• Membrane and Water Treatment
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• v.8 no.3
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• pp.245-257
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• 2017

The separation of nicotine and tobacco-specific N-nitrosamines is a tough problem in tobacco industry. In this study, separation of nicotine from 4-(methylnitrosamino) -1-(3-pyridyl)-1-butanone (NNK) mixtures was investigated using electrodialysis by taking the principle of the protonation status difference between these two components. The results indicated that the solution pH has a dominant impact on the separation process. In a pH range of 5-7, nicotine molecules are existed as mono- and di-protonated ions and can be separated from the uncharged NNK molecules. The acidic electrolyte is conducive to the separation process from the point of flux and energy consumption; while the alkaline electrolyte has negative impact on the separation process. A current density of $10mA/cm^2$ is an appropriate value for the separation process. The lowest energy consumption of the separation process is 0.58 kWh/kg nicotine with the process cost to be estimated at only $0.208 /kg nicotine. Naturally, electrodialysis is a high-efficiency, cost-effective, and environmentally friendly process to separate and purify nicotine from tobacco juice.

• Journal of the Korean Chemical Society
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• v.8 no.2
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• pp.88-91
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• 1964

A rapid and simple method is described here for the determination of scandium in monazite by neutron activation analysis. The sample is irradiated for 20 hours at the neutron flux of $10^{12}$ thermal neutrons/$cm^2$/sec in the TRIGA MARK Ⅱ reactor, after which the sample is decomposed by fusion with concentrated sulfuric acid. The scandium-46 together with scandium carrier are separated from the irradiated sample by precipitating with ammonia, and are extracted by solvent extraction of the thiocyanate complex into ether. The induced radioactivity is measured by gamma scintillation spectrometry using the Multichannel Pulse Height Analyzer connected with 2"${\times}$2" NaI(Tl). The chemical yield is determined gravimetrically by precipitating scandium with mandelic acid. In order to check the efficiency of scandium separation and the errors from interfering activities of the other elements, scandium was separated by the cation exchange resin column, and the results from both samples were compared each other, which showed that the chemical procedure used in this work was as selective as the ion-exchange method with respect to scandium separation. The scandium contents in Korean monazite were found to be about 12 p. p. m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.34-40
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• 1985

Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.348-354
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• 2011

Long-lasting brightness $Sr_{4}Al_{14}O_{25}$ : $Eu^{2+}$, $Dy^{3+}$, $Ag^{+}$ phosphor was synthesized by modified solid state reaction and its photoluminescence was investigated. $Sr(NO_3)_{2}$ and $Al(NO_3)_3{\cdot}9H_{2}O$ as starting materials, and $B_{2}O_{3}$ as a flux were mixed with $Eu_{2}O_{3}$ as an activator, $Dy_{2}O_{3}$ as a coactivator, and $AgNO_{3}$ as a charge compensator. The crystalline of target powder showed a single-phase $Sr_{4}Al_{14}O_{25}$ by the XRD characterization and the average particle size was about 20-30 ${\mu}m$ from the FE-SEM observation. $Ag^{+}$ ion doping effects (0-0.06 mol) on $Sr_{4}Al_{14}O_{25}:Eu^{2+},\;Dy^{3+},\;Ag^{+}$ phosphor were measured by photoluminescence spectrometer and luminescence meter. The of photoluminescence intensity of the $Sr_{3.64}Al_{14}O_{25}:Eu_{0.11},\;Dy_{0.22},\;Ag_{0.03}$ phosphor was higher than other compositions and afterglow brightness was 0.186 $cd/m^{2}$.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.156-157
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• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.6
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• pp.346-361
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• 2013

This article reviews the papers published in the Korean Journal of Air-Conditioning and Refrigeration Engineering during 2012. It is intended to understand the status of current research in the areas of heating, cooling, ventilation, sanitation, and indoor environments of buildings and plant facilities. The conclusions are as follows : (1) The research works on thermal and fluid engineering have been reviewed as groups of fluid machinery, pipes and valves, fuel cells and power plants, ground-coupled heat pumps, and general heat and mass transfer systems. Research issues are mainly focused on new and renewable energy systems, such as fuel cells, ocean thermal energy conversion power plants, and ground-coupled heat pump systems. (2) Research works on the heat transfer area have been reviewed in the categories of heat transfer characteristics, pool boiling and condensing heat transfer, and industrial heat exchangers. Researches on heat transfer characteristics included the results for natural convection in a square enclosure with two hot circular cylinders, non-uniform grooved tube considering tube expansion, single-tube annular baffle system, broadcasting LED light with ion wind generator, mechanical property and microstructure of SA213 P92 boiler pipe steel, and flat plate using multiple tripping wires. In the area of pool boiling and condensing heat transfer, researches on the design of a micro-channel heat exchanger for a heat pump, numerical simulation of a heat pump evaporator considering the pressure drop in the distributor and capillary tubes, critical heat flux on a thermoexcel-E enhanced surface, and the performance of a fin-and-tube condenser with non-uniform air distribution and different tube types were actively carried out. In the area of industrial heat exchangers, researches on a plate heat exchanger type dehumidifier, fin-tube heat exchanger, an electric circuit transient analogy model in a vertical closed loop ground heat exchanger, heat transfer characteristics of a double skin window for plant factory, a regenerative heat exchanger depending on its porous structure, and various types of plate heat exchangers were performed. (3) In the field of refrigeration, various studies were executed to improve refrigeration system performance, and to evaluate the applicability of alternative refrigerants and new components. Various topics were presented in the area of refrigeration cycle. Research issues mainly focused on the enhancement of the system performance. In the alternative refrigerant area, studies on CO2, R32/R152a mixture, and R1234yf were performed. Studies on the design and performance analysis of various compressors and evaporator were executed. (4) In building mechanical system research fields, twenty-nine studies were conducted to achieve effective design of mechanical systems, and also to maximize the energy efficiency of buildings. The topics of the studies included heating and cooling, HVAC system, ventilation, renewable energy systems, and lighting systems in buildings. New designs and performance tests using numerical methods and experiments provide useful information and key data, which can improve the energy efficiency of buildings. (5) In the fields of the architectural environment, studies for various purposes, such as indoor environment, building energy, and renewable energy were performed. In particular, building energy-related researches and renewable energy systems have been mainly studied, reflecting interests in global climate change, and efforts to reduce building energy consumption by government and architectural specialists. In addition, many researches have been conducted regarding indoor environments.

• Journal of the Korean Society for Marine Environment & Energy
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• v.7 no.1
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• pp.13-21
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• 2004

Temporal changes of Chl-α, physical and chemical factors were investigated by diurnal observation at 2-hour interval at three fixed stations in the western Chinhae Bay from 12 Aug. to 13 Aug. 1999. Difference of dissolved oxygen between surface and bottom layer was maximum when the thermocline were strong. Organic distribution such as COD was affected by the growth of phytoplankton. Limitting factor was nitrogen, that is, inorganic nitrogen plays a significant role on regulating the algal growth. Surface distribution of dissolved inorganic nitrogen was very low compared to bottom layer by uptake of organisms. Maximum value of Chl-α at station C2 and C11 were observed from subsurface layer, ranges of which exceeded possibility concentration of red tide outbreak, 10 mg/㎥. On the other hand, that of C15 exist at surface layer. In this area, DIN and DIP concentrations increased by input sources such as rainfall and benthic flux before the bloom of phytoplankton. Accumulation of phytoplankton occurred at subsurface layer by the rapid uptake of DIN, especially nitrate ion, when strong thermocline existed as approach to the afternoon, which led to the increase of organics in water column and oxygen deficiency water mass at bottom layer until late at evening. Since then, DIN increases gradually as water temperature decrease to minimum. The quantitative understanding of nitrogen of fluxed to and from the various sources is necessary for environmental management.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).