing Po$_2$, is displaced to lower Po$_2$ and is broadened and flattened. The partial replacement of Mn ion with Nb decreases the acceptor-doped effect and the total replacement exhibits a typical donor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped behavior. It was confirmed that unlike undoped or other acceptor-doped samples, for the p-type region, the electrical conductivity follows the 1/6th power dependence of oxygen partial pressure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.24-27
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• 1994

Variations with structural and electrical properties of Yttrium added PZT thin films were observed and measured respectively. Area of rosette was increased by Yttrium added and shapes of hysteresis curves were changed to slim type. $Y^{3+}$ ion substituted $Pb^{2+}$ ion and played the role of doner. Because the creation of space charges was restricted by Yttrium, degradation of remanent polarizations by cumutation of polarization reversals of PZT was protected. But coercive field was increased because of vacancies generated Yttrium added.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.339-343
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• 1999

This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using $SiH_4\; and\; Si_2H_6$ as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using $Si_2H_6$ with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.407-410
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• 1990

Three binary ion-exchange isotherms of zeolite A have been determined using 0.1 M solutions of the aqueous nitrates for the one-step preparation of particular mixed-cation zeolite A compositions. Analyses were done primarily by flame emission spectrometry (FES), together with crystallographic determinations of $Cs^+$ and colorimetric determinations of $NH_{4^+}$. Corrections for a presumed impurity of extra-lattice species in powder sample were made for the determination of $Na^+$. The $Cs^+-Ag^+$ isootherm indicates a strong selectivity for $Ag^+$ through the entire range of zeolite composition. The $Ag^+-Na^+$ isotherm agrees very closely with that reported by Sherry and Walton, and that of $NH_{4^+}-Na^+$ resembles those obtained using zeolite pellets.